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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRF135S203 Infineon Technologies

IRF135S203

MOSFET N-CH 135V 129A TO263-3

Infineon Technologies

759
Datasheet HEXFET®, StrongIRFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 135 V 129A (Tc) 10V 8.4mOhm @ 77A, 10V 4V @ 250µA 270 nC @ 10 V ±20V 9700 pF @ 50 V - 441W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
IPI045N10N3GXKSA1 Infineon Technologies

IPI045N10N3GXKSA1

MOSFET N-CH 100V 100A TO262-3

Infineon Technologies

844
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 4.5mOhm @ 100A, 10V 3.5V @ 150µA 117 nC @ 10 V ±20V 8410 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IAUS165N08S5N029ATMA1 Infineon Technologies

IAUS165N08S5N029ATMA1

MOSFET N-CH 80V 165A HSOG-8

Infineon Technologies

1,665
Datasheet OptiMOS™ 8-PowerSMD, Gull Wing Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 165A (Tc) 6V, 10V 2.9mOhm @ 80A, 10V 3.8V @ 108µA 90 nC @ 10 V ±20V 6370 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HSOG-8-1
IPA60R160P6XKSA1 Infineon Technologies

IPA60R160P6XKSA1

MOSFET N-CH 600V 23.8A TO220-FP

Infineon Technologies

389
Datasheet CoolMOS™ P6 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IRF3805PBF Infineon Technologies

IRF3805PBF

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies

1,658
Datasheet HEXFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 3.3mOhm @ 75A, 10V 4V @ 250µA 290 nC @ 10 V ±20V 7960 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IPB65R190CFD7AATMA1 Infineon Technologies

IPB65R190CFD7AATMA1

MOSFET N-CH 650V 14A TO263-3

Infineon Technologies

962
Datasheet CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) - 190mOhm @ 6.4A, 10V 4.5V @ 320µA 28 nC @ 10 V ±20V 1291 pF @ 400 V - 77W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3
IRFS7730TRLPBF Infineon Technologies

IRFS7730TRLPBF

MOSFET N-CH 75V 195A D2PAK

Infineon Technologies

800
Datasheet HEXFET®, StrongIRFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 6V, 10V 2.6mOhm @ 100A, 10V 3.7V @ 250µA 407 nC @ 10 V ±20V 13660 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AB (D2PAK)
IPW60R180C7XKSA1 Infineon Technologies

IPW60R180C7XKSA1

MOSFET N-CH 600V 13A TO247-3

Infineon Technologies

192
Datasheet CoolMOS™ C7 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 180mOhm @ 5.3A, 10V 4V @ 260µA 24 nC @ 10 V ±20V 1080 pF @ 400 V - 68W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
IPW80R280P7XKSA1 Infineon Technologies

IPW80R280P7XKSA1

MOSFET N-CH 800V 17A TO247-3

Infineon Technologies

252
Datasheet CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 280mOhm @ 7.2A, 10V 3.5V @ 360µA 36 nC @ 10 V ±20V 1200 pF @ 500 V - 101W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-41
IRFP7537PBF Infineon Technologies

IRFP7537PBF

MOSFET N-CH 60V 172A TO247

Infineon Technologies

211
Datasheet HEXFET®, StrongIRFET™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 172A (Tc) 6V, 10V 3.3mOhm @ 100A, 10V 3.7V @ 150µA 210 nC @ 10 V ±20V 7020 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

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