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FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPL65R195C7AUMA1 Infineon Technologies

IPL65R195C7AUMA1

MOSFET N-CH 650V 12A 4VSON

Infineon Technologies

1,137
Datasheet CoolMOS™ C7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 195mOhm @ 2.9A, 10V 4V @ 290µA 23 nC @ 10 V ±20V 1150 pF @ 400 V - 75W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPP019N08NF2SAKMA1 Infineon Technologies

IPP019N08NF2SAKMA1

TRENCH 40<-<100V

Infineon Technologies

896
Datasheet StrongIRFET™ 2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 32A (Ta), 191A (Tc) 6V, 10V 1.9mOhm @ 100A, 10V 3.8V @ 194µA 186 nC @ 10 V ±20V 8700 pF @ 40 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IPB80N06S2L06ATMA2 Infineon Technologies

IPB80N06S2L06ATMA2

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies

891
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 6mOhm @ 69A, 10V 2V @ 180µA 150 nC @ 10 V ±20V 3800 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
IRFB3207PBF Infineon Technologies

IRFB3207PBF

MOSFET N-CH 75V 170A TO220AB

Infineon Technologies

930
Datasheet HEXFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 75 V 170A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7600 pF @ 50 V - 330W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IPB039N10N3GATMA1 Infineon Technologies

IPB039N10N3GATMA1

MOSFET N-CH 100V 160A TO263-7

Infineon Technologies

29,577
Datasheet OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Tc) 6V, 10V 3.9mOhm @ 100A, 10V 3.5V @ 160µA 117 nC @ 10 V ±20V 8410 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7
IRFB3206GPBF Infineon Technologies

IRFB3206GPBF

MOSFET N-CH 60V 120A TO220AB

Infineon Technologies

522
Datasheet HEXFET® TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
SPA11N80C3XKSA2 Infineon Technologies

SPA11N80C3XKSA2

MOSFET N-CH 800V 11A TO220-3

Infineon Technologies

189
Datasheet CoolMOS™ TO-220-3 Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 450mOhm @ 7.1A, 10V 3.9V @ 680µA 85 nC @ 10 V ±20V 1600 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPP65R190CFDXKSA2 Infineon Technologies

IPP65R190CFDXKSA2

MOSFET N-CH 650V 17.5A TO220-3

Infineon Technologies

1,391
Datasheet CoolMOS™ CFD2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPL60R125P7AUMA1 Infineon Technologies

IPL60R125P7AUMA1

MOSFET N-CH 600V 27A 4VSON

Infineon Technologies

5,365
Datasheet CoolMOS™ P7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 27A (Tc) 10V 125mOhm @ 8.2A, 10V 4V @ 410µA 36 nC @ 10 V ±20V 1544 pF @ 400 V - 111W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IRF3808STRLPBF Infineon Technologies

IRF3808STRLPBF

MOSFET N-CH 75V 106A D2PAK

Infineon Technologies

2,847
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 106A (Tc) 10V 7mOhm @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 5310 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

Need Help Narrowing Down the Right FETs, MOSFETs Part?

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