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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPW60R190P6FKSA1 Infineon Technologies

IPW60R190P6FKSA1

MOSFET N-CH 600V 20.2A TO247-3

Infineon Technologies

10
Datasheet CoolMOS™ P6 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 7.6A, 10V 4.5V @ 630µ 11 nC @ 10 V ±20V 1750 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
IPA60R199CPXKSA1 Infineon Technologies

IPA60R199CPXKSA1

MOSFET N-CH 650V 16A TO220-FP

Infineon Technologies

9,386
Datasheet CoolMOS™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 1.1mA 43 nC @ 10 V ±20V 1520 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
IPW65R065C7XKSA1 Infineon Technologies

IPW65R065C7XKSA1

MOSFET N-CH 650V 33A TO247-3

Infineon Technologies

7,494
Datasheet CoolMOS™ C7 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 33A (Tc) 10V 65mOhm @ 17.1A, 10V 4V @ 850µA 64 nC @ 10 V ±20V 3020 pF @ 400 V - 171W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
IMZ120R140M1HXKSA1 Infineon Technologies

IMZ120R140M1HXKSA1

SICFET N-CH 1.2KV 19A TO247-4

Infineon Technologies

22
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 19A (Tc) 15V, 18V 182mOhm @ 6A, 18V 5.7V @ 2.5mA 13 nC @ 18 V +23V, -7V 454 pF @ 800 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-1
IMW65R083M1HXKSA1 Infineon Technologies

IMW65R083M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies

15
Datasheet CoolSiC™ TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 24A (Tc) 18V 111mOhm @ 11.2A, 18V 5.7V @ 3.3mA 19 nC @ 18 V +20V, -2V 624 pF @ 400 V - 104W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-41
IPS70R1K4P7SAKMA1 Infineon Technologies

IPS70R1K4P7SAKMA1

MOSFET N-CH 700V 4A TO251-3

Infineon Technologies

3,749
Datasheet CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 1.4Ohm @ 700mA, 10V 3.5V @ 40µA 4.7 nC @ 10 V ±16V 158 pF @ 400 V - 22.7W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
IPA50R950CEXKSA2 Infineon Technologies

IPA50R950CEXKSA2

MOSFET N-CH 500V 3.7A TO220

Infineon Technologies

2,409
Datasheet CoolMOS™ CE TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 3.7A (Tc) 13V 950mOhm @ 1.2A, 13V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 231 pF @ 100 V - 25.7W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-FP
IPAN70R600P7SXKSA1 Infineon Technologies

IPAN70R600P7SXKSA1

MOSFET N-CH 700V 8.5A TO220

Infineon Technologies

8,288
Datasheet CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 700 V 8.5A (Tc) 10V 600mOhm @ 1.8A, 10V 3.5V @ 90µA 10.5 nC @ 10 V ±16V 364 pF @ 400 V - 24.9W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPAN70R360P7SXKSA1 Infineon Technologies

IPAN70R360P7SXKSA1

MOSFET N-CH 700V 12.5A TO220

Infineon Technologies

6,992
Datasheet CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 700 V 12.5A (Tc) 10V 360mOhm @ 3A, 10V 3.5V @ 150µA 16.4 nC @ 10 V ±16V 517 pF @ 400 V - 26.5W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPA65R650CEXKSA1 Infineon Technologies

IPA65R650CEXKSA1

MOSFET N-CH 650V 7A TO220

Infineon Technologies

5,661
Datasheet CoolMOS™ CE TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 650mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 28W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-FP
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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