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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
ISCH42N04LM7ATMA1 Infineon Technologies

ISCH42N04LM7ATMA1

ISCH42N04LM7ATMA1

Infineon Technologies

5,881
Datasheet OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 61A (Ta), 541A (Tc) 4.5V, 10V 0.42mOhm @ 50A, 10V 1.8V @ 130µA 207 nC @ 10 V ±20V 13000 pF @ 20 V - 3W (Ta), 234W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8
IPL60R199CPAUMA1 Infineon Technologies

IPL60R199CPAUMA1

MOSFET N-CH 600V 16.4A 4VSON

Infineon Technologies

4
Datasheet CoolMOS™ CP 4-PowerTSFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 16.4A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 32 nC @ 10 V ±20V 1520 pF @ 100 V - 139W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IMBG65R260M1HXTMA1 Infineon Technologies

IMBG65R260M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies

5,294
Datasheet CoolSIC™ M1 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 6A (Tc) 18V 346mOhm @ 3.6A, 18V 5.7V @ 1.1mA 6 nC @ 18 V +23V, -5V 201 pF @ 400 V - 65W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-12
IPA105N15N3GXKSA1 Infineon Technologies

IPA105N15N3GXKSA1

MOSFET N-CH 150V 37A TO220-FP

Infineon Technologies

9,619
Datasheet OptiMOS™ TO-220-3 Full Pack Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 150 V 37A (Tc) 8V, 10V 10.5mOhm @ 37A, 10V 4V @ 160µA 55 nC @ 10 V ±20V 4300 pF @ 75 V - 40.5W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-FP
ISC030N12NM6ATMA1 Infineon Technologies

ISC030N12NM6ATMA1

OPTIMOS 6 POWER-TRANSISTOR,120V

Infineon Technologies

14
Datasheet OptiMOS™ 6 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 21A (Ta), 194A (Tc) 8V, 10V 3.04mOhm @ 50A, 10V 3.6V @ 141µA 74 nC @ 10 V ±20V 5500 pF @ 60 V - 3W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-3
IPF019N12NM6ATMA1 Infineon Technologies

IPF019N12NM6ATMA1

TRENCH >=100V

Infineon Technologies

2,021
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IMZA65R040M2HXKSA1 Infineon Technologies

IMZA65R040M2HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

5,430
Datasheet CoolSiC™ Gen 2 TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 46A (Tc) 15V, 20V 36mOhm @ 22.9A, 20V 5.6V @ 4.6mA 28 nC @ 18 V +23V, -7V 997 pF @ 400 V - 172W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-8
IPDQ65R029CFD7AXTMA1 Infineon Technologies

IPDQ65R029CFD7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

5
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 85A (Tc) 10V 29mOhm @ 35.8A, 10V 4.5V @ 1.79mA 139 nC @ 10 V ±20V 7149 pF @ 400 V - 463W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
IPW60R016CM8XKSA1 Infineon Technologies

IPW60R016CM8XKSA1

IPW60R016CM8XKSA1

Infineon Technologies

4,562
Datasheet CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 123A (Tc) 10V 16mOhm @ 62.5A, 10V 4.7V @ 1.48mA 171 nC @ 10 V ±20V 7545 pF @ 400 V - 521W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-U06
IPW60R017C7XKSA1 Infineon Technologies

IPW60R017C7XKSA1

HIGH POWER_NEW

Infineon Technologies

8,912
Datasheet CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 109A (Tc) 10V 17mOhm @ 58.2A, 10V 4V @ 2.91mA 240 nC @ 10 V ±20V 9890 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-41
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

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