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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPTC014N10NM5ATMA1 Infineon Technologies

IPTC014N10NM5ATMA1

OPTIMOS 5 POWER MOSFET

Infineon Technologies

8,273
Datasheet OptiMOS™ 5 16-PowerSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 37A (Ta), 365A (Tc) 6V, 10V 1.4mOhm @ 150A, 10V 3.8V @ 280µA 211 nC @ 10 V ±20V 16000 pF @ 50 V - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HDSOP-16-2
IPW60R070C6FKSA1 Infineon Technologies

IPW60R070C6FKSA1

MOSFET N-CH 600V 53A TO247-3

Infineon Technologies

2,427
Datasheet CoolMOS™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 53A (Tc) 10V 70mOhm @ 25.8A, 10V 3.5V @ 1.72mA 170 nC @ 10 V ±20V 3800 pF @ 100 V - 391W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
IMZA65R020M2HXKSA1 Infineon Technologies

IMZA65R020M2HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

8,459
Datasheet CoolSiC™ Gen 2 TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 83A (Tc) 15V, 20V 18mOhm @ 46.9A, 20V 5.6V @ 9.5mA 57 nC @ 18 V +23V, -7V 2038 pF @ 400 V - 273W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-8
IMBG65R007M2HXTMA1 Infineon Technologies

IMBG65R007M2HXTMA1

SICFET N-CH 650V 238A TO263-7

Infineon Technologies

7,676
Datasheet CoolSiC™ Gen 2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 238A (Tc) 15V, 20V 8.5mOhm @ 146.3A, 18V 5.6V @ 2.97mA 179 nC @ 18 V +23V, -7V 6359 pF @ 400 V - 789W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-12
IMZA65R007M2HXKSA1 Infineon Technologies

IMZA65R007M2HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

8,463
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 210A (Tc) 15V, 20V 6.1mOhm @ 146.3A, 20V 5.6V @ 29.7mA 179 nC @ 18 V +23V, -7V 6359 pF @ 400 V - 625W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-U02
IRFU024NPBFAKLA1 Infineon Technologies

IRFU024NPBFAKLA1

MOSFET N-CH

Infineon Technologies

7,668
Datasheet HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 75mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
IAUCN04S7L005ATMA1 Infineon Technologies

IAUCN04S7L005ATMA1

MOSFET_(20V 40V)

Infineon Technologies

7,891
Datasheet OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 430A (Tj) 4.5V, 10V 0.52mOhm @ 88A, 10V 1.8V @ 95µA 141 nC @ 10 V ±16V 9415 pF @ 20 V - 179W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-43
IPU80R600P7AKMA1 Infineon Technologies

IPU80R600P7AKMA1

MOSFET N-CH 800V 8A TO251-3

Infineon Technologies

3,585
Datasheet CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 600mOhm @ 3.4A, 10V 3.5V @ 170µA 20 nC @ 10 V ±20V 570 pF @ 500 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
IRL3705NPBF Infineon Technologies

IRL3705NPBF

MOSFET N-CH 55V 89A TO220AB

Infineon Technologies

6,830
Datasheet HEXFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 55 V 89A (Tc) 4V, 10V 10mOhm @ 46A, 10V 2V @ 250µA 98 nC @ 5 V ±16V 3600 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
SPP11N60C3XKSA1 Infineon Technologies

SPP11N60C3XKSA1

MOSFET N-CH 650V 11A TO220-3

Infineon Technologies

4
Datasheet CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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