FETs, MOSFETs
Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.
If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GC11N65D5N650V, 11A,RD<360M@10V,VTH2.5V~4 |
4,942 |
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Datasheet | SuperJunction | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±30V | 901 pF @ 50 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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GT025N06AMN60V,170A,RD<2.5M@10V,VTH1.2V~2. |
776 |
|
Datasheet | SGT | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 170A (Tc) | 4.5V, 10V | 2.5mOhm @ 20A, 10V | 2.5V @ 250µA | 70 nC @ 10 V | ±20V | 5119 pF @ 30 V | - | 215W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT011N03MEMOSFET N-CH ESD 30V A TO-263 |
789 |
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Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 209A (Tc) | 4.5V, 10V | 1.6mOhm @ 10A, 10V | 2.5V @ 250µA | 98 nC @ 10 V | ±18V | 6140 pF @ 15 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
|
GC11N65MN650V,RD(MAX)<360M@10V,VTH2.5V~4 |
775 |
|
Datasheet | SuperJunction | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±30V | 768 pF @ 50 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT025N06AD5N60V, 170A, RD<2.2M@10V,VTH1.2V~ |
4,141 |
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Datasheet | SGT | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 20A, 10V | 2.5V @ 250µA | 81 nC @ 10 V | ±20V | 5044 pF @ 30 V | - | 215W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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GT025N06D5N60V,RD(MAX)<2.7M@10V,RD(MAX)<3. |
7,056 |
|
Datasheet | SGT | 8-PowerTDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 170A (Tc) | 4.5V, 10V | 2.5mOhm @ 20A, 10V | 2.5V @ 250µA | 81 nC @ 10 V | ±20V | 5125 pF @ 30 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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GT045N10MN100V, 120A,RD<4.5M@10V,VTH2V~4V |
609 |
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Datasheet | SGT | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 4.5mOhm @ 30A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 4198 pF @ 50 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT045N10D5MOSFET N-CH 100V 120A DFN5*6-8L |
4,517 |
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Datasheet | - | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 5mOhm @ 30A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 4217 pF @ 50 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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G030N06MMOSFET N-CH 60V 223A TO-263 |
770 |
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Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 223A (Tc) | 4.5V, 10V | 3mOhm @ 30A, 10V | 2.5V @ 250µA | 101 nC @ 4.5 V | ±20V | 12432 pF @ 30 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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G080P06MP-60V,-195A,RD(MAX)<7.5M@-10V,VT |
699 |
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Datasheet | TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 10V | 7.5mOhm @ 20A, 10V | 4V @ 250µA | 186 nC @ 10 V | ±20V | 15870 pF @ 30 V | - | 294W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
Frequently Asked Questions
What are FETs, MOSFETs components used for?
FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right FETs, MOSFETs part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
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