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FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GT065P06T Goford Semiconductor

GT065P06T

P-60V,-82A,RD(MAX)<7.5M@-10V,VTH

Goford Semiconductor

212
Datasheet SGT TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 60 V 82A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 2.5V @ 250µA 62 nC @ 10 V ±20V 5335 pF @ 30 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
GT400P10M Goford Semiconductor

GT400P10M

MOSFET P-CH 100V 35A TO-263

Goford Semiconductor

783
Datasheet SGT TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 4.5V, 10V 35mOhm @ 10A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 3073 pF @ 50 V - 106W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
GT1K2P15D5 Goford Semiconductor

GT1K2P15D5

MOSFET P-CH 150V 27A 130W 110M(M

Goford Semiconductor

3,304
Datasheet SGT 8-PowerTDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 150 V 27A (Tc) 10V, 4.5V 110mOhm @ 15A, 10V 3V @ 250µA 80 nC @ 10 V 20V 3213 pF @ 75 V - 138W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
G900P15K Goford Semiconductor

G900P15K

P-150V,-50A,RD(MAX)<80M@-10V,VTH

Goford Semiconductor

820
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 150 V 35A (Tc) 10V 80mOhm @ 5A, 10V 4V @ 250µA 27 nC @ 4.5 V ±20V 3918 pF @ 75 V - 198W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G080N10T Goford Semiconductor

G080N10T

MOSFET N-CH 100V 180A TO-220

Goford Semiconductor

114
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 4.5V, 10V 7.5mOhm @ 30A, 10V 2.5V @ 250µA 107 nC @ 4.5 V ±20V 13912 pF @ 50 V - 370W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
GT080N10K Goford Semiconductor

GT080N10K

N100V, 75A,RD<8M@10V,VTH1V~3V, T

Goford Semiconductor

1,687
Datasheet SGT TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 65A (Tc) 4.5V, 10V 8mOhm @ 50A, 10V 2.5V @ 250µA 43 nC @ 10 V ±20V 2530 pF @ 50 V - 100W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
GT011N03D5E Goford Semiconductor

GT011N03D5E

MOSFET N-CH ESD 30V 209A DFN5*6-

Goford Semiconductor

4,977
Datasheet SGT 8-PowerTDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 209A (Tc) 4.5V, 10V 0.95mOhm @ 10A, 10V 2.5V @ 250µA 98 nC @ 10 V ±20V 5950 pF @ 15 V - 89W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
G900P15D5 Goford Semiconductor

G900P15D5

P-150V,-60A,RD(MAX)<80M@-10V,VTH

Goford Semiconductor

1,574
Datasheet TrenchFET® 8-PowerTDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 150 V 60A (Tc) 10V 80mOhm @ 5A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 4050 pF @ 75 V - 100W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
GT100N12K Goford Semiconductor

GT100N12K

N120V,65A,RD<12M@10V,VTH2.5V~3.5

Goford Semiconductor

2,500
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 65A (Tc) 10V 12mOhm @ 35A, 10V 3.5V @ 250µA 50 nC @ 10 V ±20V 2911 pF @ 60 V - 75W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
GT065P06D5 Goford Semiconductor

GT065P06D5

MOSFET P-CH 60V 103A DFN5*6-8L

Goford Semiconductor

2,579
Datasheet SGT 8-PowerTDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 103A (Tc) 4.5V, 10V 7mOhm @ -20A, -10V 2.5V @ 250µA 62 nC @ 10 V ±20V 5730 pF @ 30 V - 178W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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