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FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GT100N12T Goford Semiconductor

GT100N12T

N120V,RD(MAX)<10M@10V,VTH2.5V~3.

Goford Semiconductor

168
Datasheet SGT TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 70A (Tc) 10V 10mOhm @ 35A, 10V 4V @ 250µA 50 nC @ 10 V ±20V 3050 pF @ 60 V - 100W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
GT1K2P15S Goford Semiconductor

GT1K2P15S

MOSFET P-CH 150V 5A 3W 150M(MAX)

Goford Semiconductor

4,000
Datasheet Trench - Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 150 V 5A (Tc) 10V, 4.5V 150mOhm @ 5A, 10V 3V @ 250µA 86 nC @ 10 V 20V 3275 pF @ 75 V - 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount -
G75P04K Goford Semiconductor

G75P04K

P40V,RD(MAX)<10M@-10V,VTH-1.2V~-

Goford Semiconductor

910
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 6.5mOhm @ 10A, 20V 2.5V @ 250µA 106 nC @ 10 V ±20V 7039 pF @ 20 V - 115W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G65P06K Goford Semiconductor

G65P06K

P60V,RD(MAX)<18M@-10V,VTH-2V~-3.

Goford Semiconductor

3,821
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 65A (Tc) 10V 18mOhm @ 20A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 6557 pF @ 30 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
GT1K2P15M Goford Semiconductor

GT1K2P15M

MOSFET P-CH 150V 27A 138W TO-263

Goford Semiconductor

780
Datasheet SGT TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 150 V 27A (Tc) 4.5V, 10V 120mOhm @ 15A, 10V 3V @ 250µA 86 nC @ 10 V ±20V 3186 pF @ 75 V - 138W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
GC11N65F Goford Semiconductor

GC11N65F

N650V,RD(MAX)<360M@10V,VTH2.5V~4

Goford Semiconductor

133
Datasheet SuperJunction TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 901 pF @ 50 V - 38.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
G110N06K Goford Semiconductor

G110N06K

N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.

Goford Semiconductor

12,202
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 4.5V, 10V 6.4mOhm @ 4A, 10V 2.5V @ 250µA 113 nC @ 10 V ±20V 5538 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G075N06MI Goford Semiconductor

G075N06MI

N60V, 110A,RD<7M@10V,VTH1.0V~4.0

Goford Semiconductor

747
Datasheet TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 10V 7mOhm @ 20A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 6443 pF @ 30 V - 160W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
G75P04M Goford Semiconductor

G75P04M

MOSFET P-CH 40V 80A TO-263

Goford Semiconductor

625
Datasheet TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 6.5mOhm @ -30A, -10V 2.5V @ 250µA 106 nC @ 10 V ±20V 6516 pF @ 20 V - 115W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
GT52N10T Goford Semiconductor

GT52N10T

N100V,RD(MAX)<9M@10V,RD(MAX)<15M

Goford Semiconductor

138
Datasheet SGT TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 4.5V, 10V 9mOhm @ 50A, 10V 3V @ 250µA 35 nC @ 10 V ±20V 2273 pF @ 50 V - 100W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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