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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GT060N04T Goford Semiconductor

GT060N04T

MOSFET, N-CH, 40V,60A,TO-220

Goford Semiconductor

126
Datasheet SGT TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 62A (Tc) 4.5V, 10V 6mOhm @ 30A, 10V 2.3V @ 250µA 25 nC @ 10 V ±20V 1280 pF @ 20 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G300P06D5 Goford Semiconductor

G300P06D5

P-60V,-40A,RD(MAX)<30M@-10V,VTH-

Goford Semiconductor

4,878
Datasheet TrenchFET® 8-PowerTDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 40A (Tc) 10V 30mOhm @ 10A, 10V 3V @ 250µA 49 nC @ 10 V ±20V 2705 pF @ 30 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
G60N04K Goford Semiconductor

G60N04K

N40V,RD(MAX)<7M@10V,RD(MAX)<12M@

Goford Semiconductor

4,867
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 7mOhm @ 30A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 2014 pF @ 20 V - 65W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
60N06 Goford Semiconductor

60N06

N60V,RD(MAX)<17M@10V,RD(MAX)<21M

Goford Semiconductor

2,480
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 17mOhm @ 5A, 10V 2V @ 250µA 50 nC @ 10 V ±20V 2315 pF @ 30 V - 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G26P04K Goford Semiconductor

G26P04K

P-40V,RD(MAX)<18M@-10V,RD(MAX)<2

Goford Semiconductor

2,245
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 40 V 26A (Tc) 4.5V, 10V 18mOhm @ 10A, 10V 2.5V @ 250µA 42 nC @ 10 V ±20V 2849 pF @ 20 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
18N10 Goford Semiconductor

18N10

N100V,RD(MAX)<53M@10V,RD(MAX)<63

Goford Semiconductor

1,931
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 4.5V, 10V 53mOhm @ 10A, 10V 2.5V @ 250µA 26 nC @ 10 V ±20V 2161 pF @ 50 V - 80W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
GT110N06S Goford Semiconductor

GT110N06S

N60V,RD(MAX)<15M@-4.5V,RD(MAX)<1

Goford Semiconductor

3,583
Datasheet SGT 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 4.5V, 10V 11mOhm @ 14A, 10V 2.4V @ 250µA 24 nC @ 10 V ±20V 1300 pF @ 25 V - 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G2K8P15K Goford Semiconductor

G2K8P15K

P-150V,-12A,RD(MAX)<310M@-10V,VT

Goford Semiconductor

2,385
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 150 V 12A (Tc) 10V 310mOhm @ 1A, 10V 3.5V @ 250µA 11 nC @ 10 V ±20V 953 pF @ 75 V - 59W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
GT060N04K Goford Semiconductor

GT060N04K

MOSFET, N-CH, 40V,54A,TO-252

Goford Semiconductor

2,304
Datasheet SGT TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 40 V 62A (Tc) 4.5V, 10V 5.5mOhm @ 30A, 10V 2.3V @ 250µA 25 nC @ 10 V ±20V 1280 pF @ 20 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
18N20J Goford Semiconductor

18N20J

N200V, 18A,RD<0.16@10V,VTH1V~3V,

Goford Semiconductor

130
Datasheet TrenchFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 160mOhm @ 9A, 10V 3V @ 250µA 17.7 nC @ 10 V ±30V 836 pF @ 25 V - 65.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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