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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
G26P04D5 Goford Semiconductor

G26P04D5

P40V,RD(MAX)<18M@-10V,RD(MAX)<22

Goford Semiconductor

4,995
Datasheet TrenchFET® 8-PowerTDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 40 V 26A (Tc) 4.5V, 10V 18mOhm @ 12A, 10V 2.5V @ 250µA 45 nC @ 10 V ±20V 2479 pF @ 20 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
G16P03S Goford Semiconductor

G16P03S

P30V,RD(MAX)<12M@-10V,RD(MAX)<18

Goford Semiconductor

2,234
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 35 nC @ 10 V ±20V 2800 pF @ 15 V - 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G16P03D3 Goford Semiconductor

G16P03D3

P30V,RD(MAX)<12M@-10V,RD(MAX)<18

Goford Semiconductor

9,433
Datasheet TrenchFET® 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 35 nC @ 10 V ±20V 2805 pF @ 15 V - 55W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G50N03D5 Goford Semiconductor

G50N03D5

N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M

Goford Semiconductor

4,998
Datasheet TrenchFET® 8-PowerTDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 4.5mOhm @ 20A, 10V 2.4V @ 250µA 38.4 nC @ 10 V ±20V 1661 pF @ 15 V - 25.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
G48N03D3 Goford Semiconductor

G48N03D3

N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4

Goford Semiconductor

4,925
Datasheet TrenchFET® 8-PowerVDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2.4V @ 250µA 38 nC @ 10 V ±20V 1692 pF @ 15 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G45P02D3 Goford Semiconductor

G45P02D3

P20V,RD(MAX)<9.5M@-4.5V,RD(MAX)<

Goford Semiconductor

4,866
Datasheet TrenchFET® 8-PowerVDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 20 V 45A (Tc) 2.5V, 4.5V 7.5mOhm @ 10A, 4.5V 1V @ 250µA 44 nC @ 4.5 V ±12V 4867 pF @ 10 V - 29W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G30N02T Goford Semiconductor

G30N02T

MOSFET N-CH 20V 30A TO-220

Goford Semiconductor

118
Datasheet TrenchFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 20 V 30A (Tc) 4.5V 13mOhm @ 20A, 4.5V 1.2V @ 250µA 15 nC @ 10 V ±12V 900 pF @ 10 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
GT060N04D5 Goford Semiconductor

GT060N04D5

N40V,120A,RD<2.8M@10V,VTH1.0V~2.

Goford Semiconductor

4,870
Datasheet - 8-PowerTDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 40 V 62A (Tc) 4.5V, 10V 5.5mOhm @ 30A, 10V 2.3V @ 250µA 44 nC @ 10 V ±20V 1276 pF @ 20 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
GT130N10K Goford Semiconductor

GT130N10K

MOSFET N-CH 100V 60A 73.5W TO-2

Goford Semiconductor

2,444
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 12mOhm @ 20A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 1215 pF @ 50 V - 73.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G080N06K Goford Semiconductor

G080N06K

MOSFET N-CH 60V 80A 110W TO-252

Goford Semiconductor

2,384
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 8mOhm @ 20A, 10V 4V @ 250µA 77 nC @ 10 V ±20V 3408 pF @ 30 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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