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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GT180N12K Goford Semiconductor

GT180N12K

MOSFET N-CH 120V 70A 100W 10M(M

Goford Semiconductor

2,500
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 55A (Tc) 10V 17mOhm @ 20A, 10V 4.5V @ 250µA 25 nC @ 10 V ±20V 1650 pF @ 60 V - 96W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G45P40T Goford Semiconductor

G45P40T

MOSFET, P-CH, 40V,45A,TO-220

Goford Semiconductor

2,055
Datasheet TrenchFET® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 40 V 45A (Tc) 4.5V, 10V 16mOhm @ 30A, 10V 2.5V @ 250µA 42 nC @ 10 V ±20V 3269 pF @ 20 V - 80W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G050N03S Goford Semiconductor

G050N03S

N30V, 18A,RD<5M@10V,VTH1.1V~2.4V

Goford Semiconductor

4,000
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Tc) 4.5V, 10V 5mOhm @ 10A, 10V 2.4V @ 250µA 37 nC @ 10 V ±20V 1714 pF @ 15 V - 2.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G18P03S Goford Semiconductor

G18P03S

P-30V,-15A,RD(MAX)<10M@-10V,VTH-

Goford Semiconductor

3,964
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 15A (Tc) 4.5V, 10V 10mOhm @ 10A, 10V 2.5V @ 250µA 58 nC @ 10 V ±20V 3570 pF @ 15 V - 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G13P04S Goford Semiconductor

G13P04S

P-40V,-13A,RD(MAX)<15M@-10V,VTH-

Goford Semiconductor

3,580
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 40 V 13A (Tc) 10V 15mOhm @ 12A, 10V 2.5V @ 250µA 40 nC @ 10 V ±20V 3271 pF @ 20 V - 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G35P04D5 Goford Semiconductor

G35P04D5

P-40V,-35A,RD(MAX)<20M@-4.5V,VTH

Goford Semiconductor

2,497
Datasheet TrenchFET® 8-PowerTDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 40 V 35A (Tc) 4.5V, 10V 14mOhm @ 15A, 10V 2.3V @ 250µA 60 nC @ 10 V ±20V 3224 pF @ 20 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
G12P10K Goford Semiconductor

G12P10K

P100V,RD(MAX)<200M@-10V,RD(MAX)<

Goford Semiconductor

544
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 100 V 12A - 200mOhm @ 6A, 10V 3V @ 250µA 33 nC @ 10 V ±20V 1720 pF @ 50 V - 57W -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
G20P06K Goford Semiconductor

G20P06K

P-60V, -20A,RD<45M@-10V,VTH-2V~-

Goford Semiconductor

213
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 10V 45mOhm @ 12A, 10V 3.5V @ 250µA 46 nC @ 10 V ±20V 3430 pF @ 30 V - 90W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
GT700P08D3 Goford Semiconductor

GT700P08D3

P-80V,-16A,RD(MAX)<75M@-10V,VTH-

Goford Semiconductor

4,787
Datasheet - 8-PowerVDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 80 V 16A (Tc) 10V 75mOhm @ 2A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 1591 pF @ 40 V - 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G2K8P15S Goford Semiconductor

G2K8P15S

P-150V,-2.2A,RD(MAX)<310M@-10V,V

Goford Semiconductor

3,678
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 150 V 2.2A (Tc) 10V 310mOhm @ 500mA, 10V 3.5V @ 250µA 11 nC @ 10 V ±20V 966 pF @ 75 V - 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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