JIEXIN Electronics — Your one-stop global supplier of chips and electronic components.
FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
G3K8N15KE Goford Semiconductor

G3K8N15KE

MOSFET N-CH ESD 150V 6A TO-252

Goford Semiconductor

2,450
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 150 V 6A (Tc) 4.5V, 10V 370mOhm @ 2A, 10V 2.5V @ 250µA 20 nC @ 10 V ±20V 549 pF @ 75 V - 20W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G6P06 Goford Semiconductor

G6P06

P60V,RD(MAX)<96M@-10V,RD(MAX)<14

Goford Semiconductor

11,970
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 3.5A (Tc) 4.5V, 10V 70mOhm @ 4A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 1378 pF @ 30 V - 1.14W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G11S Goford Semiconductor

G11S

P-20V,RD(MAX)<18.4M@-4.5V,RD(MAX

Goford Semiconductor

1,660
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 20 V 11A (Tc) 2.5V, 4.5V 18.4mOhm @ 1A, 4.5V 1.1V @ 250µA 47 nC @ 10 V ±12V 2470 pF @ 10 V - 3.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G2014 Goford Semiconductor

G2014

N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M

Goford Semiconductor

2,940
Datasheet TrenchFET® 6-WDFN Exposed Pad Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 20 V 14A (Tc) 2.5V, 10V 7mOhm @ 5A, 10V 900mV @ 250µA 17.5 nC @ 4.5 V ±12V 1710 pF @ 10 V - 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN (2x2)
GT6K2P10KH Goford Semiconductor

GT6K2P10KH

MOSFET P-CH 100V 4.3A TO-252

Goford Semiconductor

2,310
Datasheet SGT TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 10V 670mOhm @ 1A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 247 pF @ 50 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G35N02K Goford Semiconductor

G35N02K

N20V,RD(MAX)<13M@4.5V,RD(MAX)<18

Goford Semiconductor

1,769
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 2.5V, 4.5V 9mOhm @ 20A, 4.5V 1.2V @ 250µA 24 nC @ 4.5 V ±12V 1380 pF @ 10 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G28N03D3 Goford Semiconductor

G28N03D3

N30V,RD(MAX)<12M@10V,RD(MAX)<18M

Goford Semiconductor

5,000
Datasheet TrenchFET® 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Tc) 4.5V, 10V 12mOhm @ 16A, 10V 2.5V @ 250µA 20 nC @ 10 V ±20V 896 pF @ 15 V - 23W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G170P03D3 Goford Semiconductor

G170P03D3

P-30V, -20A,RD<18M@-10V,VTH-1V~-

Goford Semiconductor

5,000
Datasheet TrenchFET® 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 15mOhm @ 5A, 10V 2.5V @ 250µA 35 nC @ 10 V ±20V 1805 pF @ 15 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G450P04K Goford Semiconductor

G450P04K

MOSFET, P-CH,-40V,-11A,RD(MAX)<4

Goford Semiconductor

2,400
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 40 V 11A (Tc) 4.5V, 10V 40mOhm @ 6A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 983 pF @ 20 V - 48W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G06N10 Goford Semiconductor

G06N10

N100V,RD(MAX)<240M@10V,VTH1.2V~3

Goford Semiconductor

4,602
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 6A (Tc) 4.5V, 10V 240mOhm @ 6A, 10V 3V @ 250µA 6.2 nC @ 10 V ±20V 190 pF @ 50 V - 25W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
Total 638 Record«Prev1... 7891011121314...64Next»
FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

Need Help Narrowing Down the Right FETs, MOSFETs Part?

Send your target specifications, preferred manufacturer, quantity or reference part number. Our team can help check matching options, availability and quotation details for your sourcing requirement.

BOM BOM Phone +86-138 0989 9356 Email info@jx-icsource.com Cart Shopping Cart Account My Account Back To Top