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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
G02P06 Goford Semiconductor

G02P06

P60V,RD(MAX)<190M@-10V,RD(MAX)<2

Goford Semiconductor

2,412
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 1.6A (Tc) 4.5V, 10V 190mOhm @ 1A, 10V 2.5V @ 250µA 11.3 nC @ 10 V ±20V 566 pF @ 30 V - 1.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
GT1003A Goford Semiconductor

GT1003A

N100V, 3A,RD<140M@10V,VTH1.0V~3.

Goford Semiconductor

1,947
Datasheet SGT TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 3A (Tc) 10V 80mOhm @ 3A, 10V 2.5V @ 250µA 5 nC @ 10 V ±20V 209 pF @ 50 V - 1.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
G300N04D3 Goford Semiconductor

G300N04D3

MOSFET N-CH 40V 6A DFN3*3-8L

Goford Semiconductor

4,990
Datasheet TrenchFET® 8-PowerVDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 40 V 6A (Tc) 4.5V, 10V 30mOhm @ 3A, 10V 2.5V @ 250µA 10 nC @ 10 V ±20V 479 pF @ 20 V - 1.25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G800N06H Goford Semiconductor

G800N06H

N60V, 3A,RD<80M@10V,VTH0.7V~1.2V

Goford Semiconductor

2,325
Datasheet TrenchFET® TO-261-4, TO-261AA Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 3A (Tc) 4.5V, 10V 80mOhm @ 3A, 10V 1.2V @ 250µA 6 nC @ 4.5 V ±20V 457 pF @ 30 V - 1.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
5P40 Goford Semiconductor

5P40

P40V,RD(MAX)<85M@-10V,RD(MAX)<12

Goford Semiconductor

9,210
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 5A (Tc) 4.5V, 10V 85mOhm @ 5A, 10V 3V @ 250µA 14 nC @ 10 V ±20V 600 pF @ 20 V - 2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
GT013N04D5 Goford Semiconductor

GT013N04D5

N40V,195A,RD<1.7M@10V,VTH2.0V~4.

Goford Semiconductor

5,000
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.7mOhm @ 30A, 10V 4V @ 250µA 50 nC @ 10 V ±20V 3927 pF @ 20 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
3400L Goford Semiconductor

3400L

N30V,RD(MAX)<27M@10V,RD(MAX)<33M

Goford Semiconductor

3,785
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 5.6A (Tc) 4.5V, 10V 27mOhm @ 2.8A, 10V 1.4V @ 250µA 9.5 nC @ 4.5 V ±12V 820 pF @ 15 V - 1.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
G66 Goford Semiconductor

G66

P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT

Goford Semiconductor

3,000
Datasheet TrenchFET® 6-WDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 16 V 5.8A (Tc) 2.5V, 4.5V 45mOhm @ 4.1A, 4.5V 1V @ 250µA 7.8 nC @ 4.5 V ±12V 740 pF @ 4 V - 1.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN (2x2)
G3401L Goford Semiconductor

G3401L

P30V,RD(MAX)<60M@-10V,RD(MAX)<70

Goford Semiconductor

2,103
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 4.4A (Tc) 2.5V, 4.5V, 10V 55mOhm @ 4A, 10V 1.3V @ 250µA 9.3 nC @ 4.5 V ±12V 652 pF @ 15 V - 1.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
03N06L Goford Semiconductor

03N06L

N60V,RD(MAX)<100M@10V,RD(MAX)<12

Goford Semiconductor

6,330
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 3A (Tc) 4.5V, 10V 80mOhm @ 2A, 10V 1.2V @ 250µA 14.6 nC @ 10 V ±20V 458 pF @ 30 V - 1.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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