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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
G700P06H Goford Semiconductor

G700P06H

P-60V,-5A,RD(MAX)<75M@-10V,VTH-1

Goford Semiconductor

4,784
Datasheet TrenchFET® TO-261-4, TO-261AA Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 5A (Tc) 4.5V, 10V 75mOhm @ 6A, 10V 2.5V @ 250µA 15.8 nC @ 10 V ±20V 1459 pF @ 30 V - 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
G7K2N20HE Goford Semiconductor

G7K2N20HE

N200V, ESD,2A,RD<0.7@10V,VTH1V~2

Goford Semiconductor

2,501
Datasheet TrenchFET® TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 2A (Tc) 4.5V, 10V 700mOhm @ 1A, 10V 2.5V @ 250µA 10.8 nC @ 10 V ±20V 568 pF @ 100 V - 1.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
G3K8N15HE Goford Semiconductor

G3K8N15HE

MOSFET N-CH ESD 150V 2A SOT-223

Goford Semiconductor

2,490
Datasheet TrenchFET® TO-261-4, TO-261AA Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 150 V 2A (Tc) 4.5V, 10V 370mOhm @ 2A, 10V 2.5V @ 250µA 20 nC @ 10 V ±20V 558 pF @ 75 V - 2.16W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
G090P02S Goford Semiconductor

G090P02S

MOSFET P-CH 20V 11A SOP-8

Goford Semiconductor

4,000
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 11A (Tc) 2.5V, 4.5V 9mOhm @ 1A, 4.5V 1.1V @ 250µA 47 nC @ 10 V ±12V 2225 pF @ 10 V - 3.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
GT100N04D3 Goford Semiconductor

GT100N04D3

N40V, 13A,RD<10M@10V,VTH1.0V~2.5

Goford Semiconductor

6,800
Datasheet SGT 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 13A (Tc) 4.5V, 10V 10mOhm @ 5A, 10V 2.5V @ 250µA 32 nC @ 10 V ±20V 642 pF @ 20 V - 23W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
GT095N04D3 Goford Semiconductor

GT095N04D3

MOSFET N-CH 40V 47A DFN3*3-8L

Goford Semiconductor

4,049
Datasheet SGT 8-PowerVDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 40 V 47A (Tc) 4.5V, 10V 6mOhm @ 3A, 10V 2.5V @ 250µA 23 nC @ 10 V ±20V 947 pF @ 20 V - 22.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G33N03S Goford Semiconductor

G33N03S

N30V,RD(MAX)<12M@10V,RD(MAX)<13M

Goford Semiconductor

3,930
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Tc) 4.5V, 10V 12mOhm @ 8A, 10V 1.1V @ 250µA 13 nC @ 15 V ±20V 1550 pF @ 15 V - 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G10N03S Goford Semiconductor

G10N03S

N30V,RD(MAX)<12M@10V,RD(MAX)<16M

Goford Semiconductor

3,500
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Tc) 4.5V, 10V 9mOhm @ 6A, 10V 2.5V @ 250µA 17 nC @ 4.5 V ±20V 832 pF @ 15 V - 2.23W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G7P03S Goford Semiconductor

G7P03S

P30V,RD(MAX)<22M@-10V,RD(MAX)<33

Goford Semiconductor

3,454
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 9A (Tc) 4.5V, 10V 22mOhm @ 3A, 10V 2V @ 250µA 24.5 nC @ 10 V ±20V 1253 pF @ 15 V - 2.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G2012 Goford Semiconductor

G2012

N20V,RD(MAX)<12M@4.5V,RD(MAX)<18

Goford Semiconductor

2,944
Datasheet TrenchFET® 6-WDFN Exposed Pad Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 2.5V, 4.5V 12mOhm @ 5A, 4.5V 1V @ 250µA 29 nC @ 10 V ±10V 1255 pF @ 10 V - 1.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN (2x2)
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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