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FET, MOSFET Arrays

Explore FET, MOSFET Arrays parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
WAB300M12BM3 Wolfspeed, Inc.

WAB300M12BM3

MOSFET 2N-CH 1200V 382A MODULE

Wolfspeed, Inc.

8,403
Datasheet - Module Bulk Last Time Buy Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 382A (Tc) 5.2mOhm @ 300A, 15V 3.6V @ 92mA 908nC @ 15V 24500pF @ 1000V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
MSCSM70AM025CD3AG Microchip Technology

MSCSM70AM025CD3AG

SIC 700V 538A D3

Microchip Technology

4
Datasheet - Module Box Active Silicon Carbide (SiC) - - 700V 538A (Tc) - - - - - - - - Chassis Mount D3
MSQ30C01D Bruckewell

MSQ30C01D

MOSFET 30V 5.3A 8SOIC

Bruckewell

930
Datasheet Trench 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active - - - 30V 5.3A (Ta), 7A (Ta) 28mOhm @ 7A, 10V, 52mOhm @ 5.3A, 10V 2.5V @ 250µA - - - -55°C ~ 150°C (Tc) - - Surface Mount 8-SOIC
QH8JC5TCR Rohm Semiconductor

QH8JC5TCR

MOSFET 2P-CH 60V 3.5A TSMT8

Rohm Semiconductor

6,325
Datasheet - 8-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 60V 3.5A (Ta) 91mOhm @ 3.5A, 10V 2.5V @ 1mA 17.3nC @ 10V 850pF @ 30V 1.1W (Ta) 150°C (TJ) - - Surface Mount TSMT8
SI7212DN-T1-GE3 Vishay Siliconix

SI7212DN-T1-GE3

MOSFET 2N-CH 30V 4.9A PPAK 1212

Vishay Siliconix

4
Datasheet - PowerPAK® 1212-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 4.9A 36mOhm @ 6.8A, 10V 1.6V @ 250µA 11nC @ 4.5V - 1.3W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8 Dual
DMGD7N45SSD-13 Diodes Incorporated

DMGD7N45SSD-13

MOSFET 2N-CH 450V 0.5A 8SO

Diodes Incorporated

7
Datasheet - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 450V 500mA (Ta) 4Ohm @ 400mA, 10V 4.5V @ 1mA 6.9nC @ 10V 256pF @ 25V 1.64W -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-SO
ZXMC6A09DN8TA Diodes Incorporated

ZXMC6A09DN8TA

MOSFET N/P-CH 60V 3.9A/3.7A 8SO

Diodes Incorporated

7
Datasheet - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 60V 3.9A, 3.7A 45mOhm @ 8.2A, 10V 1V @ 250µA (Min) 24.2nC @ 10V 1407pF @ 40V, 1580pF @ 40V 1.8W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
ALD1116SAL Advanced Linear Devices Inc.

ALD1116SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

4,416
Datasheet - 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
M1F45M12W2-1LA STMicroelectronics

M1F45M12W2-1LA

MOSFET 4N-CH 1200V ACEPACK DMT

STMicroelectronics

9,108
Datasheet ECOPACK® 32-PowerDIP Module (1.264", 32.10mm) Tube Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 30A (Tc) 64mOhm @ 20A, 18V 5V @ 1mA 100nC @ 18V 2086pF @ 800V - -40°C ~ 175°C (TJ) - - Through Hole ACEPACK DMT-32
FF4MR12W2M1HB11BPSA1 Infineon Technologies

FF4MR12W2M1HB11BPSA1

MOSFET 2N-CH 1200V 170A MODULE

Infineon Technologies

6,293
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 170A (Tj) 4mOhm @ 200A, 18V 5.15V @ 80mA 594nC @ 18V 17600pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
FS02MR12A8MA2BBPSA1 Infineon Technologies

FS02MR12A8MA2BBPSA1

MOSFET 6N-CH 1200V 390A

Infineon Technologies

2,141
Datasheet HybridPACK™ Module Tray Active Silicon Carbide (SiC) 6 N-Channel Silicon Carbide (SiC) 1200V (1.2kV) 390A (Tj) 1.9mOhm @ 390A, 18V 4.55V @ 160mA 1.19µC @ 18V 34500pF @ 750V - -40°C ~ 175°C (TJ) - - Chassis Mount -
2N7002KDW-AU_R1_000A1 Panjit International Inc.

2N7002KDW-AU_R1_000A1

MOSFET 2N-CH 60V 0.25A SOT363

Panjit International Inc.

5,828
Datasheet - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 250mA (Ta) 3Ohm @ 500mA, 10V 2.5V @ 250µA 0.8nC @ 5V 35pF @ 25V 350mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-363
SSM6N7002BFE,LM Toshiba Semiconductor and Storage

SSM6N7002BFE,LM

MOSFET 2N-CH 60V 0.2A ES6

Toshiba Semiconductor and Storage

4,716
Datasheet - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 200mA 2.1Ohm @ 500mA, 10V 3.1V @ 250µA - 17pF @ 25V 150mW 150°C (TJ) - - Surface Mount ES6
SIL2300A-TP Micro Commercial Co

SIL2300A-TP

MOSFET 2N-CH 20V 7A SOT23-6L

Micro Commercial Co

4,098
Datasheet - SOT-23-6 Tape & Reel (TR) Active - 2 N-Channel (Dual) Common Drain - 20V 7A 18mOhm @ 5A, 4.5V 1V @ 250µA 9.2nC @ 4.5V 900pF @ 10V 1.5W -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
SSM6P69NU,LF Toshiba Semiconductor and Storage

SSM6P69NU,LF

MOSFET 2P-CH 20V 4A 6DFN

Toshiba Semiconductor and Storage

2
Datasheet - 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate, 1.8V Drive 20V 4A (Ta) 45mOhm @ 3.5A, 10V 1.2V @ 1mA 6.74nC @ 4.5V 480pF @ 10V 1W (Ta) 150°C - - Surface Mount 6-µDFN (2x2)
BSS8402DWQ-7 Diodes Incorporated

BSS8402DWQ-7

MOSFET N/P-CH 60V/50V SOT363

Diodes Incorporated

4,342
Datasheet - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 60V, 50V 115mA, 130mA 13.5Ohm @ 500mA, 10V 2.5V @ 250µA - 50pF @ 25V, 45pF @ 25V 200mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
DMC4029SK4-13 Diodes Incorporated

DMC4029SK4-13

MOSFET N/P-CH 40V 8.3A TO252-4L

Diodes Incorporated

7,415
Datasheet - TO-252-5, DPAK (4 Leads + Tab), TO-252AD Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 40V 8.3A 24mOhm @ 6A, 10V 3V @ 250µA 19.1nC @ 20V 1060pF @ 20V 1.5W -55°C ~ 150°C (TJ) - - Surface Mount TO-252-4L
UT6ME5TCR Rohm Semiconductor

UT6ME5TCR

MOSFET N/P-CH 100V 2A HUML2020L8

Rohm Semiconductor

6,048
Datasheet - 6-PowerUDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 100V 2A (Ta), 1A (Ta) 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V 2.5V @ 1mA 2.8nC @ 10V, 6.7nC @ 10V 90pF @ 50V 2W (Ta) 150°C (TJ) - - Surface Mount HUML2020L8
IRLHS6276TRPBF Infineon Technologies

IRLHS6276TRPBF

MOSFET 2N-CH 20V 4.5A PQFN

Infineon Technologies

5,999
Datasheet HEXFET® 6-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 4.5A 45mOhm @ 3.4A, 4.5V 1.1V @ 10µA 3.1nC @ 4.5V 310pF @ 10V 1.5W -55°C ~ 150°C (TJ) - - Surface Mount 6-PQFN Dual (2x2)
TSM250NB06DCR RLG Taiwan Semiconductor Corporation

TSM250NB06DCR RLG

MOSFET 2N-CH 60V 7A 8PDFN

Taiwan Semiconductor Corporation

9,848
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 7A (Ta), 30A (Tc) 25mOhm @ 7A, 10V 4V @ 250µA 22nC @ 10V 1461pF @ 30V 2W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
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FAQ

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FET, MOSFET Arrays components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

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