FET, MOSFET Arrays
Explore FET, MOSFET Arrays parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Configuration | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MSCSM170HRM233AGMOSFET 4N-CH 1700V/1200V 124A |
10 |
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Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1700V (1.7kV), 1200V (1.2kV) | 124A (Tc), 89A (Tc) | 22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V | 3.2V @ 5mA, 2.8V @ 3mA | 356nC @ 20V, 232nC @ 20V | 6600pF @ 1000V, 3020pF @ 1000V | 602W (Tc), 395W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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FF6MR20W2M1HB70BPSA1FF6MR20W2M1HB70BPSA1 |
15 |
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Datasheet | EasyPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 2000V (2kV) | 160A (Tj) | 8.1mOhm @ 160A, 18V | 5.15V @ 112mA | 780nC @ 3V | 24100pF @ 1.2kV | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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F3L6MR20W2M1HB70BPSA1F3L6MR20W2M1HB70BPSA1 |
15 |
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Datasheet | EasyPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel | Silicon Carbide (SiC) | 2000V (2kV) | 155A (Tj) | 8.7mOhm @ 100A, 18V | 5.15V @ 112mA | 297nC @ 18V | 24100pF @ 1.2kV | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120HRM163AGMOSFET 4N-CH 1200V/700V 173A |
10 |
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Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1200V (1.2kV), 700V | 173A (Tc), 124A (Tc) | 16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V | 2.8V @ 6mA, 2.4V @ 4mA | 464nC, 215nC @ 20V | 6040pF @ 1000V, 4500pF @ 700V | 745W (Tc), 365W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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CAB6R0A23GM4MOSFET 2N-CH 2300V 150A |
6 |
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Datasheet | - | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 2300V (2.3kV) | 150A | 8.4mOhm @ 200A, 15V | 4V @ 95mA | 735nC @ 15V | 30500pF @ 1.5kV | 610W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
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FF3MR12KM1HHPSA1MOSFET 2N-CH 1200V 190A AG62MMHB |
19 |
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Datasheet | CoolSiC™ | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 190A (Tc) | 4.44mOhm @ 280A, 18V | 5.1V @ 112mA | 800nC @ 18V | 24200pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-62MMHB |
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FF3MR12KM1HPHPSA1MOSFET 2N-CH 1200V 220A AG62MMHB |
13 |
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Datasheet | CoolSiC™ | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 220A | 4.44mOhm @ 280A, 18V | 5.1V @ 112mA | 800nC @ 18V | 24200pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-62MMHB |
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APTM100A13SCGMOSFET 2N-CH 1000V 65A SP6 |
4 |
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Datasheet | - | SP6 | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 1000V (1kV) | 65A | 156mOhm @ 32.5A, 10V | 5V @ 6mA | 562nC @ 10V | 15200pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
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FF5MR20KM1HHPSA1MOSFET |
9 |
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Datasheet | - | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FF4MR20KM1HPHPSA1MOSFET 2N-CH 2000V AG-62MMHB |
10 |
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Datasheet | C, CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 2000V (2kV) | 280A (Tc) | 5.3mOhm @ 300A, 18V | 5.15V @ 168mA | 1170nC @ 18V | 36100pF @ 1.2kV | - | -40°C ~ 175°C | - | - | Chassis Mount | AG-62MMHB |
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BSM450D12P4G102MOSFET 2N-CH 1200V 447A MODULE |
4 |
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Datasheet | - | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 1200V (1.2kV) | 447A (Tc) | - | 4.8V @ 218.4mA | - | 44000pF @ 10V | 1.45kW (Tc) | 175°C (TJ) | - | - | Chassis Mount | Module |
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HAS175M12BM3MOSFET 2N-CH 1200V 175A |
3 |
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Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 175A | - | - | - | - | - | - | - | - | Chassis Mount | - |
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FF1MR12KM1HHPSA1MOSFET |
12 |
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Datasheet | - | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FF1MR12KM1HPHPSA1MOSFET |
16 |
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Datasheet | - | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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MSCSM170HRM11NGMOSFET 4N-CH 1700V/1200V 226A |
4 |
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Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1700V (1.7kV), 1200V (1.2kV) | 226A (Tc), 163A (Tc) | 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V | 3.2V @ 10mA, 2.8V @ 6mA | 712nC @ 20V, 464nC @ 20V | 13200pF @ 1000V, 6040pF @ 1000V | 1.012kW (Tc), 662W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120AM042T6AGMOSFET 2N-CH 1200V 495A |
4 |
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Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 495A (Tc) | 5.2mOhm @ 240A, 20V | 2.8V @ 18mA | 1392nC @ 20V | 18100pF @ 1000V | 2.031kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120HRM08NGMOSFET 4N-CH 1200V/700V 317A |
8 |
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Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1200V (1.2kV), 700V | 317A (Tc), 227A (Tc) | 7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V | 2.8V @ 12mA, 2.4V @ 8mA | 928nC @ 20V, 430nC @ 20V | 12100pF @ 1000V, 9000pF @ 700V | 1.253kW (Tc), 613W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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NVVR26A120M1WSTMOSFET 2N-CH 1200V AHPM15-CDA |
6 |
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Datasheet | - | 15-PowerDIP Module (2.441", 62.00mm) | Tube | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 400A (Tj) | 2.6mOhm @ 400A, 20V | 3.2V @ 150mA | 1.75µC @ 20V | 31700pF @ 800V | 1kW (Tj) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | AHPM15-CDA |
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ADP46075W3MOSFET 6N-CH 750V 485A ACEPACK |
5 |
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Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 6 N-Channel | - | 750V | 485A (Tj) | 2.05mOhm @ 460A, 18V | 4.4V @ 40mA | 984nC @ 18V | 27050pF @ 400V | 704W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | ACEPACK |
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MSCSM170HRM075NGMOSFET 4N-CH 1700V/1200V 337A |
7 |
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Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1700V (1.7kV), 1200V (1.2kV) | 337A (Tc), 317A (Tc) | 7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V | 3.2V @ 15mA, 2.8V @ 12mA | 1068nC @ 20V, 928nC @ 20V | 19800pF @ 1000V, 12100pF @ 1000V | 1.492kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
Frequently Asked Questions
What are FET, MOSFET Arrays components used for?
FET, MOSFET Arrays components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right FET, MOSFET Arrays part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
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