FET, MOSFET Arrays

Explore FET, MOSFET Arrays parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

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Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
MSCSM70TAM19CT3AG MOSFET 6N-CH 700V 124A SP3F Microchip Technology	1	RFQ	Datasheet	-	Module	Tube	Active	Silicon Carbide (SiC)	6 N-Channel (3-Phase Bridge)	-	700V	124A (Tc)	19mOhm @ 40A, 20V	2.4V @ 4mA	215nC @ 20V	4500pF @ 700V	365W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	SP3F
MSCSM70DUM017AG MOSFET 2N-CH 700V 1021A Microchip Technology	5,247	RFQ	Datasheet	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N-Channel (Dual) Common Source	-	700V	1021A (Tc)	2.1mOhm @ 360A, 20V	2.4V @ 36mA	1935nC @ 20V	40500pF @ 700V	2750W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
BSM600D12P4G103 MOSFET 2N-CH 1200V 567A MODULE Rohm Semiconductor	2,691	RFQ	Datasheet	-	Module	Box	Active	Silicon Carbide (SiC)	2 N-Channel	-	1200V (1.2kV)	567A (Tc)	-	4.8V @ 291.2mA	-	59000pF @ 10V	1.78kW (Tc)	175°C (TJ)	-	-	Chassis Mount	Module
MSCSM170AM058CT6LIAG MOSFET 2N-CH 1700V 353A Microchip Technology	3,712	RFQ	Datasheet	-	Module	Tube	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	-	1700V (1.7kV)	353A (Tc)	7.5mOhm @ 180A, 20V	3.3V @ 15mA	1068nC @ 20V	19800pF @ 1000V	1.642kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
CAB650M17HM3 MOSFET 2N-CH 1700V 916A MODULE Wolfspeed, Inc.	1	RFQ	Datasheet	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N-Channel (Dual)	-	1700V (1.7kV)	916A (Tc)	1.86mOhm @ 650A, 15V	3.6V @ 305mA	2988nC @ 15V	97300pF @ 1200V	-	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	Module
FF2600UXTR33T2M1BPSA1 MOSFET 2N-CH 3300V AG-XHP2K33 Infineon Technologies	8,488	RFQ	Datasheet	CoolSiC™	Module	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	3300V (3.3kV)	720A (Tc)	3.1mOhm @ 750A, 15V	5.55V @ 675mA	3750nC @ 15V	152000pF @ 1.8kV	-	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	AG-XHP2K33
SSM6N68NU,LF MOSFET 2N-CH 30V 4A 6DFN Toshiba Semiconductor and Storage	16	RFQ	Datasheet	-	6-WDFN Exposed Pad	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate, 1.8V Drive	30V	4A (Ta)	84mOhm @ 2A, 4.5V	1V @ 1mA	1.8nC @ 4.5V	129pF @ 15V	2W (Ta)	150°C	-	-	Surface Mount	6-µDFN (2x2)
DMN2016LFG-7 MOSFET 2N-CH 20V 5.2A 8DFN Diodes Incorporated	5,306	RFQ	Datasheet	-	8-PowerUDFN	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Common Drain	Logic Level Gate	20V	5.2A	18mOhm @ 6A, 4.5V	1.1V @ 250µA	16nC @ 4.5V	1472pF @ 10V	770mW	-55°C ~ 150°C (TJ)	-	-	Surface Mount	U-DFN3030-8
ZXMN3A06DN8TA MOSFET 2N-CH 30V 4.9A 8SO Diodes Incorporated	13	RFQ	Datasheet	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	30V	4.9A	35mOhm @ 9A, 10V	1V @ 250µA (Min)	17.5nC @ 10V	796pF @ 25V	1.8W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
BUK9V13-40HX MOSFET 2N-CH 40V 42A LFPAK56D Nexperia USA Inc.	6	RFQ	Datasheet	TrenchMOS™	SOT-1205, 8-LFPAK56	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	Logic Level Gate	40V	42A (Ta)	13.6mOhm @ 10A, 10V	2.2V @ 1mA	19.4nC @ 10V	1160pF @ 25V	46W (Ta)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	LFPAK56D
STS1DNC45 MOSFET 2N-CH 450V 0.4A 8SOIC STMicroelectronics	7,067	RFQ	Datasheet	SuperMESH™	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	450V	400mA	4.5Ohm @ 500mA, 10V	3.7V @ 250µA	10nC @ 10V	160pF @ 25V	1.6W	150°C (TJ)	-	-	Surface Mount	8-SOIC
ALD110900SAL MOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc.	9,418	RFQ	Datasheet	EPAD®, Zero Threshold™	8-SOIC (0.154", 3.90mm Width)	Tube	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Matched Pair	-	10.6V	-	500Ohm @ 4V	20mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	-	-	Surface Mount	8-SOIC
ALD1116PAL MOSFET 2N-CH 10.6V 8PDIP Advanced Linear Devices Inc.	7,888	RFQ	Datasheet	-	8-DIP (0.300", 7.62mm)	Tube	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Matched Pair	-	10.6V	-	500Ohm @ 5V	1V @ 1µA	-	3pF @ 5V	500mW	0°C ~ 70°C (TJ)	-	-	Through Hole	8-PDIP
ALD1117PAL MOSFET 2P-CH 10.6V 8PDIP Advanced Linear Devices Inc.	9,185	RFQ	Datasheet	-	8-DIP (0.300", 7.62mm)	Tube	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual) Matched Pair	-	10.6V	-	1800Ohm @ 5V	1.2V @ 1µA	-	3pF @ 5V	500mW	0°C ~ 70°C (TJ)	-	-	Through Hole	8-PDIP
ALD1102SAL MOSFET 2P-CH 10.6V 8SOIC Advanced Linear Devices Inc.	12	RFQ	Datasheet	-	8-SOIC (0.154", 3.90mm Width)	Tube	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual) Matched Pair	-	10.6V	-	270Ohm @ 5V	1.2V @ 10µA	-	10pF @ 5V	500mW	0°C ~ 70°C (TJ)	-	-	Surface Mount	8-SOIC
ALD210800SCL MOSFET 4N-CH 10.6V 0.08A 16SOIC Advanced Linear Devices Inc.	19	RFQ	Datasheet	EPAD®, Zero Threshold™	16-SOIC (0.154", 3.90mm Width)	Tube	Active	MOSFET (Metal Oxide)	4 N-Channel, Matched Pair	Logic Level Gate	10.6V	80mA	25Ohm	20mV @ 10µA	-	15pF @ 5V	500mW	0°C ~ 70°C (TJ)	-	-	Surface Mount	16-SOIC
ALD1102PAL MOSFET 2P-CH 10.6V 8PDIP Advanced Linear Devices Inc.	22	RFQ	Datasheet	-	8-DIP (0.300", 7.62mm)	Tube	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual) Matched Pair	-	10.6V	-	270Ohm @ 5V	1.2V @ 10µA	-	10pF @ 5V	500mW	0°C ~ 70°C (TJ)	-	-	Through Hole	8-PDIP
ALD110800ASCL MOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc.	23	RFQ	Datasheet	EPAD®, Zero Threshold™	16-SOIC (0.154", 3.90mm Width)	Tube	Active	MOSFET (Metal Oxide)	4 N-Channel, Matched Pair	-	10.6V	-	500Ohm @ 4V	10mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	-	-	Surface Mount	16-SOIC
ALD1101ASAL MOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc.	4,264	RFQ	Datasheet	-	8-SOIC (0.154", 3.90mm Width)	Tube	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Matched Pair	-	10.6V	-	75Ohm @ 5V	1V @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	-	-	Surface Mount	8-SOIC
ALD110800APCL MOSFET 4N-CH 10.6V 16PDIP Advanced Linear Devices Inc.	4	RFQ	Datasheet	EPAD®, Zero Threshold™	16-DIP (0.300", 7.62mm)	Tube	Active	MOSFET (Metal Oxide)	4 N-Channel, Matched Pair	-	10.6V	-	500Ohm @ 4V	10mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	-	-	Through Hole	16-PDIP

FAQ

Frequently Asked Questions

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FET, MOSFET Arrays components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

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