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Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
STPSC20065W STMicroelectronics

STPSC20065W

DIODE SIL CARBIDE 650V 20A DO247

STMicroelectronics

9,781
Datasheet ECOPACK®2 DO-247-2 (Straight Leads) Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.45 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 650 V 1250pF @ 0V, 1MHz - - Through Hole DO-247 -40°C ~ 175°C
DSEI30-10AR IXYS

DSEI30-10AR

DIODE GP 1KV 30A ISOPLUS247

IXYS

4,177
Datasheet - ISOPLUS247™ Tube Active Standard 1000 V 30A 2.4 V @ 36 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 750 µA @ 1000 V - - - Through Hole ISOPLUS247™ (BR) -40°C ~ 150°C
1N6622US Microchip Technology

1N6622US

DIODE GEN PURP 660V 1.2A A-MELF

Microchip Technology

5,542
Datasheet - SQ-MELF, A Bulk Active Standard 660 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 660 V 10pF @ 10V, 1MHz - - Surface Mount A-MELF -65°C ~ 150°C
DSEP60-12AZ-TUB IXYS

DSEP60-12AZ-TUB

DIODE GEN PURP 1.2KV 60A TO268AA

IXYS

15
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active Standard 1200 V 60A 2.66 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 650 µA @ 1200 V 30pF @ 600V, 1MHz - - Surface Mount TO-268AA (D3Pak-HV) -55°C ~ 175°C
SICR20650WT SMC Diode Solutions

SICR20650WT

DIODE SCHOTTKY 650V 10A TO247AD

SMC Diode Solutions

14
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 650 V 650pF @ 0V, 1MHz - - Through Hole TO-247AD -55°C ~ 175°C
KSF30F60B KYOCERA AVX

KSF30F60B

DIODE GEN PURP 600V 30A TO247

KYOCERA AVX

5,179
Datasheet - TO-247-3 Tube Active Standard 600 V 30A 1.7 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 50 µA @ 600 V - - - Through Hole TO-247 -55°C ~ 175°C
1N3892R GeneSiC Semiconductor

1N3892R

DIODE GEN PURP REV 400V 12A DO4

GeneSiC Semiconductor

7,271
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 400 V 12A 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
1N3893R GeneSiC Semiconductor

1N3893R

DIODE GEN PURP REV 600V 12A DO4

GeneSiC Semiconductor

2,816
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 600 V 12A 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
1N3210 GeneSiC Semiconductor

1N3210

DIODE GEN PURP 200V 15A DO203AB

GeneSiC Semiconductor

3
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 200 V 15A 1.5 V @ 15 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Stud Mount DO-203AB (DO-5) -65°C ~ 175°C
1N3214 GeneSiC Semiconductor

1N3214

DIODE GEN PURP 600V 15A DO5

GeneSiC Semiconductor

6,268
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 600 V 15A 1.5 V @ 15 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount DO-5 -65°C ~ 175°C
VS-16FR80M Vishay General Semiconductor - Diodes Division

VS-16FR80M

DIODE GP REV 800V 16A DO203AA

Vishay General Semiconductor - Diodes Division

4,894
Datasheet - DO-203AA, DO-4, Stud Box Active Standard, Reverse Polarity 800 V 16A 1.23 V @ 50 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
C4D15120A Wolfspeed, Inc.

C4D15120A

DIODE SIL CARB 1.2KV 43.5A TO220

Wolfspeed, Inc.

3,666
Datasheet Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 43.5A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1200pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
SICR40650WT SMC Diode Solutions

SICR40650WT

DIODE SCHOTTKY 650V 20A TO247AD

SMC Diode Solutions

12
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 2 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 300 µA @ 650 V 650pF @ 0V, 1MHz - - Through Hole TO-247AD -55°C ~ 175°C
S85J GeneSiC Semiconductor

S85J

DIODE GEN PURP 600V 85A DO5

GeneSiC Semiconductor

9,647
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 600 V 85A 1.1 V @ 85 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 100 V - - - Chassis, Stud Mount DO-5 -65°C ~ 180°C
S85VR GeneSiC Semiconductor

S85VR

DIODE GEN PURP REV 1.4KV 85A DO5

GeneSiC Semiconductor

3,238
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1400 V 85A 1.1 V @ 85 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 100 V - - - Chassis, Stud Mount DO-5 -65°C ~ 150°C
1N6095R GeneSiC Semiconductor

1N6095R

DIODE SCHOTTKY REV 30V 25A DO4

GeneSiC Semiconductor

9,251
Datasheet - DO-203AA, DO-4, Stud Bulk Active Schottky, Reverse Polarity 30 V 25A 580 mV @ 25 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 20 V - - - Chassis, Stud Mount DO-4 -55°C ~ 150°C
JANHCA1N5819 Microchip Technology

JANHCA1N5819

DIODE SCHOTTKY 45V 1A DO41

Microchip Technology

2,541
Datasheet - DO-204AL, DO-41, Axial Bulk Active Schottky 45 V 1A 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V - Military MIL-PRF-19500/586 Through Hole DO-41 -55°C ~ 110°C
MBR8045 GeneSiC Semiconductor

MBR8045

DIODE SCHOTTKY 45V 80A DO5

GeneSiC Semiconductor

6,951
Datasheet - DO-203AB, DO-5, Stud Bulk Active Schottky 45 V 80A 650 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 45 V - - - Chassis, Stud Mount DO-5 -55°C ~ 150°C
183NQ100-1 SMC Diode Solutions

183NQ100-1

DIODE SCHOTTKY 100V 180A PRM1-1

SMC Diode Solutions

2
Datasheet - HALF-PAK Bulk Active Schottky 100 V 180A 950 mV @ 180 A Fast Recovery =< 500ns, > 200mA (Io) - 4.5 mA @ 100 V 4150pF @ 5V, 1MHz - - Chassis Mount PRM1-1 (Half Pak Module) -55°C ~ 175°C
241NQ045-1 SMC Diode Solutions

241NQ045-1

DIODE SCHOTTKY 45V 240A PRM1-1

SMC Diode Solutions

9,133
Datasheet - HALF-PAK Bulk Active Schottky 45 V 240A 690 mV @ 240 A Fast Recovery =< 500ns, > 200mA (Io) - 20 mA @ 45 V 10300pF @ 5V, 1MHz - - Chassis Mount PRM1-1 (Half Pak Module) -55°C ~ 175°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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