Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
STTH15RQ06D DIODE GEN PURP 600V 15A TO220AC STMicroelectronics	8,287	RFQ	Datasheet	ECOPACK®	TO-220-2	Tube	Active	Standard	600 V	15A	2.95 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	20 µA @ 600 V	-	-	-	Through Hole	TO-220AC	175°C (Max)
VS-E5PH7506LHN3 DIODE GEN PURP 600V 75A TO247AD Vishay General Semiconductor - Diodes Division	5,346	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	75A	1.7 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	57 ns	25 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
VS-E5PX7506LHN3 DIODE GEN PURP 600V 75A TO247AD Vishay General Semiconductor - Diodes Division	7,868	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	75A	2.2 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	48 ns	25 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
VS-45EPF06LHM3 DIODE GEN PURP 600V 45A TO247AD Vishay General Semiconductor - Diodes Division	5,302	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	45A	1.31 V @ 45 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-40°C ~ 150°C
VS-65APS12LHM3 DIODE GEN PURP 1.2KV 65A TO247AD Vishay General Semiconductor - Diodes Division	8,905	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Active	Standard	1200 V	65A	1.12 V @ 65 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-40°C ~ 150°C
VS-12FR20 DIODE GEN PURP 200V 12A DO203AA Vishay General Semiconductor - Diodes Division	2,623	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	200 V	12A	1.26 V @ 38 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 200 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
TRS8E65F,S1Q DIODE SIL CARB 650V 8A TO220-2L Toshiba Semiconductor and Storage	8,401	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.6 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	28pF @ 650V, 1MHz	-	-	Through Hole	TO-220-2L	175°C (Max)
STTH810GY-TR DIODE GEN PURP 1KV 8A D2PAK STMicroelectronics	8,134	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	1000 V	8A	2 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	5 µA @ 1000 V	-	Automotive	AEC-Q101	Surface Mount	D2PAK	-40°C ~ 175°C
VS-45EPF12LHM3 DIODE GEN PURP 1.2KV 45A TO247AD Vishay General Semiconductor - Diodes Division	5,470	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	45A	1.44 V @ 45 A	Fast Recovery =< 500ns, > 200mA (Io)	450 ns	100 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-40°C ~ 150°C
VS-30APF10-M3 DIODE GEN PURP 1KV 30A TO247AC Vishay General Semiconductor - Diodes Division	8,946	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	1000 V	30A	1.41 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	450 ns	100 µA @ 1000 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
STTH15R06FP DIODE GP 600V 15A TO220FPAC STMicroelectronics	2,320	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	15A	2.9 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	60 µA @ 600 V	-	-	-	Through Hole	TO-220FPAC	175°C (Max)
VS-40EPS16-M3 DIODE GP 1.6KV 40A TO247AC Vishay General Semiconductor - Diodes Division	6,765	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1600 V	40A	1.14 V @ 40 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1600 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
VS-65APS16LHM3 DIODE GEN PURP 1.6KV 65A TO247AD Vishay General Semiconductor - Diodes Division	8,866	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Active	Standard	1600 V	65A	1.17 V @ 65 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-40°C ~ 150°C
VS-HFA06PB120-N3 DIODE GP 1.2KV 6A TO247AC Vishay General Semiconductor - Diodes Division	6,033	RFQ	Datasheet	HEXFRED®	TO-247-2	Tube	Active	Standard	1200 V	6A	3 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	5 µA @ 1200 V	-	-	-	Through Hole	TO-247AC Modified	-55°C ~ 150°C
DSA1-12D DIODE AVALANCHE 1.2KV 2.3A IXYS	9,568	RFQ	Datasheet	-	Radial	Box	Active	Avalanche	1200 V	2.3A	1.34 V @ 7 A	Standard Recovery >500ns, > 200mA (Io)	-	700 µA @ 1200 V	-	-	-	Through Hole	-	-40°C ~ 150°C
TRS10E65F,S1Q DIODE SIL CARB 650V 10A TO220-2L Toshiba Semiconductor and Storage	3,742	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	36pF @ 650V, 1MHz	-	-	Through Hole	TO-220-2L	175°C (Max)
TRS10A65F,S1Q DIODE SIL CARB 650V 10A TO220F Toshiba Semiconductor and Storage	4,007	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	36pF @ 650V, 1MHz	-	-	Through Hole	TO-220F-2L	175°C (Max)
IDWD10G120C5XKSA1 DIODE SIL CARB 1.2KV 34A TO247-2 Infineon Technologies	6,810	RFQ	Datasheet	CoolSiC™+	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	34A	1.65 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 1200 V	730pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-2	-55°C ~ 175°C
TRS4A65F,S1Q DIODE SIL CARBIDE 650V 4A TO220F Toshiba Semiconductor and Storage	4,029	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.6 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	16pF @ 650V, 1MHz	-	-	Through Hole	TO-220F-2L	175°C (Max)
TRS12E65F,S1Q DIODE SIL CARB 650V 12A TO220-2L Toshiba Semiconductor and Storage	5,715	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	65pF @ 650V, 1MHz	-	-	Through Hole	TO-220-2L	175°C (Max)

FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.