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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
TRS2E65F,S1Q Toshiba Semiconductor and Storage

TRS2E65F,S1Q

DIODE SIL CARB 650V 2A TO220-2L

Toshiba Semiconductor and Storage

23
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 2A 1.6 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 8.7pF @ 650V, 1MHz - - Through Hole TO-220-2L 175°C (Max)
BYW29-100-E3/45 Vishay General Semiconductor - Diodes Division

BYW29-100-E3/45

DIODE GEN PURP 100V 8A TO220AC

Vishay General Semiconductor - Diodes Division

6,024
Datasheet - TO-220-2 Tube Active Standard 100 V 8A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 10 µA @ 100 V 45pF @ 4V, 1MHz - - Through Hole TO-220AC -65°C ~ 150°C
SDUR30Q60W SMC Diode Solutions

SDUR30Q60W

DIODE GEN PURP 600V 30A TO247AC

SMC Diode Solutions

11
Datasheet - TO-247-2 Tube Active Standard 600 V 30A 1.8 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 10 µA @ 600 V - - - Through Hole TO-247AC -55°C ~ 150°C
RFV12TJ6SGC9 Rohm Semiconductor

RFV12TJ6SGC9

DIODE GP 600V 12A TO220ACFP

Rohm Semiconductor

8,057
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 12A 2.8 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 10 µA @ 600 V - - - Through Hole TO-220ACFP 150°C
VI30100S-E3/4W Vishay General Semiconductor - Diodes Division

VI30100S-E3/4W

DIODE SCHOTTKY 100V 30A TO262AA

Vishay General Semiconductor - Diodes Division

4,214
Datasheet TMBS® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active Schottky 100 V 30A 910 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 100 V - - - Through Hole TO-262AA -40°C ~ 150°C
DTH3006PT Diodes Incorporated

DTH3006PT

DIODE GEN PURP 600V 30A TO247-2

Diodes Incorporated

2,900
Datasheet - TO-247-2 Tube Active Standard 600 V 30A 2.4 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 100 µA @ 600 V 155pF @ 4V, 1MHz - - Through Hole TO-247-2 (Type HE) -55°C ~ 175°C
VS-8ETH06FP-N3 Vishay General Semiconductor - Diodes Division

VS-8ETH06FP-N3

DIODE GP 600V 8A TO220-2FP

Vishay General Semiconductor - Diodes Division

7,858
Datasheet FRED Pt® TO-220-2 Full Pack Tube Active Standard 600 V 8A 2.4 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 50 µA @ 600 V - - - Through Hole TO-220-2 Full Pack -65°C ~ 175°C
VS-C4PU3006L-N3 Vishay General Semiconductor - Diodes Division

VS-C4PU3006L-N3

DIODE GEN PURP 600V 15A TO247AD

Vishay General Semiconductor - Diodes Division

4,591
Datasheet FRED Pt® TO-247-3 Tube Active Standard 600 V 15A 1.55 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 15 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
DSEI12-10A IXYS

DSEI12-10A

DIODE GEN PURP 1KV 12A TO220AC

IXYS

5,381
Datasheet - TO-220-2 Tube Active Standard 1000 V 12A 2.7 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 250 µA @ 1000 V - - - Through Hole TO-220AC -40°C ~ 150°C
C6D08065A Wolfspeed, Inc.

C6D08065A

DIODE SIL CARB 650V 30A TO220-2

Wolfspeed, Inc.

3,134
Datasheet Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 30A 1.5 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 518pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
JANTX1N5616 Microchip Technology

JANTX1N5616

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

5,526
Datasheet - A, Axial Bulk Active Standard 400 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 400 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JANTX1N5619 Microchip Technology

JANTX1N5619

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

8,229
Datasheet - A, Axial Bulk Active Standard 600 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 500 nA @ 600 V - Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
VS-1N1202A Vishay General Semiconductor - Diodes Division

VS-1N1202A

DIODE GEN PURP 200V 12A DO203AA

Vishay General Semiconductor - Diodes Division

6,566
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 200 V 12A 1.35 V @ 12 A Standard Recovery >500ns, > 200mA (Io) - 2 mA @ 200 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 200°C
VS-12F10 Vishay General Semiconductor - Diodes Division

VS-12F10

DIODE GEN PURP 100V 12A DO203AA

Vishay General Semiconductor - Diodes Division

6,146
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 100 V 12A 1.26 V @ 38 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 100 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
VS-70HF10 Vishay General Semiconductor - Diodes Division

VS-70HF10

DIODE GEN PURP 100V 70A DO203AB

Vishay General Semiconductor - Diodes Division

4
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 100 V 70A 1.35 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - 15 mA @ 100 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
1N1200A GeneSiC Semiconductor

1N1200A

DIODE GEN PURP 100V 12A DO4

GeneSiC Semiconductor

9,031
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 100 V 12A 1.1 V @ 12 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount DO-4 -65°C ~ 200°C
STPSC10H12D STMicroelectronics

STPSC10H12D

DIODE SIL CARB 1.2KV 10A TO220AC

STMicroelectronics

8,720
Datasheet ECOPACK®2 TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1200 V 725pF @ 0V, 1MHz - - Through Hole TO-220AC -40°C ~ 175°C
SICRF101200 SMC Diode Solutions

SICRF101200

DIODE SIC 1.2KV 10A ITO220AC

SMC Diode Solutions

6,506
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 640pF @ 0V, 1MHz - - Through Hole ITO-220AC -55°C ~ 175°C
VS-12F100 Vishay General Semiconductor - Diodes Division

VS-12F100

DIODE GEN PURP 1KV 12A DO203AA

Vishay General Semiconductor - Diodes Division

4,368
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 1000 V 12A 1.26 V @ 38 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 1000 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
VS-40HFR10 Vishay General Semiconductor - Diodes Division

VS-40HFR10

DIODE GEN PURP 100V 40A DO203AB

Vishay General Semiconductor - Diodes Division

8,326
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 100 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 100 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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