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Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JANTX1N5552 Microchip Technology

JANTX1N5552

DIODE GEN PURP 600V 5A AXIAL

Microchip Technology

8,662
Datasheet - B, Axial Bulk Active Standard 600 V 5A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 600 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JANTX1N5622 Microchip Technology

JANTX1N5622

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology

4,981
Datasheet - A, Axial Bulk Active Standard 1000 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1000 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
1N5619US Microchip Technology

1N5619US

DIODE GEN PURP 600V 1A D-5A

Microchip Technology

4,921
Datasheet - SQ-MELF, A Bulk Active Standard 600 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 500 nA @ 600 V 25pF @ 12V, 1MHz - - Surface Mount D-5A -65°C ~ 175°C
VS-80PFR80 Vishay General Semiconductor - Diodes Division

VS-80PFR80

DIODE GP REV 800V 80A DO203AB

Vishay General Semiconductor - Diodes Division

23
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 800 V 80A 1.4 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
1N5811 Microchip Technology

1N5811

DIODE GEN PURP 150V 3A B AXIAL

Microchip Technology

9
Datasheet - B, Axial Bulk Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz - - Through Hole B, Axial -65°C ~ 175°C
JANTX1N5806US Microchip Technology

JANTX1N5806US

DIODE GEN PURP 150V 1A D-5A

Microchip Technology

7,663
Datasheet - SQ-MELF, A Bulk Active Standard 150 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
1N5811US/TR Microchip Technology

1N5811US/TR

DIODE GEN PURP 150V 3A B SQ-MELF

Microchip Technology

2
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 175°C
MSC030SDA070S Microchip Technology

MSC030SDA070S

DIODE SIL CARBIDE 700V 60A D3PAK

Microchip Technology

24
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active SiC (Silicon Carbide) Schottky 700 V 60A 1.8 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 700 V - - - Surface Mount D3PAK -55°C ~ 175°C
IDWD15G120C5XKSA1 Infineon Technologies

IDWD15G120C5XKSA1

DIODE SIL CARB 1.2KV 49A TO247-2

Infineon Technologies

18
Datasheet CoolSiC™+ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 49A 1.65 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 124 µA @ 1200 V 1050pF @ 1V, 1MHz - - Through Hole PG-TO247-2 -55°C ~ 175°C
JANTX1N5420 Microchip Technology

JANTX1N5420

DIODE GEN PURP 600V 3A B AXIAL

Microchip Technology

5,551
Datasheet - B, Axial Bulk Active Standard 600 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 1 µA @ 600 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5806US Microchip Technology

JANTXV1N5806US

DIODE GEN PURP 150V 1A D-5A

Microchip Technology

18
Datasheet - SQ-MELF, A Bulk Active Standard 150 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
VS-85HF20 Vishay General Semiconductor - Diodes Division

VS-85HF20

DIODE GEN PURP 200V 85A DO203AB

Vishay General Semiconductor - Diodes Division

4
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 200 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 200 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 150°C
1N1186A GeneSiC Semiconductor

1N1186A

DIODE GEN PURP 200V 40A DO5

GeneSiC Semiconductor

2,768
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 200 V 40A 1.1 V @ 40 A - - 10 µA @ 50 V - - - Chassis, Stud Mount DO-5 -65°C ~ 190°C
C6D05170H Wolfspeed, Inc.

C6D05170H

5A 1700V SIC, SCHOTTKY DIODE

Wolfspeed, Inc.

3,185
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 21A 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 9 µA @ 1700 V 638pF @ 0V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
VS-16F120M Vishay General Semiconductor - Diodes Division

VS-16F120M

DIODE GEN PURP 1.2KV 16A DO203AA

Vishay General Semiconductor - Diodes Division

5
Datasheet - DO-203AA, DO-4, Stud Box Active Standard 1200 V 16A 1.23 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 29 ns - - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
VS-40HF160 Vishay General Semiconductor - Diodes Division

VS-40HF160

DIODE GEN PURP 1.6KV 40A DO203AB

Vishay General Semiconductor - Diodes Division

1
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1600 V 40A 1.5 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 4.5 mA @ 1600 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 160°C
VS-85HF120 Vishay General Semiconductor - Diodes Division

VS-85HF120

DIODE GEN PURP 1.2KV 85A DO203AB

Vishay General Semiconductor - Diodes Division

5,622
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1200 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 1200 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
VS-70HFR160 Vishay General Semiconductor - Diodes Division

VS-70HFR160

DIODE GEN PURP 1.6KV 70A DO203AB

Vishay General Semiconductor - Diodes Division

8,556
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1600 V 70A 1.46 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - 4.5 mA @ 1600 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 150°C
VS-70HFR120M Vishay General Semiconductor - Diodes Division

VS-70HFR120M

DIODE GP REV 1.2KV 70A DO203AB

Vishay General Semiconductor - Diodes Division

7,914
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1200 V 70A 1.35 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -40°C ~ 125°C
VS-123NQ100PBF Vishay General Semiconductor - Diodes Division

VS-123NQ100PBF

DIODE SCHOTTKY 100V 120A D-67

Vishay General Semiconductor - Diodes Division

3,904
Datasheet - D-67 HALF-PAK Bulk Active Schottky 100 V 120A 910 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 100 V 2650pF @ 5V, 1MHz - - Chassis Mount D-67 HALF-PAK -55°C ~ 175°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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