Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
UGS30JH DIODE GEN PURP 600V 30A TO263AB Taiwan Semiconductor Corporation	808	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 600 V	128pF @ 4V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 150°C
VS-EPX3007L-N3 DIODE GEN PURP 650V 30A TO247AD Vishay General Semiconductor - Diodes Division	499	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	30A	2.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	30 µA @ 650 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
IDP18E120XKSA1 DIODE GP 1.2KV 31A TO220-2-2 Infineon Technologies	423	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	1200 V	31A	2.15 V @ 18 A	Fast Recovery =< 500ns, > 200mA (Io)	195 ns	100 µA @ 1200 V	-	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 150°C
S3D10065A DIODE SIL CARB 650V 10A TO220AC SMC Diode Solutions	1,964	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	621pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC (TO-220-2)	-55°C ~ 175°C
S3D06065G DIODE SIL CARBIDE 650V 6A D2PAK SMC Diode Solutions	769	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	8 µA @ 650 V	382pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
VS-8EWS12S-M3 DIODE GEN PURP 1.2KV 8A DPAK Vishay General Semiconductor - Diodes Division	2,945	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	Standard	1200 V	8A	1.1 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 1200 V	-	-	-	Surface Mount	TO-252AA (DPAK)	-55°C ~ 150°C
RFNL5TJ6SFHGC9 DIODE GEN PURP 600V 5A TO220ACFP Rohm Semiconductor	2,739	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	5A	1.3 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	130 ns	10 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-220ACFP	150°C
RFUH20NS4STL DIODE GEN PURP 430V 20A LPDS Rohm Semiconductor	944	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	430 V	20A	1.7 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 430 V	-	-	-	Surface Mount	LPDS	150°C
RFN20NS4STL DIODE GEN PURP 430V 20A LPDS Rohm Semiconductor	883	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	430 V	20A	1.55 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 430 V	-	-	-	Surface Mount	LPDS	150°C
DLA20IM800PC-TUB DIODE GEN PURP 800V 20A TO263AA IXYS	1,039	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	800 V	20A	1.2 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	4pF @ 400V, 1MHz	-	-	Surface Mount	TO-263AA	-55°C ~ 175°C
RF505TF6SC9 DIODE GEN PURP 600V 5A TO220NFM Rohm Semiconductor	430	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	5A	1.7 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220NFM	150°C
C3D03065E DIODE SIL CARB 650V 11A TO252-2 Wolfspeed, Inc.	2,356	RFQ	Datasheet	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	11A	1.8 V @ 3 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	155pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
S4D05120A DIODE SIL CARB 1.2KV 5A TO220AC SMC Diode Solutions	853	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1200 V	302pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC (TO-220-2)	-55°C ~ 175°C
STTH12T06DI DIODE GP 600V 12A TO220AC INS STMicroelectronics	548	RFQ	Datasheet	-	TO-220-2 Insulated, TO-220AC	Tube	Active	Standard	600 V	12A	2.95 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	20 µA @ 600 V	-	-	-	Through Hole	TO-220AC ins	-40°C ~ 175°C
VS-E5TX2112S2LHM3 20A, 1200V, "X" SERIES GEN 5 FRE Vishay General Semiconductor - Diodes Division	835	RFQ	Datasheet	FRED Pt® G5	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	1200 V	20A	3.6 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	50 µA @ 1200 V	-	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
IDP08E65D2XKSA1 DIODE GEN PURP 650V 8A TO220-2 Infineon Technologies	2	RFQ	Datasheet	-	TO-220-2	Bulk	Active	Standard	650 V	8A	2.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	40 µA @ 650 V	-	-	-	Through Hole	TO-220-2	-40°C ~ 175°C
STTH30RQ06DY DIODE GEN PURP 600V 30A TO220AC STMicroelectronics	998	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	30A	2.95 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	40 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
DMA10P1200UZ-TRL DIODE GEN PURP 1.2KV 10A TO252AA IXYS	1,673	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Standard	1200 V	10A	1.55 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1200 V	1pF @ 400V, 1MHz	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C
VS-E4PH6006LHN3 DIODE GEN PURP 600V 60A TO247AD Vishay General Semiconductor - Diodes Division	456	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	60A	2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	68 ns	50 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
VS-3C08ET07T-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	1,934	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	45 µA @ 650 V	340pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C

FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.