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Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
STPS20SM100ST STMicroelectronics

STPS20SM100ST

DIODE SCHOTTKY 100V 20A TO220

STMicroelectronics

887
Datasheet - TO-220-3 Tube Active Schottky 100 V 20A 900 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 30 µA @ 100 V - - - Through Hole TO-220 150°C (Max)
CBS05F30,L3F Toshiba Semiconductor and Storage

CBS05F30,L3F

DIODE SCHOTTKY 30V 500MA CST2B

Toshiba Semiconductor and Storage

9,981
Datasheet - 2-SMD, No Lead Tape & Reel (TR) Active Schottky 30 V 500mA - Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 30 V 118pF @ 0V, 1MHz - - Surface Mount CST2B 125°C (Max)
VS-E5TX3012-M3 Vishay General Semiconductor - Diodes Division

VS-E5TX3012-M3

DIODE GEN PURP 1.2KV 30A TO220AC

Vishay General Semiconductor - Diodes Division

7,970
Datasheet FRED Pt® TO-220-2 Tube Active Standard 1200 V 30A 3.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 50 µA @ 1200 V - - - Through Hole TO-220AC -55°C ~ 175°C
DSEI25-06A IXYS

DSEI25-06A

DIODE GEN PURP 600V 25A TO220-2

IXYS

2,072
Datasheet - TO-220-2 Tube Active Standard 600 V 25A 1.31 V @ 25 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 100 µA @ 600 V 20pF @ 400V, 1MHz - - Through Hole TO-220-2 -40°C ~ 150°C
RB078BGE30STL Rohm Semiconductor

RB078BGE30STL

DIODE SCHOTTKY 30V 5A TO252GE

Rohm Semiconductor

2,500
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 30 V 5A 720 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 5 µA @ 30 V - - - Surface Mount TO-252GE 150°C
RFN20TF6SFHC9 Rohm Semiconductor

RFN20TF6SFHC9

DIODE GEN PURP 600V 20A TO220NFM

Rohm Semiconductor

458
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 20A 1.55 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220NFM 150°C (Max)
S3D06065I SMC Diode Solutions

S3D06065I

DIODE SIL CARB 650V 6A TO220

SMC Diode Solutions

891
Datasheet - TO-220-2 Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 8 µA @ 650 V 382pF @ 0V, 1MHz - - Through Hole TO-220-Isolation -55°C ~ 175°C
RFN10NS3STL Rohm Semiconductor

RFN10NS3STL

DIODE GEN PURP 350V 10A LPDS

Rohm Semiconductor

975
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 350 V 10A 1.5 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 350 V - - - Surface Mount LPDS 150°C
RFUH20TJ6SGC9 Rohm Semiconductor

RFUH20TJ6SGC9

DIODE GP 600V 20A TO220ACFP

Rohm Semiconductor

635
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 20A 2.8 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 600 V - - - Through Hole TO-220ACFP 150°C
1N4938-1 Microchip Technology

1N4938-1

DIODE GEN PURP 175V 100MA DO35

Microchip Technology

369
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 175 V 100mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 50 ns 100 nA @ 175 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
FFSD0665A onsemi

FFSD0665A

DIODE SIL CARBIDE 650V 11A DPAK

onsemi

2,396
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 11A 1.75 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 361pF @ 1V, 100kHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
VS-EPH3006LHN3 Vishay General Semiconductor - Diodes Division

VS-EPH3006LHN3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

180
Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 30A 2.65 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 26 ns 30 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
S3D06065E SMC Diode Solutions

S3D06065E

DIODE SIL CARBIDE 650V 6A DPAK

SMC Diode Solutions

682
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 8 µA @ 650 V 382pF @ 0V, 1MHz - - Surface Mount DPAK -55°C ~ 175°C
VS-E5PX3006L-N3 Vishay General Semiconductor - Diodes Division

VS-E5PX3006L-N3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

636
Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 30A 2.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 41 ns 20 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
TPMR10J S1G Taiwan Semiconductor Corporation

TPMR10J S1G

DIODE GEN PURP 600V 10A TO277A

Taiwan Semiconductor Corporation

2,672
Datasheet - TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 600 V 10A 1.8 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 10 µA @ 600 V 140pF @ 4V, 1MHz - - Surface Mount TO-277A (SMPC) -55°C ~ 175°C
UJ3D06512TS Qorvo

UJ3D06512TS

DIODE SIL CARB 650V 12A TO220-2

Qorvo

10,601
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 392pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
VS-E5TX1512S2LHM3 Vishay General Semiconductor - Diodes Division

VS-E5TX1512S2LHM3

DIODE GEN PURP 1.2KV 15A TO263AB

Vishay General Semiconductor - Diodes Division

694
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 15A 3.3 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 77.5 ns 50 µA @ 1200 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
STPSC6H065D STMicroelectronics

STPSC6H065D

DIODE SIL CARB 650V 6A TO220AC

STMicroelectronics

958
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.75 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 300pF @ 0V, 1MHz - - Through Hole TO-220AC -40°C ~ 175°C
VS-C4PU6006L-N3 Vishay General Semiconductor - Diodes Division

VS-C4PU6006L-N3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

500
Datasheet FRED Pt® TO-247-3 Tube Active Standard 600 V 30A 1.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 65 ns 50 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
SCS302AHGC9 Rohm Semiconductor

SCS302AHGC9

DIODE SIC 650V 2.15A TO220ACP

Rohm Semiconductor

643
Datasheet - TO-220-2 Tube Not For New Designs SiC (Silicon Carbide) Schottky 650 V 2.15A 1.5 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 10.8 µA @ 650 V 110pF @ 1V, 1MHz - - Through Hole TO-220ACP 175°C (Max)
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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