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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N6857-1/TR Microchip Technology

1N6857-1/TR

DIODE SCHOTTKY 20V 150MA DO35

Microchip Technology

2,310
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Schottky 20 V 150mA 750 mV @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 4.5pF @ 0V, 1MHz - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
CDLL5818E3/TR Microchip Technology

CDLL5818E3/TR

DIODE SCHOTTKY 30V 1A DO213AB

Microchip Technology

9,680
Datasheet - DO-213AB, MELF (Glass) Tape & Reel (TR) Active Schottky 30 V 1A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 30 V 0.9pF @ 5V, 1MHz - - Surface Mount DO-213AB (MELF, LL41) -
FR12BR02 GeneSiC Semiconductor

FR12BR02

DIODE GEN PURP REV 100V 12A DO4

GeneSiC Semiconductor

7,472
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 100 V 12A 800 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
FR12DR02 GeneSiC Semiconductor

FR12DR02

DIODE GEN PURP REV 200V 12A DO4

GeneSiC Semiconductor

6,320
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 200 V 12A 800 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
FR12GR02 GeneSiC Semiconductor

FR12GR02

DIODE GEN PURP REV 400V 12A DO4

GeneSiC Semiconductor

7,185
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 400 V 12A 800 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
FR12JR02 GeneSiC Semiconductor

FR12JR02

DIODE GEN PURP REV 600V 12A DO4

GeneSiC Semiconductor

6,966
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 600 V 12A 800 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
1N4944 Microchip Technology

1N4944

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

3,277
Datasheet - A, Axial Bulk Discontinued at Digi-Key Standard 400 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V 35pF @ 12V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
1N5819UR-1/TR Microchip Technology

1N5819UR-1/TR

DIODE SCHOTTKY 45V 1A DO213AB

Microchip Technology

9,486
Datasheet - DO-213AB, MELF (Glass) Tape & Reel (TR) Active Schottky 45 V 1A 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz - - Surface Mount DO-213AB (MELF, LL41) -65°C ~ 125°C
1N4945 Microchip Technology

1N4945

UFR,FRR

Microchip Technology

3,599
Datasheet * - Bulk Active - - - - - - - - - - - - -
VS-86HF20 Vishay General Semiconductor - Diodes Division

VS-86HF20

DIODE GEN PURP 200V 85A DO203AB

Vishay General Semiconductor - Diodes Division

3,538
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 200 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 200 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
VS-86HFR20 Vishay General Semiconductor - Diodes Division

VS-86HFR20

DIODE GP REV 200V 85A DO203AB

Vishay General Semiconductor - Diodes Division

4,894
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 200 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 200 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
JANTX1N5415US Microchip Technology

JANTX1N5415US

DIODE GEN PURP 50V 3A B SQ-MELF

Microchip Technology

3,857
Datasheet - SQ-MELF, B Bulk Active Standard 50 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 50 V - Military MIL-PRF-19500/411 Surface Mount B, SQ-MELF -65°C ~ 175°C
JAN1N6642U Microchip Technology

JAN1N6642U

DIODE GEN PURP 75V 300MA D-5D

Microchip Technology

2,601
Datasheet - SQ-MELF, D Bulk Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V - Military MIL-PRF-19500/578 Surface Mount D-5D -65°C ~ 175°C
JANTXV1N5614/TR Microchip Technology

JANTXV1N5614/TR

DIODE GEN PURP 200V 1A

Microchip Technology

7,435
Datasheet - A, Axial Tape & Reel (TR) Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 200 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
VS-86HF60 Vishay General Semiconductor - Diodes Division

VS-86HF60

DIODE GEN PURP 600V 85A DO203AB

Vishay General Semiconductor - Diodes Division

3,372
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 600 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 600 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
JAN1N5415US/TR Microchip Technology

JAN1N5415US/TR

DIODE GEN PURP 50V 3A

Microchip Technology

8,557
Datasheet - B, Axial Tape & Reel (TR) Active Standard 50 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 50 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
GC20MPS12-247 GeneSiC Semiconductor

GC20MPS12-247

DIODE SIL CARB 1.2KV 90A TO247-2

GeneSiC Semiconductor

6,667
Datasheet SiC Schottky MPS™ TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 90A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 18 µA @ 1200 V 1298pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
JANTXV1N4247 Microchip Technology

JANTXV1N4247

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

5,665
Datasheet - A, Axial Bulk Active Standard 600 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 600 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
S3D40065H2 SMC Diode Solutions

S3D40065H2

650V, 40A, TO-247AC, SIC SCHOTTK

SMC Diode Solutions

9
Datasheet - TO-247-2 Tube Active Schottky 650 V 128A 1.7 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 650 V 3100pF @ 0V, 1MHz - - Through Hole TO-247AC -55°C ~ 175°C
FR20K05 GeneSiC Semiconductor

FR20K05

DIODE GEN PURP 800V 20A DO5

GeneSiC Semiconductor

6,327
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 800 V 20A 1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 800 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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