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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
FR20A02 GeneSiC Semiconductor

FR20A02

DIODE GEN PURP 50V 20A DO5

GeneSiC Semiconductor

5,488
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 50 V 20A 1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR20B02 GeneSiC Semiconductor

FR20B02

DIODE GEN PURP 100V 20A DO5

GeneSiC Semiconductor

9,514
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 100 V 20A 1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR20D02 GeneSiC Semiconductor

FR20D02

DIODE GEN PURP 200V 20A DO5

GeneSiC Semiconductor

5,103
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 200 V 20A 1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR20G02 GeneSiC Semiconductor

FR20G02

DIODE GEN PURP 400V 20A DO5

GeneSiC Semiconductor

2,977
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 400 V 20A 1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
FR20J02 GeneSiC Semiconductor

FR20J02

DIODE GEN PURP 600V 20A DO5

GeneSiC Semiconductor

5,574
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 600 V 20A 1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
1N5807US/TR Microchip Technology

1N5807US/TR

DIODE GEN PURP 50V 3A B SQ-MELF

Microchip Technology

8,942
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 50 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 175°C
1N5809US/TR Microchip Technology

1N5809US/TR

DIODE GEN PURP 100V 3A B SQ-MELF

Microchip Technology

9,988
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 175°C
GD30MPS12J GeneSiC Semiconductor

GD30MPS12J

DIODE SIL CARB 1.2KV 59A TO263-7

GeneSiC Semiconductor

5,115
Datasheet SiC Schottky MPS™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active SiC (Silicon Carbide) Schottky 1200 V 59A 1.8 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 1101pF @ 1V, 1MHz - - Surface Mount TO-263-7 -55°C ~ 175°C
IDC40D120T6MX1SA4 Infineon Technologies

IDC40D120T6MX1SA4

DIODE GP 1.2KV 75A WAFER

Infineon Technologies

9,611
Datasheet - Die Bulk Obsolete Standard 1200 V 75A 2.05 V @ 75 A Standard Recovery >500ns, > 200mA (Io) - 14 µA @ 1200 V - - - Surface Mount Sawn on foil -40°C ~ 175°C
JAN1N5415US Microchip Technology

JAN1N5415US

DIODE GEN PURP 50V 3A AXIAL

Microchip Technology

6,713
Datasheet - B, Axial Bulk Active Standard 50 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 50 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
GAP3SLT33-220FP GeneSiC Semiconductor

GAP3SLT33-220FP

DIODE SIC 3.3KV 300MA TO220FP

GeneSiC Semiconductor

2,729
Datasheet SiC Schottky MPS™ TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 3300 V 300mA 1.7 V @ 300 mA - 0 ns 5 µA @ 3300 V 42pF @ 1V, 1MHz - - Through Hole TO-220FP -55°C ~ 175°C
CDLL5195 Microchip Technology

CDLL5195

DIODE GP 180V 200MA DO213AA

Microchip Technology

7,506
Datasheet - DO-213AA Bulk Active Standard 180 V 200mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 100 µA @ 180 V - - - Surface Mount DO-213AA -65°C ~ 175°C
VS-72HFL100S05 Vishay General Semiconductor - Diodes Division

VS-72HFL100S05

DIODE GEN PURP 1KV 70A DO203AB

Vishay General Semiconductor - Diodes Division

3,345
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1000 V 70A 1.35 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
VS-72HFLR100S05 Vishay General Semiconductor - Diodes Division

VS-72HFLR100S05

DIODE GP REV 1KV 70A DO203AB

Vishay General Semiconductor - Diodes Division

8,205
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1000 V 70A 1.35 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
APT60D100SG/TR Microchip Technology

APT60D100SG/TR

DIODE GEN PURP 1KV 60A D3PAK

Microchip Technology

4,993
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active Standard 1000 V 60A 2.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 280 ns 250 µA @ 1000 V - - - Surface Mount D3PAK -55°C ~ 175°C
MNS1N5811US/TR Microchip Technology

MNS1N5811US/TR

DIODE GP 150V 3A SQ-MELF B

Microchip Technology

6,349
Datasheet - SQ-MELF, B Bulk Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 175°C
JAN1N5807US Microchip Technology

JAN1N5807US

DIODE GEN PURP 50V 6A B SQ-MELF

Microchip Technology

6,768
Datasheet - SQ-MELF, B Bulk Active Standard 50 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTX1N5186 Microchip Technology

JANTX1N5186

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

4,791
Datasheet - B, Axial Bulk Active Standard 100 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 2 µA @ 100 V - Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
JAN1N5551US Microchip Technology

JAN1N5551US

DIODE GEN PURP 400V 3A D-5B

Microchip Technology

9,654
Datasheet - SQ-MELF, E Bulk Active Standard 400 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 400 V - Military MIL-PRF-19500/420 Surface Mount D-5B -65°C ~ 175°C
JANTX1N5809US/TR Microchip Technology

JANTX1N5809US/TR

DIODE GEN PURP 100V 3A B SQ-MELF

Microchip Technology

7,897
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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