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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
19TQ015STRL Vishay General Semiconductor - Diodes Division

19TQ015STRL

DIODE SCHOTTKY 15V 19A TO263AB

Vishay General Semiconductor - Diodes Division

8,611
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete Schottky 15 V 19A 360 mV @ 19 A Fast Recovery =< 500ns, > 200mA (Io) - 1.5 mA @ 15 V - - - Surface Mount TO-263AB (D2PAK) -55°C ~ 125°C
19TQ015STRR Vishay General Semiconductor - Diodes Division

19TQ015STRR

DIODE SCHOTTKY 15V 19A TO263AB

Vishay General Semiconductor - Diodes Division

4,955
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete Schottky 15 V 19A 360 mV @ 19 A Fast Recovery =< 500ns, > 200mA (Io) - 1.5 mA @ 15 V - - - Surface Mount TO-263AB (D2PAK) -55°C ~ 125°C
CBR08P65D Bruckewell

CBR08P65D

SIC SCHOTTKY DIODE,650V,8A,TO-25

Bruckewell

13
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active SiC (Silicon Carbide) Schottky 650 V 29A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 25 µA @ 650 V - Automotive AEC-Q101 Surface Mount TO-252-2L -55°C ~ 175°C
RURG30120 onsemi

RURG30120

DIODE GEN PURP 1.2KV 30A TO247-2

onsemi

4,944
Datasheet - TO-247-2 Tube Obsolete Avalanche 1200 V 30A 2.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 250 µA @ 1200 V - - - Through Hole TO-247-2 -65°C ~ 175°C
VS-30APF06-M3 Vishay General Semiconductor - Diodes Division

VS-30APF06-M3

DIODE GEN PURP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division

7,857
Datasheet - TO-247-3 Tube Active Standard 600 V 30A 1.41 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 600 V - - - Through Hole TO-247AC -40°C ~ 150°C
VS-30APF12-M3 Vishay General Semiconductor - Diodes Division

VS-30APF12-M3

DIODE GEN PURP 1.2KV 30A TO247AC

Vishay General Semiconductor - Diodes Division

6,452
Datasheet - TO-247-3 Tube Active Standard 1200 V 30A 1.41 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 450 ns 100 µA @ 1200 V - - - Through Hole TO-247AC -40°C ~ 150°C
VS-30APF02-M3 Vishay General Semiconductor - Diodes Division

VS-30APF02-M3

DIODE SCHOTTKY 100V 3A TO247AC

Vishay General Semiconductor - Diodes Division

6,690
Datasheet - TO-247-3 Tube Active Schottky 100 V 3A 790 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 100 V 115pF @ 5V, 1MHz - - Through Hole TO-247AC -55°C ~ 175°C
VS-30APF04-M3 Vishay General Semiconductor - Diodes Division

VS-30APF04-M3

DIODE GEN PURP 400V 30A TO247AC

Vishay General Semiconductor - Diodes Division

4,095
Datasheet - TO-247-3 Tube Active Standard 400 V 30A 1.41 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 100 µA @ 400 V - - - Through Hole TO-247AC -40°C ~ 150°C
VS-30EPF02-M3 Vishay General Semiconductor - Diodes Division

VS-30EPF02-M3

DIODE GP 200V 30A TO247AC

Vishay General Semiconductor - Diodes Division

6,406
Datasheet - TO-247-2 Tube Active Standard 200 V 30A 1.41 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 100 µA @ 200 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
VS-30EPF04-M3 Vishay General Semiconductor - Diodes Division

VS-30EPF04-M3

DIODE GP 400V 30A TO247AC

Vishay General Semiconductor - Diodes Division

9,746
Datasheet - TO-247-2 Tube Active Standard 400 V 30A 1.41 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 400 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
JANTXV1N4150-1 Microchip Technology

JANTXV1N4150-1

DIODE GEN PURP 50V 200MA DO35

Microchip Technology

3,512
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 50 V 200mA 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 4 ns 100 nA @ 50 V - Military MIL-PRF-19500/231 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N4371A/TR Microchip Technology

1N4371A/TR

DIODE DO35

Microchip Technology

2,324
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active - - - 1.1 V @ 200 mA - - 75 µA @ 1 V - - - Through Hole DO-204AH (DO-35) -
1N4454UR-1/TR Microchip Technology

1N4454UR-1/TR

DIODE GEN PURP 50V 200MA DO213AA

Microchip Technology

7,083
Datasheet - DO-213AA Tape & Reel (TR) Active Standard 50 V 200mA 1 V @ 10 mA Small Signal =< 200mA (Io), Any Speed 4 ns 100 nA @ 50 V - - - Surface Mount DO-213AA -55°C ~ 175°C
CD4150V Microchip Technology

CD4150V

DIODE GEN PURP 50V 200MA DIE

Microchip Technology

2,445
Datasheet - Die Bulk Active Standard 50 V 200mA 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 4 ns 100 nA @ 50 V 2.5pF @ 0V, 1MHz - - Surface Mount Die -55°C ~ 175°C
UPS1040/TR13 Microchip Technology

UPS1040/TR13

DIODE SCHOTTKY 40V 10A POWERMITE

Microchip Technology

4,975
Datasheet - DO-216AA Tape & Reel (TR) Active Schottky 40 V 10A 490 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 300 µA @ 35 V 700pF @ 4V, 1MHz - - Surface Mount Powermite -55°C ~ 150°C
SICB10120Y-TP Micro Commercial Co

SICB10120Y-TP

SCHOTTKY DIODES

Micro Commercial Co

7,541
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.54 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 13 µA @ 1200 V 700pF @ 0V, 1MHz - - Surface Mount D2PAK -55°C ~ 175°C
VS-16FR40 Vishay General Semiconductor - Diodes Division

VS-16FR40

DIODE GEN PURP 400V 16A DO203AA

Vishay General Semiconductor - Diodes Division

4,779
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 400 V 16A 1.23 V @ 50 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 400 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
30CPF06 Vishay General Semiconductor - Diodes Division

30CPF06

DIODE GEN PURP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division

7,273
Datasheet - TO-247-3 Tube Obsolete Standard 600 V 30A 1.41 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 600 V - - - Through Hole TO-247AC -40°C ~ 150°C
30EPF06 Vishay General Semiconductor - Diodes Division

30EPF06

DIODE GP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division

4,027
Datasheet - TO-247-2 Tube Obsolete Standard 600 V 30A 1.41 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 600 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
BYC60W-1200PQ WeEn Semiconductors

BYC60W-1200PQ

BYC60W-1200P/TO247-2L/STANDARD M

WeEn Semiconductors

4,320
Datasheet - TO-247-2 Bulk Active Standard 1200 V 60A 3.3 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 96 ns 250 µA @ 1200 V - - - Through Hole TO-247-2 175°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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