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Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
DPG30I600AHA IXYS

DPG30I600AHA

POWER DIODE DISCRETES-FRED TO-24

IXYS

4,099
Datasheet - - Tube Active - - - - - - - - - - - - -
STTA2006PIRG STMicroelectronics

STTA2006PIRG

DIODE GEN PURP 600V 20A DOP3I

STMicroelectronics

7,075
Datasheet TURBOSWITCH™ DOP3I-2 Insulated (Straight Leads) Bulk Obsolete Standard 600 V 20A 1.75 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 100 µA @ 600 V - - - Through Hole DOP3I 150°C (Max)
VS-30ETH06FP-N3 Vishay General Semiconductor - Diodes Division

VS-30ETH06FP-N3

DIODE GP 600V 30A TO220-2FP

Vishay General Semiconductor - Diodes Division

5,081
Datasheet FRED Pt® TO-220-2 Full Pack Tube Active Standard 600 V 30A 2.6 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 600 V - - - Through Hole TO-220-2 Full Pack -65°C ~ 175°C
20ETF06S Vishay General Semiconductor - Diodes Division

20ETF06S

DIODE GEN PURP 600V 20A TO263AB

Vishay General Semiconductor - Diodes Division

2,177
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 600 V 20A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 600 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
20ETF06STRL Vishay General Semiconductor - Diodes Division

20ETF06STRL

DIODE GEN PURP 600V 20A TO263AB

Vishay General Semiconductor - Diodes Division

9,646
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete Standard 600 V 20A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 600 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
CDLL4150 Microchip Technology

CDLL4150

DIODE GEN PURP 75V 300MA DO213AA

Microchip Technology

7,699
Datasheet - DO-213AA Bulk Active Standard 75 V 300mA 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V 2.5pF @ 0V, 1MHz - - Surface Mount DO-213AA -65°C ~ 175°C
SCS205KGC Rohm Semiconductor

SCS205KGC

DIODE SIL CARB 1.2KV 5A TO220AC

Rohm Semiconductor

7,558
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 5A 1.6 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 270pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
VS-6FR40 Vishay General Semiconductor - Diodes Division

VS-6FR40

DIODE GP REV 400V 6A DO203AA

Vishay General Semiconductor - Diodes Division

4,693
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 400 V 6A 1.1 V @ 19 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 400 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
1N4370A/TR Microchip Technology

1N4370A/TR

DIODE DO35

Microchip Technology

6,789
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active - - - 1.1 V @ 200 mA - - 100 µA @ 1 V - - - Through Hole DO-204AH (DO-35) -
UPR60E3/TR13 Microchip Technology

UPR60E3/TR13

DIODE GEN PURP 600V 2A POWERMITE

Microchip Technology

9,870
Datasheet - DO-216AA Tape & Reel (TR) Active Standard 600 V 2A 1.6 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 600 V - - - Surface Mount Powermite -55°C ~ 150°C
DMA50I1600HA IXYS

DMA50I1600HA

DIODE GEN PURP 1.6KV 50A TO247

IXYS

2,981
Datasheet - TO-247-2 Tube Active Standard 1600 V 50A 1.3 V @ 50 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 1600 V 19pF @ 400V, 1MHz - - Through Hole TO-247 -55°C ~ 175°C
PCFF30H120SWF onsemi

PCFF30H120SWF

1200V/30A GEN7 FRD HS SAWN-ON-FO

onsemi

7,294
Datasheet - Die Tray Active Standard 1200 V 30A 1.9 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 222 ns 16 A @ 1200 V - - - Surface Mount Wafer -40°C ~ 175°C
65PQ015 Vishay General Semiconductor - Diodes Division

65PQ015

DIODE SCHOTTKY 15V 65A TO247AC

Vishay General Semiconductor - Diodes Division

9,531
Datasheet - TO-247-3 Tube Obsolete Schottky 15 V 65A 500 mV @ 65 A Fast Recovery =< 500ns, > 200mA (Io) - 18 mA @ 15 V - - - Through Hole TO-247AC -55°C ~ 125°C
VS-65APF06L-M3 Vishay General Semiconductor - Diodes Division

VS-65APF06L-M3

DIODE GEN PURP 600V 65A TO247AD

Vishay General Semiconductor - Diodes Division

7,773
Datasheet - TO-247-3 Tube Active Standard 600 V 65A 1.32 V @ 65 A Fast Recovery =< 500ns, > 200mA (Io) 180 ns 100 µA @ 600 V - - - Through Hole TO-247AD -40°C ~ 150°C
VS-65EPF06L-M3 Vishay General Semiconductor - Diodes Division

VS-65EPF06L-M3

DIODE GEN PURP 600V 65A TO247AD

Vishay General Semiconductor - Diodes Division

8,272
Datasheet - TO-247-2 Tube Active Standard 600 V 65A 1.32 V @ 65 A Fast Recovery =< 500ns, > 200mA (Io) 180 ns 100 µA @ 600 V - - - Through Hole TO-247AD -40°C ~ 150°C
TSN525M60 S3G Taiwan Semiconductor Corporation

TSN525M60 S3G

DIODE SCHOTTKY 60V 25A 8DFN

Taiwan Semiconductor Corporation

8,040
Datasheet - 8-PowerLDFN Tape & Reel (TR) Active Schottky 60 V 25A 630 mV @ 25 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 60 V - - - Surface Mount 8-PDFN (5x6) -55°C ~ 150°C
1N4154-1/TR Microchip Technology

1N4154-1/TR

DIODE GEN PURP 35V 200MA DO35

Microchip Technology

5,385
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 35 V 200mA 1 V @ 30 mA Small Signal =< 200mA (Io), Any Speed 2 ns 100 nA @ 25 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
1N4154-1E3 Microchip Technology

1N4154-1E3

DIODE GEN PURP 35V 200MA DO35

Microchip Technology

8,804
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 35 V 200mA 1 V @ 30 mA Small Signal =< 200mA (Io), Any Speed 2 ns 100 nA @ 25 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
1N3595 Microchip Technology

1N3595

DIODE GEN PURP 125V 200MA AXIAL

Microchip Technology

9,867
Datasheet - Axial Bulk Active Standard 125 V 200mA 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - - - Through Hole Axial -65°C ~ 150°C
WB100FC120ALZ WeEn Semiconductors

WB100FC120ALZ

WB100FC120AL/NAU000/NO MARK*CHIP

WeEn Semiconductors

4,923
Datasheet - Die Bulk Active Standard 1200 V 100A 3.3 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 250 µA @ 1200 V - - - Surface Mount Wafer 175°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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