FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IPP086N10N3GXKSA1 MOSFET N-CH 100V 80A TO220-3 Infineon Technologies	7,855	RFQ	Datasheet	OptiMOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	80A (Tc)	6V, 10V	8.6mOhm @ 73A, 10V	3.5V @ 75µA	55 nC @ 10 V	±20V	3980 pF @ 50 V	-	125W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3
SIHA6N65E-E3 MOSFET N-CHANNEL 650V 7A TO220 Vishay Siliconix	2,348	RFQ	Datasheet	E	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7A (Tc)	10V	600mOhm @ 3A, 10V	4V @ 250µA	48 nC @ 10 V	±30V	1640 pF @ 100 V	-	31W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220 Full Pack
NTTFS6H880NLTAG MOSFET N-CH 80V 6.6A/22A 8WDFN onsemi	2,176	RFQ	Datasheet	-	8-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	6.6A (Ta), 22A (Tc)	4.5V, 10V	29mOhm @ 5A, 10V	2V @ 20µA	9 nC @ 10 V	±20V	431 pF @ 40 V	-	3.1W (Ta), 33W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-WDFN (3.3x3.3)
SIHB12N60E-GE3 MOSFET N-CH 600V 12A D2PAK Vishay Siliconix	9,837	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	12A (Tc)	10V	380mOhm @ 6A, 10V	4V @ 250µA	58 nC @ 10 V	±30V	937 pF @ 100 V	-	147W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
TK58E06N1,S1X MOSFET N-CH 60V 58A TO220 Toshiba Semiconductor and Storage	8,657	RFQ	Datasheet	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	58A (Ta)	10V	5.4mOhm @ 29A, 10V	4V @ 500µA	46 nC @ 10 V	±20V	3400 pF @ 30 V	-	110W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
PSMN6R0-25YLDX MOSFET N-CH 25V 61A LFPAK56 Nexperia USA Inc.	3,776	RFQ	Datasheet	-	SC-100, SOT-669	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	25 V	61A (Tc)	4.5V, 10V	6.75mOhm @ 15A, 10V	2.2V @ 1mA	10.5 nC @ 10 V	±20V	705 pF @ 12 V	Schottky Diode (Body)	43W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	LFPAK56, Power-SO8
NTTFS030N06CTAG MOSFET N-CH 60V 6A/19A 8WDFN onsemi	6,909	RFQ	Datasheet	-	8-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	6A (Ta), 19A (Tc)	10V	29.7mOhm @ 3A, 10V	4V @ 13µA	4.7 nC @ 10 V	±20V	255 pF @ 30 V	-	2.5W (Ta), 23W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-WDFN (3.3x3.3)
SIS780DN-T1-GE3 MOSFET N-CH 30V 18A PPAK1212-8 Vishay Siliconix	5,217	RFQ	Datasheet	-	PowerPAK® 1212-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	18A (Tc)	4.5V, 10V	13.5mOhm @ 15A, 10V	2.3V @ 250µA	24.5 nC @ 10 V	±20V	722 pF @ 15 V	Schottky Diode (Body)	27.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8
BUK7Y72-80EX MOSFET N-CH 80V 16A LFPAK56 Nexperia USA Inc.	3,357	RFQ	Datasheet	TrenchMOS™	SC-100, SOT-669	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	16A (Tc)	10V	72mOhm @ 5A, 10V	4V @ 1mA	9.8 nC @ 10 V	±20V	633 pF @ 25 V	-	45W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	LFPAK56, Power-SO8
STQ1NC45R-AP MOSFET N-CH 450V 500MA TO92-3 STMicroelectronics	7,137	RFQ	Datasheet	SuperMESH™	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	450 V	500mA (Tc)	10V	4.5Ohm @ 500mA, 10V	3.7V @ 250µA	7 nC @ 10 V	±30V	160 pF @ 25 V	-	3.1W (Tc)	-65°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3
SI5448DU-T1-GE3 MOSFET N-CH 40V 25A PPAK Vishay Siliconix	7,614	RFQ	Datasheet	TrenchFET®	PowerPAK® ChipFET™ Single	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	25A (Tc)	4.5V, 10V	7.75mOhm @ 15A, 10V	2.5V @ 250µA	20 nC @ 4.5 V	+20V, -16V	1765 pF @ 20 V	-	31W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® ChipFet Single
IPP60R280P6XKSA1 MOSFET N-CH 600V 13.8A TO220-3 Infineon Technologies	6,660	RFQ	Datasheet	CoolMOS™	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	13.8A (Tc)	10V	280mOhm @ 6.5A, 10V	3.5V @ 430µA	43 nC @ 10 V	±20V	950 pF @ 100 V	-	104W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3
SIHP14N60E-GE3 MOSFET N-CH 600V 13A TO220AB Vishay Siliconix	8,456	RFQ	Datasheet	E	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V	309mOhm @ 7A, 10V	4V @ 250µA	64 nC @ 10 V	±30V	1205 pF @ 100 V	-	147W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
SIHP12N65E-GE3 MOSFET N-CH 650V 12A TO220AB Vishay Siliconix	4,304	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	380mOhm @ 6A, 10V	4V @ 250µA	70 nC @ 10 V	±30V	1224 pF @ 100 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
SIHA14N60E-E3 MOSFET N-CHANNEL 600V 13A TO220 Vishay Siliconix	2,150	RFQ	Datasheet	E	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V	309mOhm @ 7A, 10V	4V @ 250µA	64 nC @ 10 V	±30V	1205 pF @ 100 V	-	147W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220 Full Pack
IRF830ALPBF MOSFET N-CH 500V 5A I2PAK Vishay Siliconix	3,839	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	5A (Tc)	10V	1.4Ohm @ 3A, 10V	4.5V @ 250µA	24 nC @ 10 V	±30V	620 pF @ 25 V	-	3.1W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK
SIHB12N50E-GE3 MOSFET N-CH 500V 10.5A D2PAK Vishay Siliconix	2,746	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	500 V	10.5A (Tc)	10V	380mOhm @ 6A, 10V	4V @ 250µA	50 nC @ 10 V	±30V	886 pF @ 100 V	-	114W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
SIHF7N60E-E3 MOSFET N-CH 600V 7A TO220 Vishay Siliconix	8,214	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Tc)	10V	600mOhm @ 3.5A, 10V	4V @ 250µA	40 nC @ 10 V	±30V	680 pF @ 100 V	-	31W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220 Full Pack
TK34A10N1,S4X MOSFET N-CH 100V 34A TO220SIS Toshiba Semiconductor and Storage	6,833	RFQ	Datasheet	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	34A (Tc)	10V	9.5mOhm @ 17A, 10V	4V @ 500µA	38 nC @ 10 V	±20V	2600 pF @ 50 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
IRFBC40APBF-BE3 MOSFET N-CH 600V 6.2A TO220AB Vishay Siliconix	7,524	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	6.2A (Tc)	-	1.2Ohm @ 3.7A, 10V	4V @ 250µA	42 nC @ 10 V	±30V	1036 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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