FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
MSC025SMA120B4 TRANS SJT N-CH 1200V 103A TO247 Microchip Technology	2,475	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	103A (Tc)	20V	31mOhm @ 40A, 20V	2.8V @ 3mA	232 nC @ 20 V	+23V, -10V	3020 pF @ 1000 V	-	500W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
IXTN62N50L MOSFET N-CH 500V 62A SOT227B IXYS	2,139	RFQ	Datasheet	Linear	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	62A (Tc)	20V	100mOhm @ 500mA, 20V	5V @ 250µA	550 nC @ 20 V	±30V	11500 pF @ 25 V	-	800W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
IXFN50N120SIC SICFET N-CH 1200V 47A SOT227B IXYS	9,273	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	47A (Tc)	20V	50mOhm @ 40A, 20V	2.4V @ 10mA	100 nC @ 20 V	+20V, -5V	1900 pF @ 1000 V	-	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
FBG10N05ASH GAN FET HEMT 100V 5A 4FSMD-A EPC Space, LLC	5,947	RFQ	Datasheet	eGaN®	4-SMD, No Lead	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	5A (Tc)	5V	45mOhm @ 5A, 5V	2.5V @ 1.2mA	2.2 nC @ 5 V	+6V, -4V	233 pF @ 50 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	4-SMD
FBG20N04ASH GAN FET HEMT 200V 4A 4FSMD-A EPC Space, LLC	7,918	RFQ	Datasheet	e-GaN®	4-SMD, No Lead	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	200 V	4A (Tc)	5V	130mOhm @ 4A, 5V	2.8V @ 1mA	3 nC @ 5 V	+6V, -4V	150 pF @ 100 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	4-SMD
IPS70R1K4P7SAKMA1 MOSFET N-CH 700V 4A TO251-3 Infineon Technologies	3,749	RFQ	Datasheet	CoolMOS™ P7	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	700 V	4A (Tc)	10V	1.4Ohm @ 700mA, 10V	3.5V @ 40µA	4.7 nC @ 10 V	±16V	158 pF @ 400 V	-	22.7W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO251-3
TSM2N7002KCU 60V, 0.24A, SINGLE N-CHANNEL POW Taiwan Semiconductor Corporation	8,989	RFQ	Datasheet	-	SC-70, SOT-323	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	240mA (Ta)	4.5V, 10V	2.5Ohm @ 240mA, 10V	2.5V @ 250µA	0.91 nC @ 4.5 V	±20V	30 pF @ 30 V	-	298mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-323
SUD80460E-BE3 MOSFET N-CH 150V 42A TO252AA Vishay Siliconix	7,702	RFQ	Datasheet	ThunderFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	42A (Tc)	10V	44.7mOhm @ 8.3A, 10V	4V @ 250µA	16 nC @ 10 V	±20V	560 pF @ 50 V	-	65.2W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA
PJC7412_R1_00001 30V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	9,543	RFQ	Datasheet	-	SC-70, SOT-323	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	30 V	500mA (Ta)	1.5V, 4.5V	1.2Ohm @ 500mA, 4.5V	1.1V @ 250µA	0.87 nC @ 4.5 V	±10V	34 pF @ 15 V	-	350mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-323
PJA3412-AU_R2_000A1 30V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	6,607	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	20 V	4.1A (Ta)	1.8V, 4.5V	56mOhm @ 4.1A, 4.5V	1.2V @ 250µA	4.6 nC @ 4.5 V	±12V	350 pF @ 10 V	-	1.25W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23
IPA50R950CEXKSA2 MOSFET N-CH 500V 3.7A TO220 Infineon Technologies	2,409	RFQ	Datasheet	CoolMOS™ CE	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	3.7A (Tc)	13V	950mOhm @ 1.2A, 13V	3.5V @ 100µA	10.5 nC @ 10 V	±20V	231 pF @ 100 V	-	25.7W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-FP
PJQ1902_R1_00001 30V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	6,224	RFQ	Datasheet	-	3-UFDFN	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	30 V	500mA (Ta)	1.5V, 4.5V	1.2Ohm @ 350mA, 4.5V	1.1V @ 250µA	0.87 nC @ 4.5 V	±10V	34 pF @ 15 V	-	700mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	3-DFN (0.6x1)
PXN6R7-30QLJ PXN6R7-30QL/SOT8002/MLPAK33 Nexperia USA Inc.	81	RFQ	Datasheet	TrenchMOS™	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	12.7A (Ta), 62A (Tc)	4.5V, 10V	6.7mOhm @ 12.7A, 10V	2.2V @ 250µA	24.8 nC @ 10 V	±20V	1150 pF @ 15 V	-	1.7W (Ta), 40.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	MLPAK33
PJE8412_R1_00001 30V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	5,893	RFQ	Datasheet	-	SOT-523	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	30 V	350mA (Ta)	1.5V, 4.5V	1.2Ohm @ 350mA, 4.5V	1.1V @ 250µA	0.87 nC @ 4.5 V	±10V	34 pF @ 15 V	-	300mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-523
SSM6J213FE(TE85L,F MOSFET P CH 20V 2.6A ES6 Toshiba Semiconductor and Storage	8,793	RFQ	Datasheet	U-MOSVI	SOT-563, SOT-666	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	2.6A (Ta)	1.5V, 4.5V	103mOhm @ 1.5A, 4.5V	1V @ 1mA	4.7 nC @ 4.5 V	±8V	290 pF @ 10 V	-	500mW (Ta)	150°C (TJ)	-	-	Surface Mount	ES6
IPAN70R600P7SXKSA1 MOSFET N-CH 700V 8.5A TO220 Infineon Technologies	8,288	RFQ	Datasheet	CoolMOS™ P7	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	700 V	8.5A (Tc)	10V	600mOhm @ 1.8A, 10V	3.5V @ 90µA	10.5 nC @ 10 V	±16V	364 pF @ 400 V	-	24.9W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP
SI3493DDV-T1-GE3 MOSFET P-CHANNEL 20V 8A 6TSOP Vishay Siliconix	5,059	RFQ	Datasheet	TrenchFET®	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	8A (Tc)	1.8V, 4.5V	24mOhm @ 7.5A, 4.5V	1V @ 250µA	30 nC @ 4.5 V	±8V	1825 pF @ 10 V	-	3.6W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-TSOP
RAL025P01TCR MOSFET P-CH 12V 2.5A TUMT6 Rohm Semiconductor	6,434	RFQ	Datasheet	-	6-SMD, Flat Leads	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	12 V	2.5A (Ta)	1.5V, 4.5V	62mOhm @ 2.5A, 4.5V	1V @ 1mA	16 nC @ 4.5 V	-8V	2000 pF @ 6 V	-	320mW (Ta)	150°C (TJ)	-	-	Surface Mount	TUMT6
SSM5H08TU,LF MOSFET N-CH 20V 1.5A UFV Toshiba Semiconductor and Storage	2	RFQ	Datasheet	U-MOSIII	6-SMD (5 Leads), Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.5A (Ta)	2.5V, 4V	160mOhm @ 750mA, 4V	1.1V @ 100µA	-	±12V	125 pF @ 10 V	Schottky Diode (Isolated)	500mW (Ta)	150°C	-	-	Surface Mount	UFV
IPAN70R360P7SXKSA1 MOSFET N-CH 700V 12.5A TO220 Infineon Technologies	6,992	RFQ	Datasheet	CoolMOS™ P7	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	700 V	12.5A (Tc)	10V	360mOhm @ 3A, 10V	3.5V @ 150µA	16.4 nC @ 10 V	±16V	517 pF @ 400 V	-	26.5W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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