FETs, MOSFETs
Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF654BIRF654B - 21A, 250V, 0.14OHM, N- |
447 |
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Datasheet | * | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDPF12N50NZPOWER FIELD-EFFECT TRANSISTOR, 1 |
1,000 |
|
Datasheet | UniFET-II™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11.5A (Tc) | 10V | 520mOhm @ 5.75A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±25V | 1235 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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HUF76132P375A, 30V, 0.016OHM, N-CHANNEL MO |
800 |
|
Datasheet | * | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AM7432N-CTMOSFET N-CH 30V 27A DFN5x6 |
1,000 |
|
Datasheet | - | DFN5x6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 27A (Ta) | 2.5V, 4.5V | 5.9mOhm @ 19.1A, 2.5V | 400mV @ 250µA (Min) | 43 nC @ 4.5 V | ±12V | 5146 pF @ 15 V | - | 5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DFN5x6 |
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BUK769R6-80E,118NEXPERIA BUK769R6-80E - 75A, 80V |
341 |
|
Datasheet | TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 75A (Tc) | 10V | 9.6mOhm @ 20A, 10V | 4V @ 1mA | 59.8 nC @ 10 V | ±20V | 4682 pF @ 25 V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK |
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MFT10N70P56MOSFET - PPAK5X6 100V 70A N-Chan |
100 |
|
Datasheet | - | - | Strip | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AMS441PMOSFET P-CH -40V 50A DFN3X3 |
100 |
|
Datasheet | - | 8-PowerWDFN | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 20A (Ta), 50A (Tc) | 4.5V, 10V | 7.5mOhm @ 10A, 10V | 1V @ 250µA | 70 nC @ 4.5 V | ±20V | 4147 pF @ 15 V | - | 4.6W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-DFN (3.3x3.3) |
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AM70N25-50BMOSFET N-CH 250V 62A TO-263 |
40 |
|
Datasheet | * | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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GPI65007DF56GaNFET N-CH 650V 7A DFN5x6 |
40 |
|
Datasheet | - | - | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 7A | 6V | - | 1.5V @ 3.5mA | 2.1 nC @ 6 V | +7.5V, -12V | 76.1 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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FCH110N65F-F155MOSFET N-CH 650V 35A TO247 |
69 |
|
Datasheet | FRFET®, SuperFET® II | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 110mOhm @ 17.5A, 10V | 5V @ 3.5mA | 145 nC @ 10 V | ±20V | 4895 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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CC-C2-B15-0322SiC Power MOSFET 1200V 12A |
30 |
|
Datasheet | - | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 12A (Ta) | 15V | 135mOhm @ 10A, 15V | 3.2V @ 5mA | 40 nC @ 15 V | +15V, -5V | 1810 pF @ 200 V | - | 100W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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FCH043N60POWER FIELD-EFFECT TRANSISTOR, 7 |
50 |
|
Datasheet | SuperFET® II | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 75A (Tc) | 10V | 43mOhm @ 38A, 10V | 3.5V @ 250µA | 215 nC @ 10 V | ±20V | 12225 pF @ 400 V | - | 592W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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NC1M120C75HTNGSiC MOSFET N 1200V 75mohm 47A 4 |
100 |
|
Datasheet | NC1M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 47A (Tc) | 20V | 75mOhm @ 20A, 20V | 2.8V @ 5mA | - | +20V, -5V | 1450 pF @ 1000 V | - | 288W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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NC1M120C75RRNGSiC MOSFET N 1200V 75mohm 46A 7 |
100 |
|
Datasheet | NC1M | TO-263-8, DPak (7 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 46A (Tc) | 18V | 75mOhm @ 20A, 18V | 2.3V @ 5mA | - | +18V, -5V | 1402 pF @ 1000 V | - | 240W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263-7L |
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IRFF130Power Field-Effect Transistor, 8 |
52 |
|
Datasheet | - | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NC1M120C40GTNGSiC MOSFET N 1200V 40mohm 76A 3 |
100 |
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Datasheet | NC1M | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 76A (Tc) | 20V | 40mOhm @ 35A, 20V | 2.8V @ 10mA | - | +20V, -5V | 2534 pF @ 1000 V | - | 375W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3L |
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NC1M120C40HTNGSiC MOSFET N 1200V 40mohm 75A 4 |
100 |
|
Datasheet | NC1M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 75A (Tc) | 20V | 40mOhm @ 35A, 20V | 2.8V @ 10mA | - | +20V, -5V | 2534 pF @ 1000 V | - | 366W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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NC1M120C35HTNGSIC MOSFET 1200V 35M 75A TO247- |
100 |
|
Datasheet | NC1M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1.2 kV | 75A (Tc) | - | 50mOhm @ 33.3A, 18V | 4.5V @ 15mA | 190 nC @ 18 V | +18V, -5V | 2834 pF @ 1 kV | - | 386W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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NC2M120C20HTNGSIC MOSFET 1200V 20M 126A TO247 |
100 |
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Datasheet | NC2M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1.2 kV | 126A (Tc) | - | 30mOhm @ 63A, 20V | 4.5V @ 20mA | 282 nC @ 20 V | +20V, -5V | 4615 pF @ 1 kV | - | 625W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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AMTP65H150G4LSGBGAN FET N-CH 650V 13A DFN8X8 |
35 |
|
Datasheet | - | 4-PowerTSFN | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 13A (Tc) | 10V | 180mOhm @ 10A, 10V | 1V @ 250µA | 8.8 nC @ 6 V | ±18V | 760 pF @ 400 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-DFN (8x8) |
Frequently Asked Questions
What are FETs, MOSFETs components used for?
FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right FETs, MOSFETs part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
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Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
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