FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
AS2M040120P N-CHANNEL SILICON CARBIDE POWER ANBON SEMICONDUCTOR (INT'L) LIMITED	50	RFQ	Datasheet	-	TO-247-3	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	60A (Tc)	20V	55mOhm @ 40A, 20V	4V @ 10mA	142 nC @ 20 V	+25V, -10V	2946 pF @ 1000 V	-	330W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
SCT20N120AG SICFET N-CH 1200V 20A HIP247 STMicroelectronics	43	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	20A (Tc)	20V	239mOhm @ 10A, 20V	3.5V @ 1mA	45 nC @ 20 V	+25V, -10V	650 pF @ 400 V	-	153W (Tc)	-55°C ~ 200°C (TJ)	Automotive	AEC-Q101	Through Hole	HiP247™
HCT7000M MOSFET N-CH 60V 200MA 3SMD TT Electronics/Optek Technology	2,430	RFQ	Datasheet	-	3-SMD, No Lead	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Ta)	10V	5Ohm @ 500mA, 10V	3V @ 1mA	-	±40V	60 pF @ 25 V	-	300mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	3-SMD
IXFX64N60Q3 MOSFET N-CH 600V 64A PLUS247-3 IXYS	17	RFQ	Datasheet	HiPerFET™	TO-247-3 Variant	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	64A (Tc)	10V	95mOhm @ 32A, 10V	6.5V @ 4mA	190 nC @ 10 V	±30V	9930 pF @ 25 V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3
APT40N60JCU2 MOSFET N-CH 600V 40A SOT227 Microchip Technology	28	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	40A (Tc)	10V	70mOhm @ 20A, 10V	3.9V @ 1mA	259 nC @ 10 V	±20V	7015 pF @ 25 V	-	290W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227
GPI65060DFC GaNFET N-CH 650V 60A DFN8x8 cu GaNPower	91	RFQ	Datasheet	-	8-DFN	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	60A	6V	30mOhm @ 6A, 12V	1.2V @ 3.5mA	16 nC @ 6 V	+7.5V, -12V	420 pF @ 400 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (8x8)
AS1M025120T N-CHANNEL SILICON CARBIDE POWER ANBON SEMICONDUCTOR (INT'L) LIMITED	13	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	65A (Tc)	20V	34mOhm @ 50A, 20V	4V @ 15mA	195 nC @ 20 V	+25V, -10V	4200 pF @ 1000 V	-	370W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4
APT77N60JC3 MOSFET N-CH 600V 77A ISOTOP Microchip Technology	83	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	77A (Tc)	10V	35mOhm @ 60A, 10V	3.9V @ 5.4mA	640 nC @ 10 V	±20V	13600 pF @ 25 V	-	568W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	ISOTOP®
IXFZ520N075T2 MOSFET N-CH 75V 465A DE475 IXYS	60	RFQ	Datasheet	HiPerFET™, TrenchT2™	6-SMD, Flat Leads	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	465A (Tc)	10V	1.3mOhm @ 100A, 10V	4V @ 8mA	545 nC @ 10 V	±20V	41000 pF @ 25 V	-	600W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	DE475
APT40M35JVR MOSFET N-CH 400V 93A SOT227 Microchip Technology	2	RFQ	Datasheet	POWER MOS V®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	93A (Tc)	10V	35mOhm @ 46.5A, 10V	4V @ 5mA	1065 nC @ 10 V	±30V	20160 pF @ 25 V	-	700W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227 (ISOTOP®)
APTML100U60R020T1AG MOSFET N-CH 1000V 20A SP1 Microchip Technology	12	RFQ	Datasheet	-	SP1	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	20A (Tc)	10V	720mOhm @ 10A, 10V	4V @ 2.5mA	-	±30V	6000 pF @ 25 V	-	520W (Tc)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	SP1
VMO650-01F MOSFET N-CH 100V 690A Y3-DCB IXYS	2	RFQ	Datasheet	HiPerFET™	Y3-DCB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	690A (Tc)	10V	1.8mOhm @ 500mA, 10V	6V @ 130mA	2300 nC @ 10 V	±20V	59000 pF @ 25 V	-	2500W (Tc)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Y3-DCB
STDLED656 MOSFET N-CH 650V 6A DPAK STMicroelectronics	969	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	6A (Tc)	10V	1.3Ohm @ 2.7A, 10V	4.5V @ 50µA	34 nC @ 10 V	±30V	895 pF @ 100 V	-	70W (Tc)	150°C (TJ)	-	-	Surface Mount	DPAK
AM2341P-CT MOSFET P-CH -40V 3A SOT-23 Analog Power Inc.	700	RFQ	Datasheet	-	SOT-23	Strip	Active	P-Channel	MOSFET (Metal Oxide)	40 V	3A (Ta)	4.5V, 10V	140mOhm @ 2.1A, 4.5V	1V @ 250µA	5.8 nC @ 4.5 V	±20V	384 pF @ 15 V	-	1.3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23
G400P06T MOSFET P-CH 60V 32A TO-220 Goford Semiconductor	1,000	RFQ	Datasheet	TrenchFET®	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	-	32A (Tc)	10V	40mOhm @ 12A, 10V	3V @ 250µA	-	±20V	-	-	110W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
G18N20T MOSFET N-CH 200V 18A 110W 190m(m Goford Semiconductor	1,000	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	190mOhm @ 8A, 10V	4V @ 250µA	31 nC @ 5 V	±30V	1120 pF @ 100 V	-	110W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
GT700P08T MOSFET P-CH 80V 25A TO-220 Goford Semiconductor	1,000	RFQ	Datasheet	SGT	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	-	25A (Tc)	10V	72mOhm @ 2A, 10V	3.5V @ 250µA	-	±20V	-	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
18N20J MOSFET N-CH 200V 18A TO-251 Goford Semiconductor	1,000	RFQ	Datasheet	TrenchFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	-	18A (Tc)	10V	160mOhm @ 9A, 10V	3V @ 250µA	-	±30V	-	-	65.8W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251
GT130N10F MOSFET N-CH 100V 45A 41.7W 12m( Goford Semiconductor	1,000	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	45A (Tc)	10V	12mOhm @ 20A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	1215 pF @ 50 V	-	41.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F
GT180N12M MOSFET N-CH 120V 55A 96W 17m(max Goford Semiconductor	800	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	120 V	55A (Tc)	10V	17mOhm @ 20A, 10V	4.5V @ 250µA	22 nC @ 10 V	±20V	1635 pF @ 60 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.