FETs, MOSFETs
Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ASZM040120TN-CHANNEL SILICON CARBIDE POWER |
30 |
|
Datasheet | - | TO-247-4 | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 68A (Tc) | 18V, 20V | 32mOhm @ 40A, 20V | 3.6V @ 9.5mA | 87 nC @ 18 V | +25V, -10V | 2820 pF @ 1000 V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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TPH3208LDGGANFET N-CH 650V 20A 3PQFN |
9 |
|
Datasheet | - | 3-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14 nC @ 8 V | ±18V | 760 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 3-PQFN (8x8) |
|
R6030JNZC8MOSFET N-CH 600V 30A TO3PF |
29 |
|
Datasheet | - | TO-3P-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 15V | 143mOhm @ 15A, 15V | 7V @ 5.5mA | 74 nC @ 15 V | ±30V | 2500 pF @ 100 V | - | 93W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PF |
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STWA57N65M5MOSFET N-CH 650V 42A TO247 |
90 |
|
Datasheet | MDmesh™ V | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 42A (Tc) | 10V | 63mOhm @ 21A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±25V | 4200 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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GC041N65QFMOSFET N-CH 650V 70A TO-247 |
26 |
|
Datasheet | SuperJunction | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 70A (Tc) | 10V | 43mOhm @ 20A, 10V | 5V @ 250µA | 160 nC @ 10 V | ±30V | 7668 pF @ 400 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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AS1M080120PN-CHANNEL SILICON CARBIDE POWER |
78 |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 20V | 98mOhm @ 20A, 20V | 4V @ 5mA | 79 nC @ 20 V | +25V, -10V | 1475 pF @ 1000 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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APT43M60LMOSFET N-CH 600V 45A TO264 |
20 |
|
Datasheet | POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 45A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215 nC @ 10 V | ±30V | 8590 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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STW62NM60NMOSFET N-CH 600V 65A TO247 |
10 |
|
Datasheet | MDmesh™ II | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 65A (Tc) | 10V | 49mOhm @ 32.5A, 10V | 4V @ 250µA | 174 nC @ 10 V | ±25V | 5800 pF @ 100 V | - | 450W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STW57N65M5-4MOSFET N-CH 650V 42A TO247-4L |
33 |
|
Datasheet | MDmesh™ V | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 42A (Tc) | 10V | 63mOhm @ 21A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±25V | 4200 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-4L |
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APT34F60BMOSFET N-CH 600V 36A TO247 |
9 |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 210mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | ±30V | 6640 pF @ 25 V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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FCHD040N65S3-F155MOSFET N-CH 650V 65A TO247 |
34 |
|
Datasheet | SuperFET® III | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 4.5V @ 1.7mA | 136 nC @ 10 V | ±30V | 4740 pF @ 400 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STWA63N65DM2MOSFET N-CH 650V 60A TO247 |
37 |
|
Datasheet | MDmesh™ DM2 | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 10V | 50mOhm @ 30A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±25V | 5500 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 Long Leads |
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APT34F60SMOSFET N-CH 600V 36A D3PAK |
86 |
|
Datasheet | POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 190mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | ±30V | 6640 pF @ 25 V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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H5N5016PL-EN-CHANNEL POWER MOSFET |
42 |
|
Datasheet | * | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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GPI65030DFNGANFET N-CH 650V 30A DFN8X8 |
100 |
|
Datasheet | - | Die | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 30A | 6V | - | 1.2V @ 3.5mA | 5.8 nC @ 6 V | +7.5V, -12V | 241 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
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GPI65030TO5LGaNFET N-CH 650V 30A TO263-5L |
26 |
|
Datasheet | - | - | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 30A | 6V | - | 1.4V @ 3.5mA | 5.8 nC @ 6 V | +7.5V, -12V | 241 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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APT75M50LMOSFET N-CH 500V 75A TO264 |
9 |
|
Datasheet | POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 75A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | ±30V | 11600 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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IV1Q12160T4SIC MOSFET, 1200V 160MOHM, TO-24 |
96 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 20V | 195mOhm @ 10A, 20V | 2.9V @ 1.9mA | 43 nC @ 20 V | +20V, -5V | 885 pF @ 800 V | - | 138W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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IXFH12N100QMOSFET N-CH 1000V 12A TO247AD |
54 |
|
Datasheet | HiPerFET™, Q Class | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 12A (Tc) | 10V | 1.05Ohm @ 6A, 10V | 5.5V @ 4mA | 90 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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APT6017LFLLGMOSFET N-CH 600V 35A TO264 |
15 |
|
Datasheet | POWER MOS 7® | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 170mOhm @ 17.5A, 10V | 5V @ 2.5mA | 100 nC @ 10 V | ±30V | 4500 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
Frequently Asked Questions
What are FETs, MOSFETs components used for?
FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right FETs, MOSFETs part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
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