FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
STW26NM60N N-channel 600 V, 0.135 Ohm typ., STMicroelectronics	68	RFQ	Datasheet	MDmesh™ II	TO-247-3	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	165mOhm @ 10A, 10V	4V @ 250µA	60 nC @ 10 V	±30V	1800 pF @ 50 V	-	140W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247-3
GS61008T-MR GS61008T-MR Infineon Technologies Canada Inc.	96	RFQ	Datasheet	-	4-SMD, No Lead	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	90A (Tc)	6V	9.5mOhm @ 27A, 6V	1.3V @ 7mA	12 nC @ 6 V	+7V, -10V	590 pF @ 50 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	-
IXFH50N60P3 MOSFET N-CH 600V 50A TO247AD Littelfuse Inc.	66	RFQ	Datasheet	HiPerFET™, Polar3™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	50A (Tc)	10V	145mOhm @ 500mA, 10V	5V @ 4mA	94 nC @ 10 V	±30V	6300 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
IXFH150N25X3 MOSFET N-CH 250V 150A TO247 Littelfuse Inc.	48	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	150A (Tc)	10V	9mOhm @ 75A, 10V	4.5V @ 4mA	154 nC @ 10 V	±20V	10400 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
APT30M85BVRG MOSFET N-CH 300V 40A TO247 Microchip Technology	80	RFQ	Datasheet	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	40A (Tc)	10V	85mOhm @ 500mA, 10V	4V @ 1mA	195 nC @ 10 V	±30V	4950 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
TK040N65Z,S1F MOSFET N-CH 650V 57A TO247 Toshiba Semiconductor and Storage	76	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	57A (Ta)	10V	40mOhm @ 28.5A, 10V	4V @ 2.85mA	105 nC @ 10 V	±30V	6250 pF @ 300 V	-	360W (Tc)	150°C	-	-	Through Hole	TO-247
TW140N120C,S1F G3 1200V SIC-MOSFET TO-247 140M Toshiba Semiconductor and Storage	70	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	20A (Tc)	18V	182mOhm @ 10A, 18V	5V @ 1mA	24 nC @ 18 V	+25V, -10V	691 pF @ 800 V	-	107W (Tc)	175°C	-	-	Through Hole	TO-247
TK042N65Z5,S1F(S 650V DTMOS6 HSD 42MOHM TO-247 Toshiba Semiconductor and Storage	86	RFQ	Datasheet	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	55A (Ta)	10V	42mOhm @ 27.5A, 10V	4.5V @ 2.85mA	105 nC @ 10 V	±30V	6280 pF @ 300 V	-	360W (Tc)	150°C	-	-	Through Hole	TO-247
STW26NM50 MOSFET N-CH 500V 30A TO247-3 STMicroelectronics	57	RFQ	Datasheet	MDmesh™	TO-247-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	500 V	30A (Tc)	10V	120mOhm @ 13A, 10V	5V @ 250µA	106 nC @ 10 V	±30V	3000 pF @ 25 V	-	313W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247-3
APT1001RBVRG MOSFET N-CH 1000V 11A TO247 Microchip Technology	37	RFQ	Datasheet	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	11A (Tc)	-	1Ohm @ 500mA, 10V	4V @ 1mA	225 nC @ 10 V	-	3660 pF @ 25 V	-	-	-	-	-	Through Hole	TO-247 [B]
IXFT80N65X2HV MOSFET N-CH 650V 80A TO268HV Littelfuse Inc.	78	RFQ	Datasheet	HiPerFET™, Ultra X2	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	80A (Tc)	10V	-	5V @ 4mA	140 nC @ 10 V	±30V	8300 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268HV (IXFT)
APT6025BVRG MOSFET N-CH 600V 25A TO247 Microchip Technology	71	RFQ	Datasheet	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	25A (Tc)	-	250mOhm @ 500mA, 10V	4V @ 1mA	275 nC @ 10 V	-	5160 pF @ 25 V	-	-	-	-	-	Through Hole	TO-247 [B]
IXKH47N60C MOSFET N-CH 600V 47A TO247AD IXYS	30	RFQ	Datasheet	CoolMOS™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	47A (Tc)	10V	70mOhm @ 30A, 10V	4V @ 2mA	650 nC @ 10 V	±20V	-	-	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD
IMLT65R020M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	39	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTT110N10L2 MOSFET N-CH 100V 110A TO268 IXYS	46	RFQ	Datasheet	Linear L2™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	110A (Tc)	10V	18mOhm @ 55A, 10V	4.5V @ 250µA	260 nC @ 10 V	±20V	10500 pF @ 25 V	-	600W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA
APT37M100L MOSFET N-CH 1000V 37A TO264 Microchip Technology	25	RFQ	Datasheet	-	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	37A (Tc)	10V	330mOhm @ 18A, 10V	5V @ 2.5mA	305 nC @ 10 V	±30V	9835 pF @ 25 V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264
TW045Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 4 Toshiba Semiconductor and Storage	50	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40A (Tc)	18V	62mOhm @ 20A, 18V	5V @ 6.7mA	57 nC @ 18 V	+25V, -10V	1969 pF @ 800 V	-	182W (Tc)	175°C	-	-	Through Hole	TO-247-4L(X)
AIMW120R045M1XKSA1 SICFET N-CH 1200V 52A TO247-3 Infineon Technologies	35	RFQ	Datasheet	CoolSiC™	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	52A (Tc)	-	59mOhm @ 20A, 15V	5.7V @ 10mA	57 nC @ 15 V	+20V, -7V	2130 pF @ 800 V	-	228W (Tc)	-40°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-3
TW045N120C,S1F G3 1200V SIC-MOSFET TO-247 45MO Toshiba Semiconductor and Storage	71	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40A (Tc)	18V	59mOhm @ 20A, 18V	5V @ 6.7mA	57 nC @ 18 V	+25V, -10V	1969 pF @ 800 V	-	182W (Tc)	175°C	-	-	Through Hole	TO-247
IPDQ60R007CM8XTMA1 IPDQ60R007CM8XTMA1 Infineon Technologies	15	RFQ	Datasheet	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	288A (Tc)	10V	7mOhm @ 100A, 10V	4.7V @ 3.24mA	370 nC @ 10 V	±20V	16385 pF @ 400 V	-	1.249kW (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.