JIEXIN Electronics — Your one-stop global supplier of chips and electronic components.
ELECTRONIC COMPONENTS

FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IXTH1N200P3 IXYS

IXTH1N200P3

MOSFET N-CH 2000V 1A TO247

IXYS

31
Datasheet Polar P3™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 2000 V 1A (Tc) 10V 40Ohm @ 500mA, 10V 4V @ 250µA 23.5 nC @ 10 V ±20V 646 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
MSC035SMA070B Microchip Technology

MSC035SMA070B

MOSFET N-CH 700V TO247

Microchip Technology

85
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 700 V 77A (Tc) 20V 44mOhm @ 30A, 20V 2.7V @ 2mA 99 nC @ 20 V +25V, -10V 2010 pF @ 700 V - 283W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
IXTA02N250HV Littelfuse Inc.

IXTA02N250HV

MOSFET N-CH 2500V 200MA TO263AB

Littelfuse Inc.

44
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 2500 V 200mA (Tc) 10V 450Ohm @ 50mA, 10V 4.5V @ 250µA 7.4 nC @ 10 V ±20V 116 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA
IXFH12N100F Littelfuse Inc.

IXFH12N100F

MOSFET N-CH 1000V 12A TO247AD

Littelfuse Inc.

24
Datasheet HiPerFET™, F Class TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 12A (Tc) 10V 1.05Ohm @ 6A, 10V 5.5V @ 4mA 77 nC @ 10 V ±20V 2700 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
IMZ120R030M1HXKSA1 Infineon Technologies

IMZ120R030M1HXKSA1

SICFET N-CH 1.2KV 56A TO247-4

Infineon Technologies

88
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 56A (Tc) 15V, 18V 40mOhm @ 25A, 18V 5.7V @ 10mA 63 nC @ 18 V +23V, -7V 2120 pF @ 800 V - 227W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-1
IXFN140N30P Littelfuse Inc.

IXFN140N30P

MOSFET N-CH 300V 110A SOT-227B

Littelfuse Inc.

85
Datasheet HiPerFET™, Polar SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 300 V 110A (Tc) 10V 24mOhm @ 70A, 10V 5V @ 8mA 185 nC @ 10 V ±20V 14800 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
IMBG120R012M2HXTMA1 Infineon Technologies

IMBG120R012M2HXTMA1

SIC DISCRETE

Infineon Technologies

31
Datasheet CoolSiC™ Gen 2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 144A (Tc) 15V, 18V 12.2mOhm @ 56.7A, 18V 5.1V @ 17.8mA 124 nC @ 18 V +23V, -10V 4050 pF @ 800 V - 600W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-12
VS-FC420SA15 Vishay General Semiconductor - Diodes Division

VS-FC420SA15

MOSFET N-CH 150V 400A SOT227

Vishay General Semiconductor - Diodes Division

54
Datasheet - SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 150 V 400A (Tc) 10V 2.75mOhm @ 200A, 10V 5.4V @ 1mA 250 nC @ 10 V ±20V 13700 pF @ 25 V - 909W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227
UJ4SC075009B7S Qorvo

UJ4SC075009B7S

750V/9MOHM, N-OFF SIC STACK CASC

Qorvo

48
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Cascode SiCJFET) 750 V 106A (Tc) 12V 11.5mOhm @ 70A, 12V 5.5V @ 10mA 75 nC @ 15 V ±20V 3340 pF @ 400 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK-7
IXFK240N25X3 Littelfuse Inc.

IXFK240N25X3

MOSFET N-CH 250V 240A TO264

Littelfuse Inc.

92
Datasheet HiPerFET™, Ultra X3 TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 250 V 240A (Tc) 10V 5mOhm @ 120A, 10V 4.5V @ 8mA 345 nC @ 10 V ±20V 23800 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264
IXTH24N50L Littelfuse Inc.

IXTH24N50L

MOSFET N-CH 500V 24A TO247

Littelfuse Inc.

68
Datasheet Linear TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 20V 300mOhm @ 500mA, 20V 5V @ 250µA 160 nC @ 20 V ±30V 2500 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
IXTX200N10L2 Littelfuse Inc.

IXTX200N10L2

MOSFET N-CH 100V 200A PLUS247-3

Littelfuse Inc.

6
Datasheet Linear L2™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Tc) 10V 11mOhm @ 100A, 10V 4.5V @ 3mA 540 nC @ 10 V ±20V 23000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
NVH4L018N075SC1 onsemi

NVH4L018N075SC1

SIC MOS TO247-4L 750V

onsemi

62
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 140A (Tc) 15V, 18V 18mOhm @ 66A, 18V 4.3V @ 22mA 262 nC @ 18 V +22V, -8V 5010 pF @ 375 V - 500W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
MSC035SMA170B Microchip Technology

MSC035SMA170B

MOSFET SIC 1700 V 45 MOHM TO-247

Microchip Technology

37
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1700 V 68A (Tc) 20V 45mOhm @ 30A, 20V 3.25V @ 2.5mA (Typ) 178 nC @ 20 V +23V, -10V 3300 pF @ 1000 V - 370W (Tc) -60°C ~ 175°C (TJ) - - Through Hole TO-247-3
MSC040SMA120J Microchip Technology

MSC040SMA120J

SICFET N-CH 1200V 53A SOT227

Microchip Technology

50
Datasheet - SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 53A (Tc) 20V 50mOhm @ 40A, 20V 2.8V @ 1mA 137 nC @ 20 V +25V, -10V 1990 pF @ 1000 V - 208W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
IXFN300N10P Littelfuse Inc.

IXFN300N10P

MOSFET N-CH 100V 295A SOT227B

Littelfuse Inc.

70
Datasheet HiPerFET™, Polar SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 100 V 295A (Tc) 10V 5.5mOhm @ 50A, 10V 5V @ 8mA 279 nC @ 10 V ±20V 23000 pF @ 25 V - 1070W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227B
MSC035SMA170B4 Microchip Technology

MSC035SMA170B4

MOSFET SIC 1700V 35 MOHM TO-247-

Microchip Technology

90
Datasheet - TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 1700 V 68A (Tc) 20V 45mOhm @ 30A, 20V 3.25V @ 2.5mA (Typ) 178 nC @ 20 V +23V, -10V 3300 pF @ 1000 V - 370W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
APT50M65JFLL Microchip Technology

APT50M65JFLL

MOSFET N-CH 500V 58A ISOTOP

Microchip Technology

53
Datasheet POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 10V 65mOhm @ 29A, 10V 5V @ 2.5mA 141 nC @ 10 V ±30V 7010 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
AIMBG120R010M1XTMA1 Infineon Technologies

AIMBG120R010M1XTMA1

SIC_DISCRETE

Infineon Technologies

13
Datasheet CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 187A - - - - - - - - -55°C ~ 175°C - - Surface Mount PG-TO263-7-12
IMW120R007M1HXKSA1 Infineon Technologies

IMW120R007M1HXKSA1

SIC DISCRETE

Infineon Technologies

88
Datasheet CoolSiC™ TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 225A (Tc) 15V, 18V 9.9mOhm @ 108A, 18V 5.2V @ 47mA 289 nC @ 18 V +20V, -5V 9170 pF @ 800 V - 750W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3
Total 36322 Record«Prev1... 716717718719720721722723...1817Next»
FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

BOM & COMPONENT SOURCING

Need Pricing or Stock Support for FETs, MOSFETs?

Submit your required part numbers, manufacturers and quantities to receive stock availability, pricing, lead-time and sourcing support. Our team assists with active components, shortage parts, obsolete models and one-stop BOM procurement.

BOM BOM Phone +86-138 0989 9356 Email info@jx-icsource.com Cart Shopping Cart Account My Account Back To Top