FETs, MOSFETs
Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MCTK075N60FH-TPN-CHANNEL MOSFET,TOLL-8L-KS |
4,000 |
|
Datasheet | - | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19.5A (Tc) | 10V | 75mOhm @ 20A, 10V | 5V @ 2.8mA | 81 nC @ 10 V | ±30V | 3202 pF @ 100 V | - | 88W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TOLL-8L-KS |
|
IPT65R080CFD7XTMA1HIGH POWER_NEW |
2,000 |
|
Datasheet | - | 8-PowerSFN | Tape & Reel (TR) | Active | - | - | 650 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-3 |
|
MCB220N15Y-TPMOSFET |
7,990 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 220A (Tc) | 6V, 10V | 6.5mOhm @ 20A, 10V | 4V @ 250µA | 155 nC @ 10 V | ±20V | 9177 pF @ 75 V | - | 312.5W (Tj) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
RX3P07CBHC16NCH 100V 70A, TO-220AB, POWER M |
992 |
|
Datasheet | - | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 6V, 10V | 5.2mOhm @ 70A, 10V | 4V @ 1mA | 73 nC @ 10 V | ±20V | 4650 pF @ 50 V | - | 135W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
IPTC026N12NM6ATMA1TRENCH >=100V |
1,580 |
|
Datasheet | OptiMOS™ 6 | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 26A (Ta), 222A (Tc) | 8V, 10V | 2.6mOhm @ 115A, 10V | 3.6V @ 169µA | 88 nC @ 10 V | ±20V | 6500 pF @ 60 V | - | 3.8W (Ta), 278W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-2 |
|
ISC130N20NM6ATMA1MOSFET |
4,434 |
|
Datasheet | OptiMOS™ 6 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9.8A (Ta), 88A (Tc) | 10V, 15V | 11.7mOhm @ 50A, 15V | 4.5V @ 135µA | 58 nC @ 10 V | ±20V | 3900 pF @ 100 V | - | 3W (Ta), 242W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSON-8-3 |
|
G2R1000MT17J-TR1700V 1000M TO-263-7 G2R SIC MOS |
606 |
|
Datasheet | G2R™, LoRing™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 5A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 4V @ 2mA | 11 nC @ 20 V | +20V, -5V | 139 pF @ 1000 V | - | 44W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
IXTP300N04T2MOSFET N-CH 40V 300A TO220AB |
463 |
|
Datasheet | TrenchT2™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 300A (Tc) | 10V | 2.5mOhm @ 500mA, 10V | 4V @ 250µA | 145 nC @ 10 V | ±20V | 10700 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
IPT023N10NM5LF2ATMA1IPT023N10NM5LF2ATMA1 |
1,980 |
|
Datasheet | OptiMOS™ 5 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 27A (Ta), 243A (Tc) | 10V, 15V | 2.1mOhm @ 100A, 15V | 3.9V @ 193µA | 144 nC @ 10 V | ±20V | 12000 pF @ 50 V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-1 |
|
IPP65R110CFDXKSA2MOSFET N-CH 650V 31.2A TO220-3 |
436 |
|
Datasheet | CoolMOS™ CFD2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118 nC @ 10 V | ±20V | 3240 pF @ 100 V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
CDF56G6517N TR13 PBFREE650V, 17A, N-CHANNEL GAN FET IN |
2,498 |
|
Datasheet | * | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | - | 650 V | 17A (Tc) | - | - | - | - | - | - | - | 1.1W (Ta) | - | - | - | Surface Mount, Wettable Flank | 8-DFN (5x6) |
|
S2M0120120KMOSFET SILICON CARBIDE SIC 1200V |
295 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 21A (Tc) | 20V | 150mOhm @ 13.3A, 20V | 4V @ 3.3mA | 29.6 nC @ 20 V | +20V, -5V | 652 pF @ 1000 V | - | 156W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
PJMF105N60FRC_T0_00601600V/ 105M / 35A/ SJ MOSFET WITH |
2,000 |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
PJMP105N60FRC_T0_00601600V/ 105M / 35A/ SJ MOSFET WITH |
2,000 |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
R6027YNXC7GNCH 600V 14A, TO-220FM, POWER MO |
1,000 |
|
Datasheet | - | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 10V, 12V | 135mOhm @ 7A, 12V | 6V @ 2mA | 40 nC @ 10 V | ±30V | 1670 pF @ 100 V | - | 70W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
|
IPB90R340C3ATMA2MOSFET N-CH 900V 15A TO263-3 |
1,783 |
|
Datasheet | CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94 nC @ 10 V | ±20V | 2400 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
IPDQ65R080CFD7XTMA1HIGH POWER_NEW |
750 |
|
Datasheet | CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 36A (Tc) | 10V | 80mOhm @ 12.5A, 10V | 4.5V @ 630µA | 50 nC @ 10 V | ±20V | 2513 pF @ 400 V | - | 223W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
|
S2M0160120JMOSFET SILICON CARBIDE SIC 1200V |
300 |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 16A (Tc) | 20V | 196mOhm @ 10A, 20V | 4V @ 2.5mA | 26.5 nC @ 20 V | +20V, -5V | 513 pF @ 1000 V | - | 122W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
IAUTN06S5N008GATMA1MOSFET_)40V 60V) |
1,690 |
|
Datasheet | - | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SUM70042M-GE3N-CHANNEL 100 V (D-S) MOSFET D2P |
780 |
|
Datasheet | TrenchFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 150A (Tc) | 7.5V, 10V | 3.83mOhm @ 20A, 10V | 3.8V @ 250µA | 126 nC @ 10 V | ±20V | 6750 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
Frequently Asked Questions
What are FETs, MOSFETs components used for?
FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right FETs, MOSFETs part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
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