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FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IQD063N15NM5ATMA1 Infineon Technologies

IQD063N15NM5ATMA1

TRENCH >=100V

Infineon Technologies

4,872
Datasheet OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 14.1A (Ta), 148A (Tc) 8V, 10V 6.32mOhm @ 50A, 10V 4.6V @ 159µA 60 nC @ 10 V ±20V 4700 pF @ 75 V - 2.5W (Ta), 278W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TSON-8-9
G3R350MT12J-TR GeneSiC Semiconductor

G3R350MT12J-TR

1200V 350M TO-263-7 G3R SIC MOSF

GeneSiC Semiconductor

623
Datasheet G3R™, LoRing™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 10A (Tc) 15V, 18V 395mOhm @ 4A, 18V 2.7V @ 2mA 10 nC @ 15 V +22V, -10V 331 pF @ 800 V - 64W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
RBA300N10EANS-3UA02#GB0 Renesas Electronics Corporation

RBA300N10EANS-3UA02#GB0

100V-300A-N-CHANNEL MOSFET FOR H

Renesas Electronics Corporation

1,955
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
RJ1P07CBHTL1 Rohm Semiconductor

RJ1P07CBHTL1

NCH 100V 70A, TO-263AB, POWER M

Rohm Semiconductor

800
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 6V, 10V 5.1mOhm @ 70A, 10V 4V @ 1mA 73 nC @ 10 V ±20V 4650 pF @ 50 V - 135W (Tc) 150°C (TJ) - - Surface Mount TO-263AB
NVMFS6H800NLWFT1G onsemi

NVMFS6H800NLWFT1G

MOSFET N-CH 80V 30A/224A 5DFN

onsemi

1,495
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Ta), 224A (Tc) 4.5V, 10V 1.9mOhm @ 50A, 10V 2V @ 330µA 112 nC @ 10 V ±20V 6900 pF @ 40 V - 3.9W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
NVMFS5C410NWFAFT1G onsemi

NVMFS5C410NWFAFT1G

MOSFET N-CH 40V 46A/300A 5DFN

onsemi

1,355
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 300A (Tc) 10V 0.92mOhm @ 50A, 10V 3.5V @ 250µA 86 nC @ 10 V ±20V 6100 pF @ 25 V - 3.9W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFN (5x6) (8-SOFL)
IPZ60R099C7XKSA1 Infineon Technologies

IPZ60R099C7XKSA1

MOSFET N-CH 600V 22A TO247-4

Infineon Technologies

8,125
Datasheet CoolMOS™ C7 TO-247-4 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 99mOhm @ 9.7A, 10V 4V @ 490µA 42 nC @ 10 V ±20V 1819 pF @ 400 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4
NVB099N65S3 onsemi

NVB099N65S3

SF3 650V EASY 99MOHM D2PAK AUTO

onsemi

3,141
Datasheet SuperFET® III TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 99mOhm @ 15A, 10V 4.5V @ 740µA 61 nC @ 10 V ±30V 2480 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
PJMP125N60FRC_T0_00601 Panjit International Inc.

PJMP125N60FRC_T0_00601

600V/ 125M / 30A/ SJ MOSFET WITH

Panjit International Inc.

2,000
Datasheet - - Tube Active - - - - - - - - - - - - - - - - -
IPW65R150CFDAFKSA1 Infineon Technologies

IPW65R150CFDAFKSA1

MOSFET N-CH 650V 22.4A TO247-3

Infineon Technologies

426
Datasheet CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-3
SIHA25N60EFL-GE3 Vishay Siliconix

SIHA25N60EFL-GE3

N-CHANNEL 600V

Vishay Siliconix

987
Datasheet E TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 146mOhm @ 12.5A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 2274 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
SIHP25N60EFL-BE3 Vishay Siliconix

SIHP25N60EFL-BE3

N-CHANNEL 600V

Vishay Siliconix

897
Datasheet E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 146mOhm @ 12.5A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 2274 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHP125N60EF-GE3 Vishay Siliconix

SIHP125N60EF-GE3

MOSFET N-CH 600V 25A TO220AB

Vishay Siliconix

976
Datasheet EF TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 47 nC @ 10 V ±30V 1533 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
AUIRF2804STRL7P Infineon Technologies

AUIRF2804STRL7P

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies

3,076
Datasheet HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
PJMF125N60FRC_T0_00601 Panjit International Inc.

PJMF125N60FRC_T0_00601

600V/ 125M / 30A/ SJ MOSFET WITH

Panjit International Inc.

2,000
Datasheet - - Tube Active - - - - - - - - - - - - - - - - -
IXFA36N30P3 Littelfuse Inc.

IXFA36N30P3

MOSFET N-CH 300V 36A TO263AA

Littelfuse Inc.

164
Datasheet HiPerFET™, Polar3™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 300 V 36A (Tc) 10V 110mOhm @ 18A, 10V 4.5V @ 250µA 30 nC @ 10 V ±20V 2040 pF @ 25 V - 347W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA (IXFA)
IPBE65R115CFD7AATMA1 Infineon Technologies

IPBE65R115CFD7AATMA1

AUTOMOTIVE_COOLMOS PG-TO263-7

Infineon Technologies

976
Datasheet CoolMOS™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 115mOhm @ 9.7A, 10V 4.5V @ 490µA 41 nC @ 10 V ±20V 1950 pF @ 400 V - 114W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TO263-7-11
IPI041N12N3GAKSA1 Infineon Technologies

IPI041N12N3GAKSA1

MOSFET N-CH 120V 120A TO262-3

Infineon Technologies

464
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 120 V 120A (Tc) 10V 4.1mOhm @ 100A, 10V 4V @ 270µA 211 nC @ 10 V ±20V 13800 pF @ 60 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
TK25V60X5,LQ Toshiba Semiconductor and Storage

TK25V60X5,LQ

PB-F POWER MOSFET TRANSISTOR DTM

Toshiba Semiconductor and Storage

2,488
Datasheet DTMOSIV 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 150mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
ISC037N13NM6ATMA1 Infineon Technologies

ISC037N13NM6ATMA1

TRENCH >=100V

Infineon Technologies

4,654
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

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Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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