FETs, MOSFETs
Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.
If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF720PBF-BE3MOSFET N-CH 400V 3.3A TO220AB |
6,926 |
|
Datasheet | - | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.3A (Tc) | - | 1.8Ohm @ 2A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 410 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
SIHB22N60E-GE3MOSFET N-CH 600V 21A D2PAK |
3,130 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1920 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SIHG25N50E-GE3MOSFET N-CH 500V 26A TO247AC |
4,240 |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1980 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SIR112DP-T1-RE3MOSFET N-CH 40V 37.6A/133A PPAK |
9,917 |
|
Datasheet | TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 37.6A (Ta), 133A (Tc) | 4.5V, 10V | 1.96mOhm @ 10A, 10V | 2.4V @ 250µA | 89 nC @ 10 V | +20V, -16V | 4270 pF @ 20 V | - | 5W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
|
SIHG22N60AE-GE3MOSFET N-CH 600V 20A TO247AC |
7,405 |
|
Datasheet | E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 96 nC @ 10 V | ±30V | 1451 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
|
SIRA52DP-T1-GE3MOSFET N-CH 40V 60A PPAK SO-8 |
5,275 |
|
Datasheet | TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 1.7mOhm @ 15A, 10V | 2.4V @ 250µA | 150 nC @ 10 V | +20V, -16V | 7150 pF @ 20 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIHD2N80E-GE3MOSFET N-CH 800V 2.8A DPAK |
1 |
|
Datasheet | E | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2.8A (Tc) | 10V | 2.75Ohm @ 1A, 10V | 4V @ 250µA | 19.6 nC @ 10 V | ±30V | 315 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
SIHU6N80AE-GE3MOSFET N-CH 800V 5A TO251AA |
3,226 |
|
Datasheet | E | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5A (Tc) | 10V | 950mOhm @ 2A, 10V | 4V @ 250µA | 22.5 nC @ 10 V | ±30V | 422 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
|
|
IRFBC40SPBFMOSFET N-CH 600V 6.2A D2PAK |
7,846 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SQJA42EP-T1_GE3MOSFET N-CH 40V 20A PPAK SO-8 |
7,919 |
|
Datasheet | TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 20A (Tc) | 4.5V, 10V | 9.4mOhm @ 6A, 10V | 2.3V @ 250µA | 33 nC @ 10 V | ±20V | 1700 pF @ 25 V | - | 27W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
Frequently Asked Questions
What are FETs, MOSFETs components used for?
FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right FETs, MOSFETs part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.
