FETs, MOSFETs
Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.
If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF830ALPBFMOSFET N-CH 500V 5A I2PAK |
3,839 |
|
Datasheet | - | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 5A (Tc) | 10V | 1.4Ohm @ 3A, 10V | 4.5V @ 250µA | 24 nC @ 10 V | ±30V | 620 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
|
SIHB12N50E-GE3MOSFET N-CH 500V 10.5A D2PAK |
2,746 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 10.5A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±30V | 886 pF @ 100 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SIHF7N60E-E3MOSFET N-CH 600V 7A TO220 |
8,214 |
|
Datasheet | - | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40 nC @ 10 V | ±30V | 680 pF @ 100 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
|
IRFBC40APBF-BE3MOSFET N-CH 600V 6.2A TO220AB |
7,524 |
|
Datasheet | - | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | - | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±30V | 1036 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRFI9Z24GPBFMOSFET P-CH 60V 8.5A TO220-3 |
4,052 |
|
Datasheet | - | TO-220-3 Full Pack, Isolated Tab | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 8.5A (Tc) | 10V | 280mOhm @ 5.1A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 570 pF @ 25 V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
|
SIHP12N60E-E3MOSFET N-CH 600V 12A TO220AB |
7,636 |
|
Datasheet | - | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
SIHP12N60E-GE3MOSFET N-CH 600V 12A TO220AB |
3,907 |
|
Datasheet | E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
SIHF12N60E-E3MOSFET N-CH 600V 12A TO220 |
7,602 |
|
Datasheet | - | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
|
SIRA10BDP-T1-GE3MOSFET N-CH 30V 30A/60A PPAK SO8 |
9,278 |
|
Datasheet | TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Ta), 60A (Tc) | 4.5V, 10V | 3.6mOhm @ 10A, 10V | 2.4V @ 250µA | 36.2 nC @ 10 V | +20V, -16V | 1710 pF @ 15 V | - | 5W (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
|
IRFBF30PBF-BE3MOSFET N-CH 900V 3.6A TO220AB |
9,100 |
|
Datasheet | - | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 3.6A (Tc) | - | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
Frequently Asked Questions
What are FETs, MOSFETs components used for?
FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right FETs, MOSFETs part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.
