JIEXIN Electronics — Your one-stop global supplier of chips and electronic components.
FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SI7463DP-T1-GE3 Vishay Siliconix

SI7463DP-T1-GE3

MOSFET P-CH 40V 11A PPAK SO-8

Vishay Siliconix

9,772
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 40 V 11A (Ta) 4.5V, 10V 9.2mOhm @ 18.6A, 10V 3V @ 250µA 140 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
IRFB9N60APBF Vishay Siliconix

IRFB9N60APBF

MOSFET N-CH 600V 9.2A TO220AB

Vishay Siliconix

5,840
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIR836DP-T1-GE3 Vishay Siliconix

SIR836DP-T1-GE3

MOSFET N-CH 40V 21A PPAK SO-8

Vishay Siliconix

8,425
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Tc) 4.5V, 10V 19mOhm @ 10A, 10V 2.5V @ 250µA 18 nC @ 10 V ±20V 600 pF @ 20 V - 3.9W (Ta), 15.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SISA72DN-T1-GE3 Vishay Siliconix

SISA72DN-T1-GE3

MOSFET N-CH 40V 60A PPAK1212-8

Vishay Siliconix

7,101
Datasheet TrenchFET® Gen IV PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 3.5mOhm @ 10A, 10V 2.4V @ 250µA 30 nC @ 4.5 V +20V, -16V 3240 pF @ 20 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
SIS488DN-T1-GE3 Vishay Siliconix

SIS488DN-T1-GE3

MOSFET N-CH 40V 40A PPAK1212-8

Vishay Siliconix

9,682
Datasheet TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V 2.2V @ 250µA 32 nC @ 10 V ±20V 1330 pF @ 20 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
SIHA5N80AE-GE3 Vishay Siliconix

SIHA5N80AE-GE3

E SERIES POWER MOSFET THIN-LEAD

Vishay Siliconix

2,322
Datasheet E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 1.35Ohm @ 1.5A, 10V 4V @ 250µA 16.5 nC @ 10 V ±30V 321 pF @ 100 V - 29W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
SI7106DN-T1-GE3 Vishay Siliconix

SI7106DN-T1-GE3

MOSFET N-CH 20V 12.5A PPAK1212-8

Vishay Siliconix

6,321
Datasheet TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 12.5A (Ta) 2.5V, 4.5V 6.2mOhm @ 19.5A, 4.5V 1.5V @ 250µA 27 nC @ 4.5 V ±12V - - 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
SIHD6N65E-GE3 Vishay Siliconix

SIHD6N65E-GE3

MOSFET N-CH 650V 7A DPAK

Vishay Siliconix

2,977
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 820 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
IRLIZ14GPBF Vishay Siliconix

IRLIZ14GPBF

MOSFET N-CH 60V 8A TO220-3

Vishay Siliconix

9,017
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 60 V 8A (Tc) 4V, 5V 200mOhm @ 4.8A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 27W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
IRFS11N50APBF Vishay Siliconix

IRFS11N50APBF

MOSFET N-CH 500V 11A D2PAK

Vishay Siliconix

3,156
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
Total 3677 Record«Prev1... 131132133134135136137138...368Next»
FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

Need Help Narrowing Down the Right FETs, MOSFETs Part?

Send your target specifications, preferred manufacturer, quantity or reference part number. Our team can help check matching options, availability and quotation details for your sourcing requirement.

BOM BOM Phone +86-138 0989 9356 Email info@jx-icsource.com Cart Shopping Cart Account My Account Back To Top