JIEXIN Electronics — Your one-stop global supplier of chips and electronic components.
FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
APT50M75JLLU2 Microchip Technology

APT50M75JLLU2

MOSFET N-CH 500V 51A SOT227

Microchip Technology

31
Datasheet POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 51A (Tc) 10V 75mOhm @ 25.5A, 10V 5V @ 1mA 123 nC @ 10 V ±30V 5590 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227
MSC015SMA070S Microchip Technology

MSC015SMA070S

SICFET N-CH 700V 126A D3PAK

Microchip Technology

20
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel SiCFET (Silicon Carbide) 700 V 126A (Tc) 20V 19mOhm @ 40A, 20V 2.4V @ 4mA (Typ) 215 nC @ 20 V +23V, -10V 4500 pF @ 700 V - 370W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
APT10M11LVRG Microchip Technology

APT10M11LVRG

MOSFET N-CH 100V 100A TO264

Microchip Technology

19
Datasheet POWER MOS V® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 11mOhm @ 50A, 10V 4V @ 2.5mA 450 nC @ 10 V ±30V 10300 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 (L)
MSC40SM120JCU2 Microchip Technology

MSC40SM120JCU2

SICFET N-CH 1.2KV 55A SOT227

Microchip Technology

12
Datasheet - SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 20V 50mOhm @ 40A, 20V 2.7V @ 1mA 137 nC @ 20 V +25V, -10V 1990 pF @ 1000 V - 245W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
MSC017SMA120B4 Microchip Technology

MSC017SMA120B4

MOSFET SIC 1200V 17 MOHM TO-247

Microchip Technology

16
Datasheet - TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 113A (Tc) 20V 22mOhm @ 40A, 20V 2.7V @ 4.5mA (Typ) 249 nC @ 20 V +22V, -10V 5280 pF @ 1000 V - 455W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
APT58M80J Microchip Technology

APT58M80J

MOSFET N-CH 800V 60A SOT227

Microchip Technology

2
Datasheet - SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 800 V 60A (Tc) 10V 110mOhm @ 43A, 10V 5V @ 5mA 570 nC @ 10 V ±30V 17550 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227
MSC70SM120JCU3 Microchip Technology

MSC70SM120JCU3

SICFET N-CH 1.2KV 89A SOT227

Microchip Technology

5
Datasheet - SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 89A (Tc) 20V 31mOhm @ 40A, 20V 2.8V @ 1mA 232 nC @ 20 V +25V, -10V 3020 pF @ 1000 V - 395W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
APT10M19BVRG Microchip Technology

APT10M19BVRG

MOSFET N-CH 100V 75A TO247

Microchip Technology

53
Datasheet POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) - 19mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 6120 pF @ 25 V - - - - - Through Hole TO-247 [B]
APT5015BVFRG Microchip Technology

APT5015BVFRG

MOSFET N-CH 500V 32A TO247

Microchip Technology

40
Datasheet POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 32A (Tc) - 150mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 5280 pF @ 25 V - - - - - Through Hole TO-247 [B]
MSC040SMA120B4N Microchip Technology

MSC040SMA120B4N

MOSFET SIC 1200 V 40 MOHM TO-247

Microchip Technology

60
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 71A (Tc) 18V, 20V 50mOhm @ 40A, 20V 5V @ 2mA 137 nC @ 20 V +23V, -10V 1962 pF @ 1000 V - 372W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
Total 621 Record«Prev1... 1011121314151617...63Next»
FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

Need Help Narrowing Down the Right FETs, MOSFETs Part?

Send your target specifications, preferred manufacturer, quantity or reference part number. Our team can help check matching options, availability and quotation details for your sourcing requirement.

BOM BOM Phone +86-138 0989 9356 Email info@jx-icsource.com Cart Shopping Cart Account My Account Back To Top