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FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
APT20M38BVRG Microchip Technology

APT20M38BVRG

MOSFET N-CH 200V 67A TO247

Microchip Technology

44
Datasheet POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 67A (Tc) 10V 38mOhm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V ±30V 6120 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
APT56F50B2 Microchip Technology

APT56F50B2

MOSFET N-CH 500V 56A T-MAX

Microchip Technology

58
Datasheet POWER MOS 8™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 500 V 56A (Tc) 10V 100mOhm @ 28A, 10V 5V @ 2.5mA 220 nC @ 10 V ±30V 8800 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
MSC080SMA120S Microchip Technology

MSC080SMA120S

SICFET N-CH 1200V 35A D3PAK

Microchip Technology

24
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 35A 20V 100mOhm @ 15A, 20V 2.8V @ 1mA 64 nC @ 20 V +23V, -10V 838 pF @ 1000 V - 182W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
APT5014BLLG Microchip Technology

APT5014BLLG

MOSFET N-CH 500V 35A TO247

Microchip Technology

41
Datasheet POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 35A (Tc) 10V 140mOhm @ 17.5A, 10V 5V @ 1mA 72 nC @ 10 V ±30V 3261 pF @ 25 V - 403W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
MSC035SMA070S Microchip Technology

MSC035SMA070S

MOSFET N-CH 700V D3PAK

Microchip Technology

68
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel SiCFET (Silicon Carbide) 700 V 65A (Tc) 20V 44mOhm @ 30A, 20V 2.7V @ 1mA 99 nC @ 20 V +23V, -10V 2010 pF @ 700 V - 206W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
APT106N60B2C6 Microchip Technology

APT106N60B2C6

MOSFET N-CH 600V 106A T-MAX

Microchip Technology

38
Datasheet CoolMOS™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 600 V 106A (Tc) 10V 35mOhm @ 53A, 10V 3.5V @ 3.4mA 308 nC @ 10 V ±20V 8390 pF @ 25 V - 833W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
APT5010LVRG Microchip Technology

APT5010LVRG

MOSFET N-CH 500V 47A TO264

Microchip Technology

19
Datasheet POWER MOS V® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 47A (Tc) - 100mOhm @ 500mA, 10V 4V @ 2.5mA 470 nC @ 10 V - 8900 pF @ 25 V - - - - - Through Hole TO-264 [L]
APT29F100B2 Microchip Technology

APT29F100B2

MOSFET N-CH 1000V 30A T-MAX

Microchip Technology

11
Datasheet POWER MOS 8™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) 10V 440mOhm @ 16A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8500 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
APT106N60LC6 Microchip Technology

APT106N60LC6

MOSFET N-CH 600V 106A TO264

Microchip Technology

38
Datasheet CoolMOS™ TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 106A (Tc) 10V 35mOhm @ 53A, 10V 3.5V @ 3.4mA 308 nC @ 10 V ±20V 8390 pF @ 25 V - 833W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 (L)
APT48M80L Microchip Technology

APT48M80L

MOSFET N-CH 800V 49A TO264

Microchip Technology

82
Datasheet - TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 49A (Tc) 10V 200mOhm @ 24A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9330 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 [L]
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

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