FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRF7324D1TR MOSFET P-CH 20V 2.2A 8SO Infineon Technologies	4,679	RFQ	Datasheet	FETKY™	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	2.2A (Ta)	2.7V, 4.5V	270mOhm @ 1.2A, 4.5V	700mV @ 250µA (Min)	7.8 nC @ 4.5 V	±12V	260 pF @ 15 V	Schottky Diode (Isolated)	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF7402TR MOSFET N-CH 20V 6.8A 8SO Infineon Technologies	8,557	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	6.8A (Ta)	2.7V, 4.5V	35mOhm @ 4.1A, 4.5V	700mV @ 250µA (Min)	22 nC @ 4.5 V	±12V	650 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF740LCL MOSFET N-CH 400V 10A I2PAK Vishay Siliconix	2,746	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	10A (Tc)	10V	550mOhm @ 6A, 10V	4V @ 250µA	39 nC @ 10 V	±30V	1100 pF @ 25 V	-	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK
IRF740LCSTRL MOSFET N-CH 400V 10A D2PAK Vishay Siliconix	2,060	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	400 V	10A (Tc)	10V	550mOhm @ 6A, 10V	4V @ 250µA	39 nC @ 10 V	±30V	1100 pF @ 25 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRF7452TR MOSFET N-CH 100V 4.5A 8SO Infineon Technologies	8,065	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	4.5A (Ta)	10V	60mOhm @ 2.7A, 10V	5.5V @ 250µA	50 nC @ 10 V	±30V	930 pF @ 25 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF7463TR MOSFET N-CH 30V 14A 8SO Infineon Technologies	8,143	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	14A (Ta)	2.7V, 10V	8mOhm @ 14A, 10V	2V @ 250µA	51 nC @ 4.5 V	±12V	3150 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF7466TR MOSFET N-CH 30V 11A 8SO Infineon Technologies	6,520	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	11A (Ta)	4.5V, 10V	12.5mOhm @ 11A, 10V	3V @ 250µA	23 nC @ 4.5 V	±20V	2100 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF7467TR MOSFET N-CH 30V 11A 8SO Infineon Technologies	6,172	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	11A (Ta)	2.8V, 10V	12mOhm @ 11A, 10V	2V @ 250µA	32 nC @ 4.5 V	±12V	2530 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF820ASTRR MOSFET N-CH 500V 2.5A D2PAK Vishay Siliconix	9,301	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	500 V	2.5A (Tc)	10V	3Ohm @ 1.5A, 10V	4.5V @ 250µA	17 nC @ 10 V	±30V	340 pF @ 25 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRF9510L MOSFET P-CH 100V 4A I2PAK Vishay Siliconix	9,991	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	4A (Tc)	10V	1.2Ohm @ 2.4A, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	200 pF @ 25 V	-	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	I2PAK
IRF9520L MOSFET P-CH 100V 6.8A I2PAK Vishay Siliconix	4,051	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	6.8A (Tc)	10V	600mOhm @ 4.1A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	390 pF @ 25 V	-	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	I2PAK
IRF9520NSTRL MOSFET P-CH 100V 6.8A D2PAK Infineon Technologies	4,285	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	100 V	6.8A (Tc)	10V	480mOhm @ 4A, 10V	4V @ 250µA	27 nC @ 10 V	±20V	350 pF @ 25 V	-	3.8W (Ta), 48W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF9530L MOSFET P-CH 100V 12A I2PAK Vishay Siliconix	7,270	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	12A (Tc)	10V	300mOhm @ 7.2A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	860 pF @ 25 V	-	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	I2PAK
IRF9540L MOSFET P-CH 100V 19A I2PAK Vishay Siliconix	5,494	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	19A (Tc)	10V	200mOhm @ 11A, 10V	4V @ 250µA	61 nC @ 10 V	±20V	1400 pF @ 25 V	-	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	I2PAK
IRF9540STRR MOSFET P-CH 100V 19A D2PAK Vishay Siliconix	3,664	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	100 V	19A (Tc)	10V	200mOhm @ 11A, 10V	4V @ 250µA	61 nC @ 10 V	±20V	1400 pF @ 25 V	-	3.7W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRF9610STRL MOSFET P-CH 200V 1.8A D2PAK Vishay Siliconix	7,837	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	200 V	1.8A (Tc)	10V	3Ohm @ 900mA, 10V	4V @ 250µA	11 nC @ 10 V	±20V	170 pF @ 25 V	-	3W (Ta), 20W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRF9610STRR MOSFET P-CH 200V 1.8A D2PAK Vishay Siliconix	2,194	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	200 V	1.8A (Tc)	10V	3Ohm @ 900mA, 10V	4V @ 250µA	11 nC @ 10 V	±20V	170 pF @ 25 V	-	3W (Ta), 20W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRF9620L MOSFET P-CH 200V 3.5A I2PAK Vishay Siliconix	9,461	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	3.5A (Tc)	10V	1.5Ohm @ 1.5A, 10V	4V @ 250µA	22 nC @ 10 V	±20V	350 pF @ 25 V	-	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK
IRF9Z24NSTRR MOSFET P-CH 55V 12A D2PAK Infineon Technologies	6,721	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	55 V	12A (Tc)	10V	175mOhm @ 7.2A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	350 pF @ 25 V	-	3.8W (Ta), 45W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF9Z34NSTRR MOSFET P-CH 55V 19A D2PAK Infineon Technologies	3,224	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	55 V	19A (Tc)	10V	100mOhm @ 10A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	620 pF @ 25 V	-	3.8W (Ta), 68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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