FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRFP450LC MOSFET N-CH 500V 14A TO247-3 Vishay Siliconix	7,572	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	14A (Tc)	10V	400mOhm @ 8.4A, 10V	4V @ 250µA	74 nC @ 10 V	±30V	2200 pF @ 25 V	-	190W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IRFP460LC MOSFET N-CH 500V 20A TO247-3 Vishay Siliconix	4,966	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	20A (Tc)	10V	270mOhm @ 12A, 10V	4V @ 250µA	120 nC @ 10 V	±30V	3600 pF @ 25 V	-	280W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IRFL4105 MOSFET N-CH 55V 3.7A SOT223 Infineon Technologies	8,116	RFQ	Datasheet	HEXFET®	TO-261-4, TO-261AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	3.7A (Ta)	10V	45mOhm @ 3.7A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	660 pF @ 25 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223
IRF5305STRR MOSFET P-CH 55V 31A D2PAK Infineon Technologies	7,682	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	55 V	31A (Tc)	10V	60mOhm @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1200 pF @ 25 V	-	3.8W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF3706S MOSFET N-CH 20V 77A D2PAK Infineon Technologies	4,061	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	77A (Tc)	2.8V, 10V	8.5mOhm @ 15A, 10V	2V @ 250µA	35 nC @ 4.5 V	±12V	2410 pF @ 10 V	-	88W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRFS17N20D MOSFET N-CH 200V 16A D2PAK Infineon Technologies	3,261	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	16A (Tc)	10V	170mOhm @ 9.8A, 10V	5.5V @ 250µA	50 nC @ 10 V	±30V	1100 pF @ 25 V	-	3.8W (Ta), 140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRFSL31N20D MOSFET N-CH 200V 31A TO262 Infineon Technologies	2,123	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	31A (Tc)	10V	82mOhm @ 18A, 10V	5.5V @ 250µA	110 nC @ 10 V	±30V	2370 pF @ 25 V	-	3.1W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRL2703S MOSFET N-CH 30V 24A D2PAK Infineon Technologies	6,832	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	24A (Tc)	4.5V, 10V	40mOhm @ 14A, 10V	1V @ 250µA	15 nC @ 4.5 V	±16V	450 pF @ 25 V	-	45W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRLR8503 MOSFET N-CH 30V 44A DPAK Infineon Technologies	9,790	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	44A (Tc)	4.5V, 10V	16mOhm @ 15A, 10V	3V @ 250µA	20 nC @ 5 V	±20V	1650 pF @ 25 V	-	62W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)
IRFU18N15D MOSFET N-CH 150V 18A IPAK Infineon Technologies	2,456	RFQ	Datasheet	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	18A (Tc)	10V	125mOhm @ 11A, 10V	5.5V @ 250µA	43 nC @ 10 V	±30V	900 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)
IRFL1006 MOSFET N-CH 60V 1.6A SOT223 Infineon Technologies	4,909	RFQ	Datasheet	HEXFET®	TO-261-4, TO-261AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	1.6A (Ta)	10V	220mOhm @ 1.6A, 10V	4V @ 250µA	8 nC @ 10 V	±20V	160 pF @ 25 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223
IRL3215 MOSFET N-CH 150V 12A TO220AB Infineon Technologies	7,180	RFQ	Datasheet	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	12A (Tc)	4V, 10V	166mOhm @ 7.2A, 10V	2V @ 250µA	35 nC @ 5 V	±16V	775 pF @ 25 V	-	80W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
IRF3706 MOSFET N-CH 20V 77A TO220AB Infineon Technologies	3,171	RFQ	Datasheet	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	77A (Tc)	2.8V, 10V	8.5mOhm @ 15A, 10V	2V @ 250µA	35 nC @ 4.5 V	±12V	2410 pF @ 10 V	-	88W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
IRF3205L MOSFET N-CH 55V 110A TO262 Infineon Technologies	8,316	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	110A (Tc)	10V	8mOhm @ 62A, 10V	4V @ 250µA	146 nC @ 10 V	±20V	3247 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRF530NL MOSFET N-CH 100V 17A TO262 Infineon Technologies	6,069	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	17A (Tc)	10V	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	920 pF @ 25 V	-	3.8W (Ta), 70W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRF730AL MOSFET N-CH 400V 5.5A I2PAK Vishay Siliconix	3,398	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	400 V	5.5A (Tc)	10V	1Ohm @ 3.3A, 10V	4.5V @ 250µA	22 nC @ 10 V	±30V	600 pF @ 25 V	-	74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK
IRFZ24NL MOSFET N-CH 55V 17A TO262 Infineon Technologies	4,781	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	17A (Tc)	10V	70mOhm @ 10A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	370 pF @ 25 V	-	3.8W (Ta), 45W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRFZ44EL MOSFET N-CH 60V 48A TO262 Infineon Technologies	3,713	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	48A (Tc)	10V	23mOhm @ 29A, 10V	4V @ 250µA	60 nC @ 10 V	±20V	1360 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRL2505L MOSFET N-CH 55V 104A TO262 Infineon Technologies	2,221	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	104A (Tc)	4V, 10V	8mOhm @ 54A, 10V	2V @ 250µA	130 nC @ 5 V	±16V	5000 pF @ 25 V	-	3.8W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRFI9634G MOSFET P-CH 250V 4.1A TO220-3 Vishay Siliconix	5,967	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	250 V	4.1A (Tc)	10V	1Ohm @ 2.5A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	680 pF @ 25 V	-	35W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.