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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
BSC0805LSATMA1 Infineon Technologies

BSC0805LSATMA1

MOSFET N-CH 100V 79A TDSON-8-6

Infineon Technologies

4,450
Datasheet OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 79A (Tc) 4.5V, 10V 7mOhm @ 40A, 10V 2.3V @ 49µA 20 nC @ 4.5 V ±20V 2700 pF @ 50 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-6
IRF3315L Infineon Technologies

IRF3315L

MOSFET N-CH 150V 21A TO262

Infineon Technologies

7,112
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 10V 82mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRF3709ZSTRRPBF Infineon Technologies

IRF3709ZSTRRPBF

MOSFET N-CH 30V 87A D2PAK

Infineon Technologies

5,985
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 87A (Tc) 4.5V, 10V 6.3mOhm @ 21A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2130 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF5210STRR Infineon Technologies

IRF5210STRR

MOSFET P-CH 100V 40A D2PAK

Infineon Technologies

5,480
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 60mOhm @ 24A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 2700 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRFB33N15D Infineon Technologies

IRFB33N15D

MOSFET N-CH 150V 33A TO220AB

Infineon Technologies

9,955
Datasheet HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 56mOhm @ 20A, 10V 5.5V @ 250µA 90 nC @ 10 V ±30V 2020 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRF7220 Infineon Technologies

IRF7220

MOSFET P-CH 14V 11A 8SO

Infineon Technologies

7,335
Datasheet HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 14 V 11A (Ta) 2.5V, 4.5V 12mOhm @ 11A, 4.5V 600mV @ 250µA (Min) 125 nC @ 5 V ±12V 8075 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7324D1 Infineon Technologies

IRF7324D1

MOSFET P-CH 20V 2.2A 8SO

Infineon Technologies

4,811
Datasheet FETKY™ 8-SOIC (0.154", 3.90mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.2A (Ta) 2.7V, 4.5V 270mOhm @ 1.2A, 4.5V 700mV @ 250µA (Min) 7.8 nC @ 4.5 V ±12V 260 pF @ 15 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7233 Infineon Technologies

IRF7233

MOSFET P-CH 12V 9.5A 8SO

Infineon Technologies

8,052
Datasheet HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 12 V 9.5A (Ta) 2.5V, 4.5V 20mOhm @ 9.5A, 4.5V 600mV @ 250µA (Min) 74 nC @ 5 V ±12V 6000 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7322D1 Infineon Technologies

IRF7322D1

MOSFET P-CH 20V 5.3A 8SO

Infineon Technologies

7,827
Datasheet FETKY™ 8-SOIC (0.154", 3.90mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.3A (Ta) 2.7V, 4.5V 62mOhm @ 2.9A, 4.5V 700mV @ 250µA (Min) 29 nC @ 4.5 V ±12V 780 pF @ 15 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRFS33N15D Infineon Technologies

IRFS33N15D

MOSFET N-CH 150V 33A D2PAK

Infineon Technologies

7,411
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 56mOhm @ 20A, 10V 5.5V @ 250µA 90 nC @ 10 V ±30V 2020 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

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