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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SPB04N60S5ATMA1 Infineon Technologies

SPB04N60S5ATMA1

MOSFET N-CH 600V 4.5A TO263-3

Infineon Technologies

9,429
Datasheet CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 5.5V @ 200µA 22.9 nC @ 10 V ±20V 580 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3-2
IRFZ44ESTRLPBF Infineon Technologies

IRFZ44ESTRLPBF

MOSFET N-CH 60V 48A D2PAK

Infineon Technologies

6,433
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 10V 23mOhm @ 29A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1360 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF1405ZL-7PPBF Infineon Technologies

IRF1405ZL-7PPBF

MOSFET N-CH 55V 120A TO263CA-7

Infineon Technologies

9,787
Datasheet HEXFET® TO-263-7 (Straight Leads) Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 4.9mOhm @ 88A, 10V 4V @ 150µA 230 nC @ 10 V ±20V 5360 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-263CA-7
IRF3205ZS Infineon Technologies

IRF3205ZS

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies

4,306
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.5mOhm @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3450 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IPD50N04S308ATMA1 Infineon Technologies

IPD50N04S308ATMA1

MOSFET N-CH 40V 50A TO252-3

Infineon Technologies

5,656
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 7.5mOhm @ 50A, 10V 4V @ 40µA 35 nC @ 10 V ±20V 2350 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IRL7833S Infineon Technologies

IRL7833S

MOSFET N-CH 30V 150A D2PAK

Infineon Technologies

9,057
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V 3.8mOhm @ 38A, 10V 2.3V @ 250µA 47 nC @ 4.5 V ±20V 4170 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
SPB21N10 Infineon Technologies

SPB21N10

MOSFET N-CH 100V 21A TO263-3

Infineon Technologies

8,805
Datasheet SIPMOS® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 21A (Tc) 10V 80mOhm @ 15A, 10V 4V @ 44µA 38.4 nC @ 10 V ±20V 865 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
IRF1405ZSTRLPBF Infineon Technologies

IRF1405ZSTRLPBF

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies

9,654
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IPP80N08S207AKSA1 Infineon Technologies

IPP80N08S207AKSA1

MOSFET N-CH 75V 80A TO220-3

Infineon Technologies

9,362
Datasheet OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 7.4mOhm @ 80A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPD200N15N3GBTMA1 Infineon Technologies

IPD200N15N3GBTMA1

MOSFET N-CH 150V 50A TO252-3

Infineon Technologies

3,967
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 150 V 50A (Tc) 8V, 10V 20mOhm @ 50A, 10V 4V @ 90µA 31 nC @ 10 V ±20V 1820 pF @ 75 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

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