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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRFH8303TRPBF Infineon Technologies

IRFH8303TRPBF

MOSFET N-CH 30V 43A/100A 8PQFN

Infineon Technologies

1,121
Datasheet HEXFET®, StrongIRFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 43A (Ta), 100A (Tc) 4.5V, 10V 1.1mOhm @ 50A, 10V 2.2V @ 150µA 179 nC @ 10 V ±20V 7736 pF @ 24 V - 3.7W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
BSZ010NE2LS5ATMA1 Infineon Technologies

BSZ010NE2LS5ATMA1

MOSFET N-CH 25V 32A/40A TSDSON

Infineon Technologies

3,523
Datasheet OptiMOS™ 5 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 32A (Ta), 40A (Tc) 4.5V, 10V 1mOhm @ 20A, 10V 2V @ 250µA 29 nC @ 4.5 V ±16V 3900 pF @ 12 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TSDSON-8-34
IRLR3636TRLPBF Infineon Technologies

IRLR3636TRLPBF

MOSFET N-CH 60V 50A DPAK

Infineon Technologies

705
Datasheet HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 6.8mOhm @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V ±16V 3779 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
BSC120N12LSGATMA1 Infineon Technologies

BSC120N12LSGATMA1

TRENCH >=100V PG-TDSON-8

Infineon Technologies

2,427
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 10A (Ta), 68A (Tc) 4.5V, 10V 12mOhm @ 34A, 10V 2.4V @ 72µA 51 nC @ 10 V ±20V 4900 pF @ 60 V - 114W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8
IPB65R660CFDAATMA1 Infineon Technologies

IPB65R660CFDAATMA1

MOSFET N-CH 650V 6A D2PAK

Infineon Technologies

4,016
Datasheet CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 660mOhm @ 3.2A, 10V 4.5V @ 200µA 20 nC @ 10 V ±20V 543 pF @ 100 V - 62.5W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3
IPB054N08N3GATMA1 Infineon Technologies

IPB054N08N3GATMA1

MOSFET N-CH 80V 80A D2PAK

Infineon Technologies

3,633
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 5.4mOhm @ 80A, 10V 3.5V @ 90µA 69 nC @ 10 V ±20V 4750 pF @ 40 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
IRF100B202 Infineon Technologies

IRF100B202

MOSFET N-CH 100V 97A TO220AB

Infineon Technologies

1,919
Datasheet HEXFET®, StrongIRFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 10V 8.6mOhm @ 58A, 10V 4V @ 150µA 116 nC @ 10 V ±20V 4476 pF @ 50 V - 221W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
BSZ014NE2LS5IFATMA1 Infineon Technologies

BSZ014NE2LS5IFATMA1

MOSFET N-CH 25V 31A/40A TSDSON

Infineon Technologies

26,690
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 31A (Ta), 40A (Tc) 4.5V, 10V 1.45mOhm @ 20A, 10V 2V @ 250µA 33 nC @ 10 V ±16V 2300 pF @ 12 V Schottky Diode (Body) 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TSDSON-8-FL
IPD60R280CFD7ATMA1 Infineon Technologies

IPD60R280CFD7ATMA1

MOSFET N-CH 600V 9A TO252-3

Infineon Technologies

4,544
Datasheet CoolMOS™ CFD7 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 280mOhm @ 3.6A, 10V 4.5V @ 180µA 18 nC @ 10 V ±20V 807 pF @ 400 V - 51W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
SPD08N50C3ATMA1 Infineon Technologies

SPD08N50C3ATMA1

MOSFET N-CH 500V 7.6A TO252-3

Infineon Technologies

12,119
Datasheet CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 7.6A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 32 nC @ 10 V ±20V 750 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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