FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
GP2T080A120U SIC MOSFET 1200V 80M TO-247-3L SemiQ	1,149	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	35A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	58 nC @ 20 V	+25V, -10V	1377 pF @ 1000 V	-	188W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
NTHL065N65S3F MOSFET N-CH 650V 46A TO247-3 onsemi	6,586	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	46A (Tc)	10V	65mOhm @ 23A, 10V	5V @ 4.6mA	98 nC @ 10 V	±30V	4075 pF @ 400 V	-	337W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
SCT2450KEHRC11 1200V, 10A, THD, SILICON-CARBIDE Rohm Semiconductor	427	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	10A (Tc)	18V	585mOhm @ 3A, 18V	4V @ 900µA	27 nC @ 18 V	+22V, -6V	463 pF @ 800 V	-	85W (Tc)	175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247N
STH12N120K5-2 MOSFET N-CH 1200V 12A H2PAK-2 STMicroelectronics	2,999	RFQ	Datasheet	MDmesh™ K5	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	12A (Tc)	10V	690mOhm @ 6A, 10V	5V @ 100µA	44.2 nC @ 10 V	±30V	1370 pF @ 100 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	H2PAK-2
IXFH180N20X3 MOSFET N-CH 200V 180A TO247 Littelfuse Inc.	542	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	180A (Tc)	10V	7.5mOhm @ 90A, 10V	4.5V @ 4mA	154 nC @ 10 V	±20V	10300 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
NTBL045N065SC1 SILICON CARBIDE (SIC) MOSFET - 3 onsemi	1,688	RFQ	Datasheet	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	73A (Tc)	15V, 18V	50mOhm @ 25A, 18V	4.3V @ 8mA	105 nC @ 18 V	+22.6V, -8V	1870 pF @ 325 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-HPSOF
IXTK150N15P MOSFET N-CH 150V 150A TO264 Littelfuse Inc.	305	RFQ	Datasheet	Polar	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	150A (Tc)	10V	13mOhm @ 500mA, 10V	5V @ 250µA	190 nC @ 10 V	±20V	5800 pF @ 25 V	-	714W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-264 (IXTK)
IPW65R029CFD7XKSA1 MOSFET N-CH 650V 69A TO247-3 Infineon Technologies	154	RFQ	Datasheet	CoolMOS™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	69A (Tc)	-	29mOhm @ 35.8A, 10V	4.5V @ 1.79mA	145 nC @ 10 V	±20V	7149 pF @ 400 V	-	305W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3
IXFH50N85X MOSFET N-CH 850V 50A TO247 Littelfuse Inc.	1,058	RFQ	Datasheet	HiPerFET™, Ultra X	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	850 V	50A (Tc)	10V	105mOhm @ 500mA, 10V	5.5V @ 4mA	152 nC @ 10 V	±30V	4480 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
IPW65R041CFDFKSA2 MOSFET N-CH 650V 68.5A TO247-3 Infineon Technologies	611	RFQ	Datasheet	CoolMOS™ CFD2	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	68.5A (Tc)	10V	41mOhm @ 33.1A, 10V	4.5V @ 3.3mA	300 nC @ 10 V	±20V	8400 pF @ 100 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3
IXFH120N25X3 MOSFET N-CH 250V 120A TO247 Littelfuse Inc.	165	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	120A (Tc)	10V	12mOhm @ 60A, 10V	4.5V @ 4mA	122 nC @ 10 V	±20V	7870 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
IXFX360N10T MOSFET N-CH 100V 360A PLUS247-3 Littelfuse Inc.	298	RFQ	Datasheet	HiPerFET™, Trench	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	360A (Tc)	10V	2.9mOhm @ 100A, 10V	5V @ 3mA	525 nC @ 10 V	±20V	33000 pF @ 25 V	-	1250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PLUS247™-3
NTBG080N120SC1 SICFET N-CH 1200V 30A D2PAK-7 onsemi	1,035	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	30A (Tc)	20V	110mOhm @ 20A, 20V	4.3V @ 5mA	56 nC @ 20 V	+25, -15V	1154 pF @ 800 V	-	179W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK-7
IXTA86N20X4 MOSFET 200V 86A N-CH ULTRA TO263 Littelfuse Inc.	597	RFQ	Datasheet	Ultra X4	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	86A (Tc)	10V	13mOhm @ 43A, 10V	4.5V @ 250µA	70 nC @ 10 V	±20V	2250 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IXTA15N50L2 MOSFET N-CH 500V 15A TO263 IXYS	134	RFQ	Datasheet	Linear L2™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	15A (Tc)	10V	480mOhm @ 7.5A, 10V	4.5V @ 250µA	123 nC @ 10 V	±20V	4080 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA
NVBG075N065SC1 SIC MOS D2PAK-7L 650V onsemi	3,116	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	37A (Tc)	15V, 18V	85mOhm @ 15A, 18V	4.3V @ 5mA	59 nC @ 18 V	-	1191 pF @ 325 V	-	139W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK-7
IXFH40N85X MOSFET N-CH 850V 40A TO247 Littelfuse Inc.	368	RFQ	Datasheet	HiPerFET™, Ultra X	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	850 V	40A (Tc)	10V	145mOhm @ 500mA, 10V	5.5V @ 4mA	98 nC @ 10 V	±30V	3700 pF @ 25 V	-	860W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
UF3C120080K3S SICFET N-CH 1200V 33A TO247-3 Qorvo	16,414	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	33A (Tc)	12V	100mOhm @ 20A, 12V	6V @ 10mA	51 nC @ 15 V	±25V	1500 pF @ 100 V	-	254.2W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
UF3C120080K4S SICFET N-CH 1200V 33A TO247-4 Qorvo	16,390	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	33A (Tc)	12V	100mOhm @ 20A, 12V	6V @ 10mA	43 nC @ 12 V	±25V	1500 pF @ 100 V	-	254.2W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
APT30M70BVRG MOSFET N-CH 300V 48A TO247 Microchip Technology	101	RFQ	Datasheet	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	48A (Tc)	10V	70mOhm @ 500mA, 10V	4V @ 1mA	225 nC @ 10 V	±30V	5870 pF @ 25 V	-	370W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.