FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
SIHG039N60E-GE3 MOSFET N-CH 600V 63A TO247AC Vishay Siliconix	500	RFQ	Datasheet	E	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	63A (Tc)	10V	39mOhm @ 32A, 10V	5V @ 250µA	126 nC @ 10 V	±30V	4369 pF @ 100 V	-	357W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
SIHG80N60EF-GE3 MOSFET N-CH 600V 80A TO247AC Vishay Siliconix	460	RFQ	Datasheet	EF	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	80A (Tc)	10V	32mOhm @ 40A, 10V	4V @ 250µA	400 nC @ 10 V	±30V	6600 pF @ 100 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IXTH10P60 MOSFET P-CH 600V 10A TO247 Littelfuse Inc.	258	RFQ	Datasheet	-	TO-247-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	600 V	10A (Tc)	10V	1Ohm @ 5A, 10V	5V @ 250µA	160 nC @ 10 V	±20V	4700 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
IXFH36N60P MOSFET N-CH 600V 36A TO247AD Littelfuse Inc.	626	RFQ	Datasheet	HiPerFET™, Polar	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	36A (Tc)	10V	190mOhm @ 18A, 10V	5V @ 4mA	102 nC @ 10 V	±30V	5800 pF @ 25 V	-	650W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
IXTT24P20 MOSFET P-CH 200V 24A TO268 Littelfuse Inc.	182	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	24A (Tc)	10V	110mOhm @ 500mA, 10V	5V @ 250µA	150 nC @ 10 V	±20V	4200 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA
SCT3120AW7TL SICFET N-CH 650V 21A TO263-7 Rohm Semiconductor	788	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	21A (Tc)	-	156mOhm @ 6.7A, 18V	5.6V @ 3.33mA	38 nC @ 18 V	+22V, -4V	460 pF @ 500 V	-	100W	175°C (TJ)	-	-	Surface Mount	TO-263-7
GP2T080A120H SIC MOSFET 1200V 80M TO-247-4L SemiQ	132	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	35A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	61 nC @ 20 V	+25V, -10V	1377 pF @ 1000 V	-	188W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
IXFH50N30Q3 MOSFET N-CH 300V 50A TO247AD Littelfuse Inc.	1,803	RFQ	Datasheet	HiPerFET™, Q3 Class	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	50A (Tc)	10V	80mOhm @ 25A, 10V	6.5V @ 4mA	65 nC @ 10 V	±20V	3160 pF @ 25 V	-	690W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
IXTT360N055T2 MOSFET N-CH 55V 360A TO268 Littelfuse Inc.	730	RFQ	Datasheet	TrenchT2™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	360A (Tc)	10V	2.4mOhm @ 100A, 10V	4V @ 250µA	330 nC @ 10 V	±20V	20000 pF @ 25 V	-	935W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-268AA
IXFH18N90P MOSFET N-CH 900V 18A TO247AD Littelfuse Inc.	840	RFQ	Datasheet	HiPerFET™, Polar	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	18A (Tc)	10V	600mOhm @ 500mA, 10V	6.5V @ 1mA	97 nC @ 10 V	±30V	5230 pF @ 25 V	-	540W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
NTH4L045N065SC1 SILICON CARBIDE MOSFET, NCHANNEL onsemi	181	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	55A (Tc)	15V, 18V	50mOhm @ 25A, 18V	4.3V @ 8mA	105 nC @ 18 V	+22V, -8V	1870 pF @ 325 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
STW72N60DM2AG MOSFET N-CH 600V 66A TO247 STMicroelectronics	528	RFQ	Datasheet	MDmesh™ DM2	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	66A (Tc)	10V	42mOhm @ 33A, 10V	5V @ 250µA	121 nC @ 10 V	±25V	5508 pF @ 100 V	-	446W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3
IXFT340N075T2 MOSFET N-CH 75V 340A TO268 Littelfuse Inc.	459	RFQ	Datasheet	HiPerFET™, TrenchT2™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75 V	340A (Tc)	10V	3.2mOhm @ 100A, 10V	4V @ 3mA	300 nC @ 10 V	±20V	19000 pF @ 25 V	-	935W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-268AA
IXFH120N20P MOSFET N-CH 200V 120A TO247AD Littelfuse Inc.	302	RFQ	Datasheet	HiPerFET™, Polar	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	120A (Tc)	10V	22mOhm @ 500mA, 10V	5V @ 4mA	152 nC @ 10 V	±20V	6000 pF @ 25 V	-	714W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
LSIC1MO120E0160 SICFET N-CH 1200V 22A TO247-3 Littelfuse Inc.	2,289	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	22A (Tc)	20V	200mOhm @ 10A, 20V	4V @ 5mA	57 nC @ 20 V	+22V, -6V	870 pF @ 800 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD
NTHL050N65S3HF MOSFET N-CH 650V 58A TO247-3 onsemi	389	RFQ	Datasheet	FRFET®, SuperFET® III	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	58A (Tc)	10V	50mOhm @ 29A, 10V	5V @ 1.7mA	125 nC @ 10 V	±30V	5017 pF @ 400 V	-	378W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
SCT3160KLHRC11 SICFET N-CH 1200V 17A TO247N Rohm Semiconductor	592	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	17A (Tc)	18V	208mOhm @ 5A, 18V	5.6V @ 2.5mA	42 nC @ 18 V	+22V, -4V	398 pF @ 800 V	-	103W	175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247N
IXFK44N50P MOSFET N-CH 500V 44A TO264AA Littelfuse Inc.	260	RFQ	Datasheet	HiPerFET™, Polar	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	44A (Tc)	10V	140mOhm @ 22A, 10V	5V @ 4mA	98 nC @ 10 V	±30V	5440 pF @ 25 V	-	658W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)
IXTP94N20X4 MOSFET 200V 94A N-CH ULTRA TO220 Littelfuse Inc.	163	RFQ	Datasheet	Ultra X4	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	94A (Tc)	10V	10.6mOhm @ 47A, 10V	4.5V @ 250µA	77 nC @ 10 V	±20V	5050 pF @ 25 V	-	360W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220
SCTW40N120G2V SILICON CARBIDE POWER MOSFET 120 STMicroelectronics	555	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	18V	100mOhm @ 20A, 18V	4.9V @ 1mA	61 nC @ 18 V	+22V, -10V	1233 pF @ 800 V	-	278W (Tc)	-55°C ~ 200°C (TJ)	-	-	Through Hole	HiP247™

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.