JIEXIN Electronics — Your one-stop global supplier of chips and electronic components.
ELECTRONIC COMPONENTS

FET, MOSFET Arrays

Explore FET, MOSFET Arrays parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
NXH007F120M3F2PTHG onsemi

NXH007F120M3F2PTHG

MOSFET 4N-CH 1200V 149A 34PIM

onsemi

6
Datasheet - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 149A (Tc) 10mOhm @ 120A, 18V 4.4V @ 60mA 407nC @ 18V 9090pF @ 800V 353W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 34-PIM (56.7x42.5)
MSCSM170HRM451AG Microchip Technology

MSCSM170HRM451AG

MOSFET 4N-CH 1700V/1200V 64A

Microchip Technology

10
Datasheet - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 64A (Tc), 89A (Tc) 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V 3.2V @ 2.5mA, 2.8V @ 3mA 178nC @ 20V, 232nC @ 20V 3300pF @ 1000V, 3020pF @ 1000V 319W (Tc), 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH008T120M3F2PTHG onsemi

NXH008T120M3F2PTHG

MOSFET 4N-CH 1200V 129A 29PIM

onsemi

18
Datasheet - Module Tray Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 129A (Tc) 11.5mOhm @ 100A, 18V 4.4V @ 60mA 454nC @ 20V 9129pF @ 800V 371W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 29-PIM (56.7x42.5)
MSCSM120HRM311AG Microchip Technology

MSCSM120HRM311AG

MOSFET 4N-CH 1200V/700V 89A

Microchip Technology

10
Datasheet - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV), 700V 89A (Tc), 124A (Tc) 31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V 2.8V @ 3mA, 2.4V @ 4mA 232nC @ 20V, 215nC @ 20V 3020pF @ 1000V, 4500pF @ 700V 395W (Tc), 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
FF6MR12W2M1HPB11BPSA1 Infineon Technologies

FF6MR12W2M1HPB11BPSA1

MOSFET 2N-CH 1200V 200A MODULE

Infineon Technologies

18
Datasheet HEXFET® Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 200A (Tj) 5.63mOhm @ 200A, 15V 5.55V @ 80mA 496nC @ 15V 14700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
FF6MR12W2M1HB11BPSA1 Infineon Technologies

FF6MR12W2M1HB11BPSA1

MOSFET 2N-CH 1200V 145A MODULE

Infineon Technologies

18
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 145A (Tj) 5.4mOhm @ 150A, 18V 5.15V @ 60mA 446nC @ 18V 13200pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
GCMX005A120B3B1P SemiQ

GCMX005A120B3B1P

MOSFET 4N-CH 1200V 383A

SemiQ

2
Datasheet - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Half Bridge) - 1200V (1.2kV) 383A (Tc) 7mOhm @ 200A, 20V 4V @ 80mA 927nC @ 20V 23500pF @ 800V 1.154kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH004P120M3F2PNG onsemi

NXH004P120M3F2PNG

MOSFET 2N-CH 1200V 338A 36PIM

onsemi

20
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 338A (Tc) 5.5mOhm @ 200A, 18V 4.4V @ 120mA 876nC @ 20V 16410pF @ 800V 1.098W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
GCMX005A120S7B1 SemiQ

GCMX005A120S7B1

MOSFET 2N-CH 1200V 348A

SemiQ

20
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 348A (Tc) 7mOhm @ 200A, 20V 4V @ 80mA 978nC @ 20V 29300pF @ 800V 1.042kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
FS13MR12W2M1HPB11BPSA1 Infineon Technologies

FS13MR12W2M1HPB11BPSA1

MOSFET

Infineon Technologies

18
Datasheet - - Tray Active - - - - - - - - - - - - - - -
CHB011M12GM4 Wolfspeed, Inc.

CHB011M12GM4

SIC, MODULE, 11M, 1200V, 48 MM,

Wolfspeed, Inc.

18
Datasheet * - Box Active - - - - - - - - - - - - - - -
CBB011M12GM4 Wolfspeed, Inc.

CBB011M12GM4

SIC, MODULE, 11M, 1200V, 48 MM,

Wolfspeed, Inc.

16
Datasheet * - Box Active - - - - - - - - - - - - - - -
CBB011M12GM4T Wolfspeed, Inc.

CBB011M12GM4T

SIC, MODULE, 11M, 1200V, 48 MM,

Wolfspeed, Inc.

8
Datasheet * - Box Active - - - - - - - - - - - - - - -
CHB011M12GM4T Wolfspeed, Inc.

CHB011M12GM4T

SIC, MODULE, 11M, 1200V, 48 MM,

Wolfspeed, Inc.

3
Datasheet * - Box Active - - - - - - - - - - - - - - -
CAB011A12GM3T Wolfspeed, Inc.

CAB011A12GM3T

MOSFET 2N-CH 1200V 141A MODULE

Wolfspeed, Inc.

5
Datasheet - Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 141A (Tj) 13.9mOhm @ 150A, 15V 3.9V @ 34mA 354nC @ 15V 11000pF @ 1000V 10mW -40°C ~ 150°C (TJ) - - Chassis Mount Module
FF4MR12W2M1HPB11BPSA1 Infineon Technologies

FF4MR12W2M1HPB11BPSA1

MOSFET 2N-CH 1200V AG-EASY2B

Infineon Technologies

17
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 170A 4mOhm @ 200A, 18V 5.15V @ 80mA 594nC @ 18V 17600pF @ 800V 20mW -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY2B
F411MR12W2M1HPB76BPSA1 Infineon Technologies

F411MR12W2M1HPB76BPSA1

MOSFET

Infineon Technologies

9
Datasheet - - Tray Active - - - - - - - - - - - - - - -
FF6MR12KM1HPHPSA1 Infineon Technologies

FF6MR12KM1HPHPSA1

MOSFET

Infineon Technologies

10
Datasheet - - Tray Active - - - - - - - - - - - - - - -
CAB004M12GM4 Wolfspeed, Inc.

CAB004M12GM4

SIC, MODULE, 4M, 1200V, 48 MM, G

Wolfspeed, Inc.

18
Datasheet * - Box Active - - - - - - - - - - - - - - -
CAB004M12GM4T Wolfspeed, Inc.

CAB004M12GM4T

SIC, MODULE, 4M, 1200V, 48 MM, G

Wolfspeed, Inc.

18
Datasheet * - Box Active - - - - - - - - - - - - - - -
Total 5737 Record«Prev1... 136137138139140141142143...287Next»
FAQ

Frequently Asked Questions

What are FET, MOSFET Arrays components used for?

FET, MOSFET Arrays components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FET, MOSFET Arrays part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FET, MOSFET Arrays parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

BOM & COMPONENT SOURCING

Need Pricing or Stock Support for FET, MOSFET Arrays?

Submit your required part numbers, manufacturers and quantities to receive stock availability, pricing, lead-time and sourcing support. Our team assists with active components, shortage parts, obsolete models and one-stop BOM procurement.

BOM BOM Phone +86-138 0989 9356 Email info@jx-icsource.com Cart Shopping Cart Account My Account Back To Top