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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
SCS306AMC7G Rohm Semiconductor

SCS306AMC7G

DIODE SIL CARB 650V 6A TO220FM

Rohm Semiconductor

5,601
Datasheet - TO-220-2 Full Pack Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C
VS-82PF120 Vishay General Semiconductor - Diodes Division

VS-82PF120

DIODE GEN PURP 120V 80A DO203AB

Vishay General Semiconductor - Diodes Division

2,448
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 120 V 80A 1.4 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
DSS60-0045B IXYS

DSS60-0045B

DIODE SCHOTTKY 45V 60A TO247AD

IXYS

9,440
Datasheet - TO-247-2 Tube Active Schottky 45 V 60A 600 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - 10 mA @ 45 V - - - Through Hole TO-247AD -55°C ~ 150°C
GE10MPS06E-TR GeneSiC Semiconductor

GE10MPS06E-TR

650V 10A TO-252-2 SIC SCHOTTKY M

GeneSiC Semiconductor

5,854
Datasheet MPS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 26A 1.35 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 5 µA @ 650 V 466pF @ 1V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
SCS306AGC16 Rohm Semiconductor

SCS306AGC16

DIODE SIL CARB 650V 6A TO220ACP

Rohm Semiconductor

6,950
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole TO-220ACFP 175°C
VS-25F10 Vishay General Semiconductor - Diodes Division

VS-25F10

DIODE GEN PURP 100V 25A DO203AA

Vishay General Semiconductor - Diodes Division

7,190
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 100 V 25A 1.3 V @ 78 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 100 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
SCS308AMC7G Rohm Semiconductor

SCS308AMC7G

DIODE SIL CARB 650V 8A TO220FM

Rohm Semiconductor

5,102
Datasheet - TO-220-2 Full Pack Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.5 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 400pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C
SCS308AGC16 Rohm Semiconductor

SCS308AGC16

DIODE SIL CARB 650V 8A TO220ACP

Rohm Semiconductor

9,940
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.5 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 400pF @ 1V, 1MHz - - Through Hole TO-220ACFP 175°C
JAN1N4247 Microchip Technology

JAN1N4247

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

14
Datasheet - A, Axial Bulk Active Standard 600 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 600 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
SCS312AMC7G Rohm Semiconductor

SCS312AMC7G

DIODE SIL CARB 650V 12A TO220FM

Rohm Semiconductor

8,395
Datasheet - TO-220-2 Full Pack Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.5 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 600pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C
SCS312AGC16 Rohm Semiconductor

SCS312AGC16

DIODE SIL CARB 650V 12A TO220ACP

Rohm Semiconductor

2,156
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.5 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 600pF @ 1V, 1MHz - - Through Hole TO-220ACFP 175°C
GD30MPS06J-TR GeneSiC Semiconductor

GD30MPS06J-TR

650V 30A TO-263-7 SIC SCHOTTKY M

GeneSiC Semiconductor

7,595
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 51A 1.8 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 5 µA @ 650 V 735pF @ 1V, 1MHz - - Surface Mount TO-263-7 -55°C ~ 175°C
SCS315AMC7G Rohm Semiconductor

SCS315AMC7G

DIODE SIL CARB 650V 15A TO220FM

Rohm Semiconductor

5,508
Datasheet - TO-220-2 Full Pack Tube Active SiC (Silicon Carbide) Schottky 650 V 15A 1.5 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 75 µA @ 650 V 750pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C
S5D10170A2 SMC Diode Solutions

S5D10170A2

DIODE SCHOTTKY SILICON CARBIDE S

SMC Diode Solutions

2,756
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 44A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 978pF @ 0V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
SCS315AGC16 Rohm Semiconductor

SCS315AGC16

DIODE SIL CARB 650V 15A TO220ACP

Rohm Semiconductor

3,256
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 15A 1.5 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 75 µA @ 650 V 750pF @ 1V, 1MHz - - Through Hole TO-220ACFP 175°C
PSC2065JJ Nexperia USA Inc.

PSC2065JJ

SIC DIODES AND FETS

Nexperia USA Inc.

6,012
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), Variant Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 20A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 650 V 680pF @ 1V, 1MHz - - Surface Mount D2PAK R2P -55°C ~ 175°C
JANTX1N5617US Microchip Technology

JANTX1N5617US

DIODE GEN PURP 400V 1A D-5A

Microchip Technology

2,292
Datasheet - SQ-MELF, A Bulk Active Standard 400 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 µA @ 400 V 35pF @ 12V, 1MHz Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
VS-1N1190 Vishay General Semiconductor - Diodes Division

VS-1N1190

DIODE GEN PURP 600V 35A DO203AB

Vishay General Semiconductor - Diodes Division

24
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 600 V 35A 1.7 V @ 110 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 600 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
JANTX1N5615US Microchip Technology

JANTX1N5615US

DIODE GEN PURP 200V 1A A SQ-MELF

Microchip Technology

7,427
Datasheet - SQ-MELF, A Bulk Active Standard 200 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns - - Military MIL-PRF-19500/429 Surface Mount A, SQ-MELF -65°C ~ 175°C
PSC2065LQ Nexperia USA Inc.

PSC2065LQ

SIC DIODES AND FETS

Nexperia USA Inc.

4,257
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 650 V 680pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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